AP10N70R-A [A-POWER]

TRANSISTOR 10 A, 650 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN, FET General Purpose Power;


型号：	AP10N70R-A
厂家：	ADVANCED POWER ELECTRONICS CORP.
描述：	TRANSISTOR 10 A, 650 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN, FET General Purpose Power 开关脉冲晶体管
文件：	总4页 (文件大小：99K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AP10N70R/P-A

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% Avalanche Test

BV_DSS

R_DS(ON)

I_D

650V

0.62Ω

10A

▼ Fast Switching Characteristic

▼ Simple Drive Requirement

Description

AP10N70 series are specially designed as main switching devices for

TO-262(R)

TO-220(P)

universal 90~265VAC off-line AC/DC converter applications. Both TO-220

and TO-262 type provide high blocking voltage to overcome voltage surge

and sag in the toughest power system with the best combination of fast

switching, ruggedized design and cost-effectiveness.

The TO-220 and TO-262 package is widely preferred for commercial-

industrial applications. The device is suited for switch mode power supplies,

DC-AC converters and high current high speed switching circuits.

Absolute Maximum Ratings

Symbol

Parameter

Rating

650

+30

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

6.8

P_D@T_C=25℃

Total Power Dissipation

174

1.39

Linear Derating Factor

Single Pulse Avalanche Energy²

W/℃

E_AS

I_AR

Avalanche Current

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

℃

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

0.72

Rthj-a

Data & specifications subject to change without notice

200811035

AP10N70R/P-A

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol

BV_DSS

R_DS(ON)

V_GS(th)

Parameter

Test Conditions

Min. Typ. Max. Units

Drain-Source Breakdown Voltage

Static Drain-Source On-Resistance³V_GS=10V, I_D=5.0A

V_GS=0V, I_D=1.0mA

650

0.62

Gate Threshold Voltage

V_DS=V_GS, I_D=250uA

g_fs

Forward Transconductance

V_DS=10V, I_D=5A

I_DSS

Drain-Source Leakage Current

Drain-Source Leakage Current (T_j=150^oC) V_DS=480V_,V_GS=0V

Ω

V_DS=600V, V_GS=0V

100

I_GSS

Gate-Source Leakage

Total Gate Charge³

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time³

Rise Time

V_GS= + 30V

I_D=10A

+100

Q_g

8.3

11.5

Q_gs

Q_gd

t_d(on)

t_r

V_DS=480V

V_GS=10V

V_DD=300V

I_D=10A

t_d(off)

t_f

Turn-off Delay Time

Fall Time

R_G=10Ω,V_GS=10V

R_D=30Ω

C_iss

C_oss

C_rss

R_g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_GS=0V

1950 3120

V_DS=15V

630

f=1.0MHz

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

V_SD

t_rr

Forward On Voltage³

Reverse Recovery Time³

I_S=10A, V_GS=0V

I_S=10A, V_GS=0V,

dI/dt=100A/µs

1.5

575

10.6

Q_rr

Reverse Recovery Charge

Notes:

1.Pulse width limited by Max. junction temperature.

2.Starting T_j=25^oC , V_DD=50V , L=1.0mH , R_G=25Ω , I_AS=10A.

3.Pulse test

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

AP10N70P/R-A

T _C=25 ^oC

10V

6.0V

5.0V

T _C=150 ^oC

10V

6.0V

5.0V

4.5V

_G= 4.0V

4.5V

_G=4.0V

V _DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1.2

1.1

I _D=5A

_G=10V

0.9

0.8

100

125

150

-50

100

150

T _j, Junction Temperature ( ^oC )

T _j, Junction Temperature ( ^oC)

Fig 3. Normalized BV_DSSv.s. Junction

Temperature

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

1.5

T _j= 150 ^o

T _j= 25 ^o

0.5

0.1

0.2

0.4

0.6

0.8

1.2

-50

100

150

T _j, Junction Temperature ( ^oC)

V _SD, Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

AP10N70P/R-A

f=1.0MHz

4000

3000

2000

1000

I _D=10A

V _DS=320V

_DS=400V

_DS=480V

C _iss

C _oss

C _rss

V _DS, Drain-to-Source Voltage (V)

Q _G, Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

100

Duty factor=0.5

0.2

0.1

100us

1ms

0.1

0.05

P_DM

10ms

0.02

T _c=25 ^oC

100ms

0.01

Single Pulse

Duty factor = t/T

Peak T_j= P_DMx R_thjc+ T_C

Single Pulse

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

100

1000

V _DS, Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

V_G

V_DS

90%

Q_G

10V

Q_GD

Q_GS

10%

V_GS

t_d(on)t_r

_d(off)t_f

Charge

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

AP10N70R-A [A-POWER]

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