ZXMS6004DT8TA [DIODES]
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET; 60V N沟道自保护增强模式MOSFET IntelliFET⑩
| 型号： | ZXMS6004DT8TA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET |
| 文件： | 总9页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
ZXMS6004DT8
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET™ MOSFET
SUMMARY
Continuous drain source voltage 60 V
On-state resistance
500 mΩ
Nominal load current (VIN = 5V) 1.2 A
Clamping Energy
DESCRIPTION
210 mJ
SM8 Package
The ZXMS6004DT8 is a dual self protected low side MOSFET
with logic level input. It integrates over-temperature, over-
current, over-voltage (active clamp) and ESD protected logic level
functionality independently per channel. The ZXMS6004DT8 is
ideal as a general purpose switch driven from 3.3V or 5V
microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
FEATURES
•
•
•
•
•
•
•
•
•
Compact dual package
Low input current
Logic Level Input (3.3V and 5V)
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input Protection (ESD)
High continuous current rating
ORDERING INFORMATION
DEVICE
PART
MARK
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY PER
REEL
ZXMS6004DT8TA
ZXMS
6004D
7
12 embossed
1,000 units
1 of 9
www.diodes.com
June 2010
© Diodes Incorporated
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
A Product Line of
Diodes Incorporated
FUNCTIONAL BLOCK DIAGRAM
D1/2
Over Voltage
Protection
dV/dt
limitation
IN1/2
Over temperature
protection
Human
body ESD
protection
Logic
Over current
protection
S1/2
APPLICATIONS AND INFORMATION
•
•
•
•
•
•
•
Two completely isolated independent channels
Especially suited for loads with a high in-rush current such as lamps and motors.
All types of resistive, inductive and capacitive loads in switching applications.
μC compatible power switch for 12V and 24V DC applications.
Automotive rated.
Replaces electromechanical relays and discrete circuits.
Linear Mode capability - the current-limiting protection circuitry is designed to de-activate
at low VDS to minimise on state power dissipation. The maximum DC operating current is
therefore determined by the thermal capability of the package/board combination, rather
than by the protection circuitry. This does not compromise the product’s ability to self-
protect at low VDS.
2 of 9
www.diodes.com
June 2010
© Diodes Incorporated
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
60
UNIT
V
Continuous Drain-Source Voltage
Drain-Source Voltage for short circuit protection
VDS
VDS(SC)
VIN
36
V
Continuous Input Voltage
Continuous Input Current
-0.2V≤VIN≤6V
-0.5 ... +6
V
IIN
mA
No limit
│IIN │≤2
VIN<-0.2V or VIN>6V
Operating Temperature Range
Tj,
-40 to +150
°C
Storage Temperature Range
Tstg
PD
-55 to +150
°C
1.16
9.28
W
Power Dissipation at TA =25°C (a)(d)
Linear Derating Factor
mW/°C
PD
PD
1.67
13.3
W
Power Dissipation at TA =25°C (a)(e)
Linear Derating Factor
mW/°C
2.13
17
W
Power Dissipation at TA =25°C (b)(d)
Linear Derating Factor
mW/°C
Pulsed Drain Current @ VIN=3.3V (c)
Pulsed Drain Current @ VIN=5V (c)
IDM
IDM
IS
2
2.5
1
A
A
Continuous Source Current (Body Diode) (a)
Pulsed Source Current (Body Diode) (c)
A
ISM
EAS
5
A
210
mJ
Unclamped single pulse inductive energy, Tj=25°C,
ID=0.5A, VDD=24V
Electrostatic Discharge (Human Body Model)
Charged Device Model
VESD
VCDM
4000
1000
V
V
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
Junction to Ambient (a)(e)
Junction to Ambient (b)(d)
Junction to Case (f)
RθJA
RθJA
RθJA
RθJC
108
75
°C/W
°C/W
°C/W
°C/W
58.7
26.5
NOTES
(a) For a dual device surface mounted on a 25mm x 25mm FR4 PCB single sided 1oz weight copper split
down the middle on 1.6mm FR4 board, in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ≤ 10sec
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs – pulse width limited by junction
temperature. Refer to transient Thermal Impedance Graph.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
(f) Thermal resistance from junction to solder-point (at the end of the drain lead)
3 of 9
www.diodes.com
June 2010
© Diodes Incorporated
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
A Product Line of
Diodes Incorporated
RECOMMENDED OPERATING CONDITIONS
The ZXMS6004DT8 is optimised for use with µC operating from 3.3V and 5V supplies.
