ZXMS6004N8Q-13 [DIODES]
Power Field-Effect Transistor,;
| 型号： | ZXMS6004N8Q-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总8页 (文件大小：430K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMS6004N8Q
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE LOW-SIDE INTELLIFET
Product Summary
Features and Benefits
Low Input Current
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Overvoltage Protection (active clamp)
Thermal Shutdown with Auto Restart
Overcurrent Protection
Input Protection (ESD)
High Continuous Current Rating
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Characterized to AEC-Q101-006 Grade E for Short-circuit
Reliability
ID
VDS
RDS(ON)
EAS
TA = +25°C
60V
500mΩ
120mJ
1.3A
Description
The ZXMS6004N8Q is a self-protected low side IntelliFET® with logic
level input. It integrates over-temperature, overcurrent, overvoltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6004N8Q is ideal as a general purpose switch driven from 3.3V
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
PPAP Capable (Note 4)
Mechanical Data
Applications
Case: SO-8
Especially Suited for Loads with a High In-rush Current Such As
Lamps and Motors
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 80.2mg (Approximate)
All types of resistive, inductive and capacitive loads in switching
applications
e3
μC Compatible Power Switch for 12V and 24V DC Applications
Replaces electromechanical relays and discrete circuits
Linear Mode capability - the current-limiting protection circuitry is
designed to de-activate at low VDS to minimize on state power
dissipation. The maximum DC operating current is therefore
determined by the thermal capability of the package/board
combination, rather than by the protection circuitry. This does not
compromise the product‟s ability to self-protect at low VDS
.
D
SO-8
S
S
D
D
D
D
IN
S
IN
S
Top View
Pin Out
Top View
Device Symbol
Ordering Information (Note 5)
Part number
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXMS6004N8Q-13
6004N8
13
12
2,500 units
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated‟s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
6004N8 = Product Name
YY: Year
WW: Week: 01~52;
52 represents 52 and 53 week
Logo
Part No.
6004N8
YY WW
Pin 1.
Top View
IntelliFET is a registered trademark of Diodes Incorporated.
1 of 8
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June 2016
© Diodes Incorporated
ZXMS6004N8Q
Document number: DS38897 Rev. 2 - 2
ZXMS6004N8Q
Functional Block Diagram
dV/dt
limitation
Absolute Maximum Ratings (@TA = +25°C, unless otherwise stated.)
Characteristic
Continuous Drain-Source Voltage
Symbol
VDS
Value
60
Units
V
V
V
Drain-Source Voltage for Short Circuit Protection
Continuous Input Voltage
36
VDS(SC)
VIN
-0.5 to +6
No limit
│IIN │ 2
Continuous Input Current @-0.2V ≤ VIN ≤ 6V
Continuous Input Current @VIN < -0.2V or VIN > 6V
Pulsed Drain Current @VIN = 3.3V
mA
IIN
2
2.5
1
A
A
A
A
IDM
IDM
IS
Pulsed Drain Current @VIN = 5V
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode)
Unclamped Single Pulse Inductive Energy,
TJ = +25°C, ID = 0.5A, VDD = 24V
5
ISM
120
mJ
EAS
Electrostatic Discharge (Human Body Model)
Charged Device Model
4,000
1,000
V
V
VHBM
VCDM
Thermal Resistance (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
1.28
10
W
mW/°C
Power Dissipation at TA = +25°C (Note 5)
Linear Derating Factor
PD
1.65
12.4
W
mW/°C
Power Dissipation at TA = +25°C (Note 6)
Linear Derating Factor
PD
Thermal Resistance, Junction to Ambient (Note 5)
98
76
°C/W
°C/W
°C/W
°C
RθJA
RθJA
RθJC
TJ
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating Temperature Range
12
-40 to +150
-55 to +150
Storage Temperature Range
°C
TSTG
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance between junction and the mounting surfaces of drain and source pins.
IntelliFET is a registered trademark of Diodes Incorporated.
2 of 8
www.diodes.com
June 2016
© Diodes Incorporated
ZXMS6004N8Q
Document number: DS38897 Rev. 2 - 2
ZXMS6004N8Q
Recommended Operating Conditions
The ZXMS6004N8Q is optimized for use with μC operating from 3.3V and 5V supplies.
Characteristic
Symbol
VIN
Min
0
Max
Unit
V
Input Voltage Range
5.5
+125
5.5
Ambient Temperature Range
-40
3
°C
V
TA
High Level Input Voltage for MOSFET to be on
Low Level Input Voltage for MOSFET to be off
Peripheral Supply Voltage (voltage to which load is referred)
VIH
0
0.7
V
VIL
0
36
V
VP
Electrical Characteristics (@TA = +25°C, unless otherwise stated.)
