2SC5580 [PANASONIC]
Silicon NPN epitaxial planer type(For high-frequency oscillation / switching); NPN硅外延平面型（适用于高频振荡/切换）
| 型号： | 2SC5580 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planer type(For high-frequency oscillation / switching) |
| 文件： | 总1页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors
2SC5580
Silicon NPN epitaxial planer type
Unit: mm
For high-frequency oscillation / switching
+±.1±
+±.1
–±.±
±.15
±.3
–±.±5
3
I Features
• High transition frequency fT
• S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1
2
(±.65) (±.65)
1.3±±.1
2.±±±.2
1±°
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
15
8
V
1: Base
3
50
V
2: Emitter
3: Collector
EIAJ: SC-70
S-Mini Type Package
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
PC
150
Marking Symbol: 3R
Tj
150
Tstg
−55 to +150
I Electrical Characteristics Ta = 25°C 3°C
Parameter
Emitter cutoff current
Symbol
IEBO
Conditions
Min
Typ
Max
Unit
µA
V
VEB = 2 V, IC = 0
2
Collector to base voltage
Forward current transfer ratio
hFE ratio
VCBO
hFE
IC = 100 µA, IE = 0
15
100
0.6
VCE = 4 V, IC = 2 mA
350
1.5
0.5
hFE(RATIO)
VCE(sat)
fT
VCE = 4 V, IC = 100 µA/2 mA
IC = 20 mA, IB = 4 mA
dB
V
Collector to emitter saturation voltage
Transition frequency
VCE = 5 V, IC = 15 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
0.6
1.1
1.2
GHz
pF
Collector output capacitance
Cob
1.6
1
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