2SC5851C [ETC]
BJT ; BJT\n
| 型号： | 2SC5851C |
| 厂家： | 
ETC |
| 描述： | BJT
|
| 文件： | 总8页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5851
Silicon NPN Epitaxial
ADE-208-1480 (Z)
Rev.0
Feb. 2002
Features
•
High frequency amplifier
Outline
CMPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC5851
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
30
30
V
5
V
100
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
PC*
150
Tj
150
Tstg
−55 to +125
*Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
30
5
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
V
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Emitter to base breakdown
voltage
V(BR)EBO
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
ICBO
35
0.5
0.5
200
1.1
µA
µA
V
V
CB = 20 V, IE = 0
EB = 2 V, IC = 0
IEBO
hFE*1
V
VCE = 12 V, IC = 2 mA
IC = 10 mA, IB = 1 mA
Collector to emitter saturation VCE(sat)
voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Noise figure
VBE
fT
0.75
V
V
V
V
CE = 12 V, IC = 2 mA
230
1.6
5.5
MHz
pF
dB
CE = 12 V, IC = 2 mA
Cob
NF
CB = 10 V, IE = 0, f = 1 MHz
VCE = 6 V, IC = 1 mA,
f = 100 MHz, Rg = 100 Ω
Notes: 1. The 2SC5851 is grouped by hFE as follows.
Grade
Mark
hFE
A
B
C
FA
FB
FC
100 to 200
35 to 75
60 to 120
Rev.0, Feb. 2002, page 2 of 8
2SC5851
Maximum Collector Dissipation Curve
Typical Output Characteristics
10
8
150
100
6
4
50
0
2
*Value on the glass epoxy board
(10 mm x 10 mm x 0.7 mm)
Pulse test
8
I
= 0
16
B
0
4
12
20
(V)
50
100
150
Collector to Emitter Voltage
V
CE
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
100
80
10
8
V
= 6 V
CE
60
40
6
4
2
20
0
V
= 6 V
CE
0
0.2
0.4
0.6
0.8
BE
1.0
0.1
0.3
1.0
3
10
(mA)
30
Base to Emitter Voltage V
(V)
Collector Current
I
C
Rev.0, Feb. 2002, page 3 of 8
2SC5851
Noise Figure vs. Collector Current
= 6 V
Rg = 500 Ω
f = 1.0 MHz
Noise Figure vs. Collector Current
= 6 V
Rg = 50 Ω
f = 100 MHz
5
4
3
2
1
24
20
16
V
CE
V
CE
12
8
4
0
0
0.2
0.5
1.0
2
5
10
0.1 0.2
0.5 1.0
2
5
10
Collector Current
I
C
(mA)
Collector Current
I
C
(mA)
Noise Figure vs.
Signal Source Resistance
Gain Bandwidth Product vs.
Collector Current
500
400
300
200
12
V
= 6 V
CE
= 1 mA
V
CE
= 6 V
I
C
10
8
f = 100 MHz
6
4
100
0
2
0
10 20
50 100 200
500 1000
0.1
0.3
1.0
3
10
(mA)
30
Collector Current
I
C
Signal Source Resistance Rg (Ω)
Rev.0, Feb. 2002, page 4 of 8
2SC5851
Gain Bandwidth Product vs.
Collector to Emitter Voltage
Input/Output Admittance vs.
Collector to Emitter Voltage
400
300
500
I
= 1 mA
I
C
= 1 mA
C
g
oe
f = 100 MHz
b
oe
200
100
g
ie
b
b
ie
ie
200
b
oe
g
g
oe
50
ie
100
0
20
10
1
2
5
10
20
V
50
(V)
1
2
5
20
20
(V)
Collector to Emitter Voltage
Collector to Emitter Voltage
V
CE
CE
Transfer Admittance vs.
Collector to Emitter Voltage
Input/Output Admittance vs.
Collector Current
500
500
V
= 6 V
f = 100 MHz
I = 1 mA
C
f = 100 MHz
CE
g
oe
g
ie
b
b
ie
200
100
50
200
100
50
b
re
g
fe
b
g
fe
fe
b
oe
oe
b
fe
b
b
re
ie
g
ie
20
10
20
10
g
oe
1
2
5
10
20
50
(V)
0.1 0.2
0.5
1.0
2
5
Collector Current
I
C
(mA)
Collector to Emitter Voltage V
CE
Rev.0, Feb. 2002, page 5 of 8
2SC5851
Transfer Admittance vs.
Collector Current
500
V
= 6 V
CE
b
fe
f = 100 MHz
200
100
50
g
fe
b
re
b
re
g
fe
20
10
b
fe
0.1
0.2
0.5
1.0
2
5
Collector Current
I
C
(mA)
Rev.0, Feb. 2002, page 6 of 8
2SC5851
Package Dimensions
As of July, 2001
Unit: mm
2.0 0.2
+ 0.1
+ 0.1
0.16
0.3
0.3
– 0.06
– 0.05
0 – 0.1
+ 0.1
– 0.05
+ 0.1
– 0.05
0.3
0.65
0.65
1.3 0.2
Hitachi Code
JEDEC
CMPAK
—
JEITA
Mass (reference value)
Conforms
0.006 g
Rev.0, Feb. 2002, page 7 of 8
2SC5851
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
http://www.hitachisemiconductor.com/
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe Ltd.
Hitachi Asia Ltd.
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower
Electronic Components Group
Hitachi Tower
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Tel : <65>-538-6533/538-8577
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Fax: <44> (1628) 585200
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(Taipei Branch Office)
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Tel : <886>-(2)-2718-3666
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Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
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Electronic Components Group
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D-85622 Feldkirchen
Postfach 201, D-85619 Feldkirchen
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.0, Feb. 2002, page 8 of 8
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