ZXMS6005DG [DIODES]
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET; 60V N沟道自保护增强模式MOSFET IntelliFET⑩型号: | ZXMS6005DG |
厂家: | DIODES INCORPORATED |
描述: | 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET |
文件: | 总9页 (文件大小:555K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
ZXMS6005DG
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET™ MOSFET
SUMMARY
Continuous drain source voltage 60 V
On-state resistance
200 mΩ
Nominal load current (VIN = 5V) 2 A
SOT223 Package
Clamping Energy
DESCRIPTION
490 mJ
The ZXMS6005DG is a self protected low side MOSFET with logic
level input. It integrates over-temperature, over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6005DG is ideal as a general purpose switch driven from 3.3V
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
S
D
D
IN
FEATURES
•
•
•
•
•
•
•
•
•
Compact high power dissipation package
Low input current
Logic Level Input (3.3V and 5V)
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input Protection (ESD)
High continuous current rating
ORDERING INFORMATION
DEVICE
PART
MARK
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY PER
REEL
ZXMS6005DGTA
ZXMS
6005D
7
12 embossed
1,000 units
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© Diodes Incorporated
ZXMS6005DG
Document Number DS32247 Rev. 1 - 2
A Product Line of
Diodes Incorporated
FUNCTIONAL BLOCK DIAGRAM
D
Over Voltage
Protection
dV/dt
limitation
IN
Over temperature
protection
Human
body ESD
protection
Logic
Over current
protection
S
APPLICATIONS AND INFORMATION
•
•
•
•
•
•
Especially suited for loads with a high in-rush current such as lamps and motors.
All types of resistive, inductive and capacitive loads in switching applications.
μC compatible power switch for 12V DC applications.
Automotive rated.
Replaces electromechanical relays and discrete circuits.
Linear Mode capability - the current-limiting protection circuitry is designed to de-activate
at low VDS to minimise on state power dissipation. The maximum DC operating current is
therefore determined by the thermal capability of the package/board combination, rather
than by the protection circuitry. This does not compromise the product’s ability to self-
protect at low VDS.
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© Diodes Incorporated
ZXMS6005DG
Document Number DS32247 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
60
UNIT
V
Continuous Drain-Source Voltage
Drain-Source Voltage for short circuit protection
Continuous Input Voltage
VDS
VDS(SC)
VIN
24
V
-0.5 ... +6
V
Continuous Input Current
-0.2V≤VIN≤6V
IIN
mA
No limit
VIN<-0.2V or VIN>6V
│IIN │≤2
Operating Temperature Range
Storage Temperature Range
Tj,
-40 to +150
-55 to +150
°C
Tstg
PD
°C
1.3
W
Power Dissipation at TA =25°C (a)
10.4
Linear Derating Factor
mW/°C
PD
3.0
24
W
Power Dissipation at TA =25°C (b)
Linear Derating Factor
mW/°C
Pulsed Drain Current @ VIN=3.3V
Pulsed Drain Current @ VIN=5V
IDM
IDM
IS
5
6
A
A
Continuous Source Current (Body Diode) (a)
Pulsed Source Current (Body Diode)
2.5
10
490
A
ISM
EAS
A
mJ
Unclamped single pulse inductive energy, Tj=25°C,
ID=0.5A, VDD=24V
Electrostatic Discharge (Human Body Model)
Charged Device Model
VESD
VCDM
4000
1000
V
V
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
Junction to Case (c)
RθJA
RθJA
RθJC
96
42
12
°C/W
°C/W
°C/W
NOTES
(a) For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in
still air conditions.
(b) For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in
still air conditions.
(c) Thermal resistance from junction to the mounting surfaces of the drain pins.
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© Diodes Incorporated
ZXMS6005DG
Document Number DS32247 Rev. 1 - 2
A Product Line of
Diodes Incorporated
RECOMMENDED OPERATING CONDITIONS
The ZXMS6005DG is optimised for use with µC operating from 3.3V and 5V supplies.
