2SC5585 [TYSEMI]

Hig current. Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA; HIG电流。低VCE （SAT）： VCE （ sat）的250mV的在IC = 200毫安/ IB = 10毫安


型号：	2SC5585
厂家：	TY Semiconductor Co., Ltd
描述：	Hig current. Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA HIG电流。低VCE （SAT）： VCE （ sat）的250mV的在IC = 200毫安/ IB = 10毫安
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Product specification

2SC5585

SOT-523

+0.1

-0.1

Unit: mm

1.6

1.0

+0.1

-0.1

+0.05

0.2

-0.05

+0.01

0.1

-0.01

Features

Hig current.

Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA

+0.25

0.3

-0.05

+0.1

0.5

-0.1

1. Base

2. Emitter

3. Collecter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector current

500

Collector power dissipation

Junction temperature

150

Storage temperature range

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

VCBO

VCEO

VEBO

ICBO

IEBO

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collectoe-emitter brakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

IC = 10

IC = 1mA

IE = 10

VCB=15 V

VEB= 6 V

100

680

250

Emitter cut-off current

DC current gain

hFE

VCE= 2 V, IC = 10mA

270

Collector emitter saturation voltage

Collector output capacitance

Transition frequency

VCE(sat)

cob

IC=200mA,IB=10mA

7.5

320

VCB=10V,IE=0,f=1MHz

VCE = 2V, IE =-10mA,f=100MHz

MHz

Marking

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

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2SC5585E3 (新产品)

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