Symbol Description
Min
0
-40
3
0
0
Max
5.5
125
5.5
0.7
36
Units
V
°C
V
V
V
VIN
TA
Input voltage range
Ambient temperature range
VIH
VIL
VP
High level input voltage for MOSFET to be on
Low level input voltage for MOSFET to be off
Peripheral supply voltage (voltage to which load is referred)
CHARACTERISTICS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Limited by Over-Current Protection
Limited
by RDS(on)
2 active die
1
100m
10m
DC
1s
100ms
10ms
1ms
1 active die
Single Pulse
Tamb=25°C
Limit of s/c protection
10
See Note (a)(d)
1
0
25
50
75
100
125
150
VDS Drain-Source Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
120
100
80
60
40
20
0
Tamb=25°C
Single Pulse
Tamb=25°C
See Note (a)(d)
100
10
1
See Note (a)(d)
D=0.5
Single Pulse
D=0.05
D=0.1
D=0.2
100µ 1m 10m 100m
1
10
100
1k
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
4 of 9
www.diodes.com
June 2010
© Diodes Incorporated
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
CONDITIONS
Static Characteristics
Drain-Source Clamp Voltage
Off state Drain Current
Off state Drain Current
Input Threshold Voltage
Input Current
VDS(AZ)
IDSS
IDSS
VIN(th)
IIN
60
65
70
V
ID=10mA
500
1
nA
uA
V
VDS=12V, VIN=0V
VDS=36V, VIN=0V
VDS=VGS, ID=1mA
VIN=+3V
0.7
1
1.5
100
200
220
60
120
μA
μA
μA
Input Current
IIN
VIN=+5V
Input Current while over
temperature active
VIN=+5V
Static Drain-Source On-State
Resistance
RDS(on)
400
350
600
500
VIN=+3V, ID=0.5A
VIN=+5V, ID=0.5A
mΩ
mΩ
Static Drain-Source On-State
Resistance
RDS(on)
Continuous Drain Current (a)(e)
Continuous Drain Current (a)(e)
Continuous Drain Current (a)(d)
Continuous Drain Current (a)(d)
Current Limit (g)
ID
0.9
1.0
1.1
1.2
0.7
1
A
A
A
A
A
A
VIN=3V; TA=25°C
VIN=5V; TA=25°C
VIN=3V; TA=25°C
VIN=5V; TA=25°C
VIN=+3V,
ID
ID
ID
ID(LIM)
ID(LIM)
1.7
2.2
Current Limit (g)
VIN=+5V
Dynamic Characteristics
Turn On Delay Time
Rise time
td(on)
tr
td(off)
ff
5
VDD=12V, ID=0.5A,
VGS=5V
μs
μs
μs
μs
10
45
15
Turn Off Delay Time
Fall Time
Notes:
(g) The drain current is restricted only when the device is in saturation (see graph ‘typical output
characteristic’). This allows the device to be used in the fully on state without interference from
the current limit. The device is fully protected at all drain currents, as the low power dissipation
generated outside saturation makes current limit unnecessary.
5 of 9
www.diodes.com
June 2010
© Diodes Incorporated
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
A Product Line of
Diodes Incorporated
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
CONDITIONS
Over-temperature Protection
Thermal Overload Trip
Temperature (h)
TJT
150
175
10
°C
°C
Thermal hysteresis (h)
Note:
(h) Over-temperature protection is designed to prevent device destruction under fault conditions.
Fault conditions are considered as “outside” normal operating range, so this part is not designed
to withstand over-temperature for extended periods..
6 of 9
www.diodes.com
June 2010
© Diodes Incorporated
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
A Product Line of
Diodes Incorporated
TYPICAL CHARACTERISTICS
120
100
80
60
40
20
0
TA = 25°C
3
2
1
0
VIN
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0V
0
1
2
3
4
5
6
7
8
9
10 11 12
0
1
2
3
4
5
VIN Input Voltage (V)
Input Current vs Input Voltage
VDS Drain-Source Voltage (V)
Typical Output Characteristic
1.4
1.4
ID = 0.5A
VIN = VDS
ID = 1mA
1.3
1.2
1.1
1.0
0.9
0.8
1.2
1.0
0.8
0.6
0.4
0.2
0.0
TJ = 150°C
TJ = 25°C
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-75 -50 -25
0
25 50 75 100 125 150
TJ Junction Temperature (°C)
VIN Input Voltage (V)
On-Resistance vs Input Voltage
Threshold Voltage vs Temperature
0.9
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
TJ=150°C
1
VIN = 3V
TJ=25°C
0.1
VIN = 5V
0.01
-75 -50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
Reverse Diode Characteristic
TJ Junction Temperature (°C)
On-Resistance vs Temperature
7 of 9
www.diodes.com
June 2010
© Diodes Incorporated
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
A Product Line of
Diodes Incorporated
12
10
8
12
10
8
ID=500mA
VDS
ID=500mA
VDS
6
6
VIN
4
4
VIN
2
2
0
-50
0
-50
0
50
100 150 200 250 300
0
50
100 150 200 250 300
Time (μs)
Time (μs)
Switching Speed
Switching Speed
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VIN = 5V
VDS = 15V
RD = 0Ω
0
20
40
Time (ms)
Typical Short Circuit Protection
8 of 9
www.diodes.com
June 2010
© Diodes Incorporated
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
A Product Line of
Diodes Incorporated
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS
DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS
FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or
other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume
any liability arising out of the application or use of this document or any product described herein; neither does Diodes
Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this
document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes
Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all
damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through
unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers
shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product
names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems
without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use
provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support
devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related
requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices
or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes
Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages
arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
9 of 9
www.diodes.com
June 2010
© Diodes Incorporated
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
相关型号：
©2020 ICPDF网 联系我们和版权申明