AP10N70R [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP10N70R |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP10N70R/P-A
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Rated Test
▼ Fast Switching Performance
BVDSS
RDS(ON)
ID
650V
0.6Ω
10A
D
S
▼ Simple Drive Requirement
▼ RoHS Compliant
G
Description
G
D
AP10N70 series are specially designed as main switching devices for
TO-262(R)
TO-220(P)
S
universal 90~265VAC off-line AC/DC converter applications.Both TO-220
and TO-262 type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-220 and TO-262 package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power supplies
,DC-AC converters and high current high speed switching circuits.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
650
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
± 30
10
ID@TC=25℃
ID@TC=100℃
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
A
6.8
40
A
A
PD@TC=25℃
Total Power Dissipation
174
1.39
50
W
Linear Derating Factor
Single Pulse Avalanche Energy2
W/℃
mJ
A
EAS
IAR
Avalanche Current
10
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Value
Unit
℃/W
℃/W
Rthj-c
Max.
Max.
0.72
62
Rthj-a
Data & specifications subject to change without notice
200519062-1/4
AP10N70R/P-A
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
VGS=0V, ID=1.0mA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
650
-
-
-
-
0.6
4
V
Ω
V
VGS=10V, ID=5.0A
VDS=VGS, ID=250uA
-
2
gfs
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
VDS=10V, ID=5A
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
VDS=600V, VGS=0V
VDS=480V, VGS=0V
10
100
±100
IGSS
VGS
=
± 30V
Qg
ID=10A
35.9 57
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
VDS=480V
VGS=10V
VDD=300V
ID=10A
8.3
-
-
-
-
-
-
11.5
14.9
19.7
51.7
23.3
td(off)
tf
Turn-off Delay Time
RG=10Ω,VGS=10V
RD=30Ω
Fall Time
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
1950 3120
Output Capacitance
VDS=15V
f=1.0MHz
f=1.0MHz
630
20
2
-
-
Reverse Transfer Capacitance
Gate Resistance
3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage3
Reverse Recovery Time2
Tj=25℃, IS=10A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.5
V
640
7460
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=1.0mH , RG=25Ω , IAS=10A.
3.Pulse width <300us , duty cycle <2%.
2/4
AP10N70P/R-A
20
16
12
8
16
12
8
10V
6.0V
5.0V
T C =25 o
C
T C =150 o
C
10V
6.0V
5.0V
4.5V
V
G = 4.0V
4
4.5V
4
V
G =4.0V
0
0
0
10
20
30
40
0
5
10
15
20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
2
1
0
1.2
1.1
1
I D =5A
V
G =10V
0.9
0.8
25
50
75
100
125
150
25
50
75
100
125
150
T j , Junction Temperature ( o C )
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.5
T j = 150 o
C
T j = 25 o
C
1
0.5
0
1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
25
50
75
100
125
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP10N70P/R-A
f=1.0MHz
C iss
10000
100
1
16
I D =10A
V
V
V
DS =320V
DS =400V
DS =480V
12
C oss
8
4
C rss
0
0
20
40
60
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
1
1
Duty factor=0.5
0.2
0.1
100us
1ms
0.1
0.05
PDM
10ms
t
0.02
T c =25 o
Single Pulse
C
T
100ms
0.01
Duty factor = t/T
1S
Peak Tj = PDM x Rthjc + TC
Single Pulse
DC
0.01
0.1
0.00001
0.0001
0.001
0.01
0.1
1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGD
QGS
10%
VGS
t
td(on) tr
d(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
相关型号：
AP10N70R-A
TRANSISTOR 10 A, 650 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN, FET General Purpose Power
A-POWER
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