2SC5585 [SECOS]
NPN Silicon General Purpose Transistor; NPN硅通用晶体管
| 型号： | 2SC5585 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Silicon General Purpose Transistor |
| 文件： | 总2页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5585
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
RoHS Compliant Product
FEATURES
High Current
Low VCE(sat) - VCE(sat) 250mV at IC = 200mA/IB=10mA
SOT-523
Dim
A
Min
1.50
0.78
0.80
0.28
0.90
0.00
0.10
0.35
0.49
1.50
Max
İ
1.70
B
A
0.82
0.82
C
L
MARKING CODE
BX
D
0.32
1.10
0.10
0.20
0.41
0.51
1.70
3
G
H
S
B
Top View
2
1
J
D
K
G
3. Collector
L
J
2. Base
C
S
1. Emitter
All Dimension in mm
K
H
Maximum Ratings (Ta=25 o C unless otherwise specified)
Parameter
Collector-base voltage
Symbol
Value
15
Unit
V
VCBO
VCEO
VEBO
12
V
Collector-emitter voltage
Emitter-base voltage
6
V
I
C
0.5
A
Collector current (continuous)
Collector power dissipation
Junction temperature
P
C
0.15
W
oC
oC
Tj
-55~+150
-55~+150
Storage temperature
Tstg
Electrical Characteristics (Tamb=25 o C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
V
Conditions
BVCBO
BVCEO
BVEBO
15
12
6
I
I
I
C
=10 μA, I
=1mA, I =0
=10 μA, I =0
CB=15V, I =0
EB= 6V, I =0
=10mA
=200mA, I =10mA
CE=2V, I =10mA, f=100MHz
CB=10V, I =0, f=1MHz
E
=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
V
C
B
V
E
C
I
CBO
EBO
FE
CE(sat)
0.1
0.1
μA
μA
V
E
I
Emitter cutoff current
V
V
C
h
270
680
0.25
CE=2V, I
C
DC current gain
V
V
I
C
B
Collector-emitter saturation voltage
Transition frequency
fT
320
MHz
pF
V
V
C
Cob
7.5
E
Collector Output capacitance
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
2SC5585
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
ꢀꢀꢁꢂꢃꢄꢅꢆꢃꢇꢁꢈCꢉꢇꢅꢇꢃꢄꢂꢅꢆꢊꢄꢆꢃꢈCꢋꢅꢌꢂꢊ
Any changing of specification will not be informed individual
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Page 2 of 2
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