2SC5583 [PANASONIC]
Silicon NPN triple diffusion mesa type(For horizontal deflection output); 硅NPN三重扩散台面型（水平偏转输出）
| 型号： | 2SC5583 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion mesa type(For horizontal deflection output) |
| 文件： | 总1页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SC5583
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.0 0.5
5.0 0.3
(3.0)
φ 3.3 0.2
I Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
(1.5)
• Wide area of safe operation (ASO)
(1.5)
2.0 0.3
2.7 0.3
3.0 0.3
1.0 0.2
I Absolute Maximum Ratings TC = 25°C
0.6 0.2
5.45 0.3
Parameter
Symbol
VCBO
VCES
VCEO
VEBO
ICP
Rating
Unit
V
10.9 0.5
Collector to base voltage
Collector to emitter voltage
1 500
1 500
V
1: Base
2: Collector
3: Emitter
1
2
3
600
V
Emitter to base voltage
Peak collector current
Collector current
Base current
7
V
TOP-3L Package
30
A
Marking Symbol: C5583
Internal Connection
IC
17
A
IB
8
A
TC = 25°C
Ta = 25°C
PC
150
W
Collector power
dissipation
C
3
Junction temperature
Storage temperature
Tj
150
°C
°C
B
Tstg
−55 to +150
E
I Electrical Characteristics TC = 25°C 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
50
1
Unit
µA
Collector cutoff current
ICBO
VCB = 1 000 V, IE = 0
VCB = 1 500 V, IE = 0
mA
µA
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
IEBO
hFE
VEB = 7 V, IC = 0
50
12
3
VCE = 5 V, IC = 8.5 A
6
VCE(sat)
VBE(sat)
fT
IC = 8.5 A, IB = 2.13 A
IC = 8.5 A, IB = 2.13 A
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
IC = 8.5 A, Resistance loaded
IB1 = 2.13 A, IB2 = −4.25 A
V
V
1.5
3
MHz
µs
Storage time
tstg
2.7
0.2
Fall time
tf
µs
1
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