Symbol Description
Min
0
-40
3
0
0
Max
5.5
125
5.5
0.7
24
Units
V
°C
V
V
V
VIN
TA
Input voltage range
Ambient temperature range
VIH
VIL
VP
High level input voltage for MOSFET to be on
Low level input voltage for MOSFET to be off
Peripheral supply voltage (voltage to which load is referred)
CHARACTERISTICS
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
Limited by Over-Current Protection
1ms
Limited
by RDS(on)
See Note (b)
DC
1s
100ms
10ms
100m
10m
Single Pulse
Tamb=25°C
See Note (a)
Limit of s/c protection
10
See Note (a)
0
25
50
75
100
125
150
1
VDS Drain-Source Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
100
90
80
70
60
50
40
30
20
10
0
Tamb=25°C
Single Pulse
Tamb=25°C
100
10
1
See Note (a)
See Note (a)
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
1
100µ 1m 10m 100m
10
100
1k
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
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© Diodes Incorporated
ZXMS6005DG
Document Number DS32247 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
CONDITIONS
Static Characteristics
Drain-Source Clamp Voltage
Off state Drain Current
Off state Drain Current
Input Threshold Voltage
Input Current
VDS(AZ)
IDSS
IDSS
VIN(th)
IIN
60
65
70
V
ID=10mA
1
µA
uA
V
VDS=12V, VIN=0V
VDS=36V, VIN=0V
VDS=VGS, ID=1mA
VIN=+3V
2
0.7
1
1.5
100
200
300
60
120
μA
μA
μA
Input Current
IIN
VIN=+5V
Input Current while over
temperature active
VIN=+5V
Static Drain-Source On-State
Resistance
RDS(on)
170
150
250
200
VIN=+3V, ID=1A
VIN=+5V, ID=1A
mΩ
mΩ
Static Drain-Source On-State
Resistance
RDS(on)
Continuous Drain Current (a)
Continuous Drain Current (a)
Continuous Drain Current (b)
Continuous Drain Current (b)
Current Limit (d)
ID
1.4
1.6
1.9
2.0
2.2
3.3
A
A
A
A
A
A
VIN=3V; TA=25°C
VIN=5V; TA=25°C
VIN=3V; TA=25°C
VIN=5V; TA=25°C
VIN=+3V,
ID
ID
ID
ID(LIM)
ID(LIM)
5
7
Current Limit (d)
VIN=+5V
Dynamic Characteristics
Turn On Delay Time
Rise time
td(on)
tr
td(off)
ff
6
VDD=12V, ID=1A,
VGS=5V
μs
μs
μs
μs
14
34
19
Turn Off Delay Time
Fall Time
Notes:
(d) The drain current is restricted only when the device is in saturation (see graph ‘typical output
characteristic’). This allows the device to be used in the fully on state without interference from the
current limit. The device is fully protected at all drain currents, as the low power dissipation
generated outside saturation makes current limit unnecessary.
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© Diodes Incorporated
ZXMS6005DG
Document Number DS32247 Rev. 1 - 2
A Product Line of
Diodes Incorporated
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
CONDITIONS
Over-temperature Protection
Thermal Overload Trip
Temperature (e)
TJT
150
175
10
°C
°C
Thermal hysteresis (e)
Note:
(e) Over-temperature protection is designed to prevent device destruction under fault conditions.
Fault conditions are considered as “outside” normal operating range, so this part is not designed
to withstand over-temperature for extended periods..
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© Diodes Incorporated
ZXMS6005DG
Document Number DS32247 Rev. 1 - 2
A Product Line of
Diodes Incorporated
TYPICAL CHARACTERISTICS
9
8
7
6
5
4
3
2
1
0
4.5V
3.5V
5V
120
100
80
60
40
20
0
TA = 25°C
4V
3V
2.5V
2V
VIN
1.5V
10 11 12
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
VIN Input Voltage (V)
VDS Drain-Source Voltage (V)
Input Current vs Input Voltage
Typical Output Characteristic
1.4
ID = 1A
VIN = VDS
ID = 1mA
1.3
1.2
1.1
1.0
0.9
0.8
0.4
TJ = 150°C
0.2
0.0
TJ = 25°C
4.0
2.0
2.5
3.0
3.5
4.5
5.0
-75 -50 -25
0
25 50 75 100 125 150
TJ Junction Temperature (°C)
VIN Input Voltage (V)
On-Resistance vs Input Voltage
Threshold Voltage vs Temperature
0.40
10
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
TJ=150°C
1
VIN = 3V
TJ=25°C
0.1
VIN = 5V
0.01
-75 -50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
TJ Junction Temperature (°C)
Reverse Diode Characteristic
On-Resistance vs Temperature
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© Diodes Incorporated
ZXMS6005DG
Document Number DS32247 Rev. 1 - 2
A Product Line of
Diodes Incorporated
12
10
8
12
10
8
ID=1A
ID=1A
VDS
VDS
6
6
VIN
4
4
VIN
2
2
0
-50
0
-50
0
50
100 150 200 250 300
0
50
100 150 200 250 300
Time (μs)
Time (μs)
Switching Speed
Switching Speed
VIN = 5V
VDS = 15V
RD = 0Ω
8
6
4
2
0
-2
0
2
4
6
8
10
12
Time (ms)
Typical Short Circuit Protection
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© Diodes Incorporated
ZXMS6005DG
Document Number DS32247 Rev. 1 - 2
A Product Line of
Diodes Incorporated
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS
DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS
FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or
other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume
any liability arising out of the application or use of this document or any product described herein; neither does Diodes
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document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes
Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all
damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through
unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers
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Products described herein may be covered by one or more United States, international or foreign patents pending. Product
names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems
without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use
provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support
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requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices
or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes
Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages
arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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© Diodes Incorporated
ZXMS6005DG
Document Number DS32247 Rev. 1 - 2
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