Characteristic
Static Characteristics
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Clamp Voltage
60
–
65
–
70
0.5
1
V
μA
V
VDS(AZ)
IDSS
VIN(TH)
IIN
ID = 10mA
VDS = 12V, VIN = 0V
VDS = 36V, VIN = 0V
VDS = VGS, ID = 1mA
VIN = 3V
Off State Drain Current
–
–
Input Threshold Voltage
0.7
–
1
1.5
100
200
400
600
500
–
60
120
–
Input Current
μA
μA
mΩ
–
VIN = 5V
–
–
Input Current While Over-Temperature Active
Static Drain-Source On-State Resistance
VIN = 5V
–
400
350
–
VIN = 3V, ID = 0.5A
VIN = 5V, ID = 0.5A
RDS(ON)
–
0.9
1.0
1.2
1.3
0.7
1
VIN = 3V, TA = +25°C
VIN = 5V, TA = +25°C
VIN = 3V, TA = +25°C
VIN = 5V, TA = +25°C
VIN = 3V
Continuous Drain Current (Note 5)
Continuous Drain Current (Note 6)
Current Limit (Note 8)
–
–
A
A
ID
–
–
–
–
–
1.7
2.2
ID(LIM)
–
VIN = 5V
Dynamic Characteristics
Turn On Delay Time
–
–
–
–
–
–
–
–
5
tD(ON)
tR
tD(OFF)
tF
Rise Time
10
45
15
VDD = 12V, ID = 0.5A, VGS
5V
=
μs
Turn Off Delay Time
Fall Time
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 9)
Thermal Hysteresis (Note 9)
–
–
+150
+175
+10
°C
°C
–
–
TJT
–
∆TJT
Notes:
8. The drain current is restricted only when the device is in saturation (see graph „typical output characteristic‟). This allows the device to be used in the fully
on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
9. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods.
IntelliFET is a registered trademark of Diodes Incorporated.
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www.diodes.com
June 2016
© Diodes Incorporated
ZXMS6004N8Q
Document number: DS38897 Rev. 2 - 2
ZXMS6004N8Q
Thermal Characteristics
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
10
RDS(ON)
Limited
PW = 100µs
1
DC
Note 6
PW = 10s
PW = 1s
0.1
Note 5
PW = 100ms
PW = 10ms
Single Pulse
TJ(Max) = 150℃
TC = 25℃
PW = 1ms
VGS = 5V
0.01
0.1
1
10
100
0
25
50
75
100
125
150
175
VDS, DRAIN-SOURCE VOLTAGE (V)
TA, AMBIENT TEMPERATURE (℃)
SOA, Safe Operation Area
DC Forward Current Derating
100
90
80
70
60
50
D=0.1
D=0.5
40
D=0.05
30
D=0.3
20
D=0.02
D=0.01
D=0.005
D=Single Pulse
Duty Cycle,
D = t1/ t2
10
0
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Transient Thermal Resistance
1000
Single Pulse
TA = 25oC
100
10
1
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Single Pulse Maximum Power Dissipation
IntelliFET is a registered trademark of Diodes Incorporated.
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www.diodes.com
June 2016
© Diodes Incorporated
ZXMS6004N8Q
Document number: DS38897 Rev. 2 - 2
ZXMS6004N8Q
Typical Characteristics
IntelliFET is a registered trademark of Diodes Incorporated.
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© Diodes Incorporated
ZXMS6004N8Q
Document number: DS38897 Rev. 2 - 2
ZXMS6004N8Q
Typical Characteristics (Cont.)
VIN = 5V
VDS = 15V
RC = 0Ω
TA = 25C°
IntelliFET is a registered trademark of Diodes Incorporated.
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June 2016
© Diodes Incorporated
ZXMS6004N8Q
Document number: DS38897 Rev. 2 - 2
ZXMS6004N8Q
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-8
SO-8
Dim
A
A1
A2
A3
b
Min
-
0.10
1.30
0.15
0.3
Max
1.75
0.20
1.50
0.25
0.5
D
E
E1
e
4.85
5.90
3.85
4.95
6.10
3.95
1.27 Typ
h
L
-
0.35
0.82
8
0.62
0
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-8
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
IntelliFET is a registered trademark of Diodes Incorporated.
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www.diodes.com
June 2016
© Diodes Incorporated
ZXMS6004N8Q
Document number: DS38897 Rev. 2 - 2
ZXMS6004N8Q
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
IntelliFET is a registered trademark of Diodes Incorporated.
8 of 8
www.diodes.com
June 2016
© Diodes Incorporated
ZXMS6004N8Q
Document number: DS38897 Rev. 2 - 2
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