2SC5576 [ETC]
;
ETC 
2SC5576
Transisitors
Medium Power Transistor
(Motor or Relay drive) (60 10V, 4A)
2SC5576
!Features
!Circuit diagram
1) Built-in zener diode between collector and base.
2) Strong protection against reverse power surges due to
"L" loads.
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
C
B
R1
R2
E
B : Base
C : Collector
E : Emitter
R
R
1
2
4.5kΩ
300Ω
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
VCBO
VCEO
VEBO
60±10
60±10
V
V
6
V
4
A(DC)
A(Pulse)
W
Collector current
I
C
6
*
2
30
Collector power dissipation
P
C
W(Tc=25˚C)
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
-55~+150
Single pulse, Pw=100ms
*
!Packaging specifications and hFE
Type
2SC5576
TO-220FN
2k∼20k
-
Package
hFE
Code
Basic ordering unit
(pieces)
500
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
BVCBO
BVCEO
50
50
60
60
-
70
70
V
V
I
I
C
=50µA
=5mA
CB=40V
EB=5V
C
I
CBO
EBO
CE(sat)
-
10
µA
mA
V
V
V
Emitter cutoff current
I
-
-
3
Collector-emitter saturation voltage
V
-
1
1.5
I
C/I
B
=1.5A/6mA
=5V/1.5A
CE=5V , I =-0.2A , f=30MHz
CB=10V , I =0A , f=1MHz
=1.5A , R =14Ω
B1=-IB2=6mA
20V
1
*
h
FE
2000
-
10000
V
V
V
CE/I
C
1
*
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
f
T
-
-
-
-
-
80
30
0.4
1.5
0.4
-
-
-
-
-
MHz
pF
E
2
*
Cob
E
t
on
µs
µs
µs
I
I
C
L
Storage time
t
stg
VCC
t
f
Fall time
2 Transition frequency of the device.
*
1 Measured using pulse current.
*
相关型号：
2SC5585E3 (新产品)
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