ZXMS6004SG [DIODES]
60V N-channel self protected enhancement mode; 60V N沟道自我保护的增强型
| 型号： | ZXMS6004SG |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 60V N-channel self protected enhancement mode |
| 文件： | 总10页 (文件大小：474K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
ZXMS6004SG
60V N-channel self protected enhancement mode
Intellifet MOSFET
Summary
Continuous drain source voltage
On-state resistance
60 V
500 mΩ
1.3 A
Nominal load current (V = 5V)
IN
Clamping energy
480mJ
Description
The ZXMS6004SG is a self protected low side MOSFET with logic level
input. It integrates over-temperature, over-current, over-voltage (active
clamp) and ESD protected logic level functionality. The ZXMS6004SG is
ideal as
a general purpose switch driven from 3.3V or 5V
microcontrollers in harsh environments where standard MOSFETs are
not rugged enough.
Features
•
•
•
•
•
•
•
•
•
Compact high power dissipation package
Low input current
Logic Level Input (3.3V and 5V)
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
S
S
D
IN
SOT223
Input Protection (ESD)
High continuous current rating
Ordering information
Device
Part mark
Reel size
(inches)
Tape width
(mm)
Quantity per reel
3,000 units
ZXMS66004SGTA
ZXMS
6004S
7
12 embossed
Issue 1 - December 2008
© Diodes Incorporated, 2008
1
www.zetex.com
www.diodes.com
ZXMS6004SG
Functional block diagram
D
Over-voltage
Protection
dV/dt
Limitation
IN
Over-temperature
Protection
ESD
Protection
Logic
Over-current
Protection
S
Application information
•
•
•
•
•
•
Especially suited for loads with a high in-rush current such as lamps and motors.
All types of resistive, inductive and capacitive loads in switching applications.
μC compatible power switch for 12V and 24V DC applications.
Automotive rated.
Replaces electromechanical relays and discrete circuits.
Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at
low V
to minimise on state power dissipation. The maximum DC operating current is
DS
therefore determined by the thermal capability of the package/board combination, rather than
by the protection circuitry. This does not compromise the product’s ability to self-protect at low
V
.
DS
Issue 1 - December 2008
© Diodes Incorporated, 2008
2
www.zetex.com
www.diodes.com
ZXMS6004SG
Absolute maximum ratings
Parameter
Symbol
Limit
60
Unit
V
Continuous Drain-Source voltage
Drain-Source voltage for short circuit protection
Continuous input voltage
V
V
V
DS
36
V
DS(SC)
IN
-0.5 ... +6
V
Continuous input current
I
mA
IN
-0.2V≤V ≤6V
No limit
IN
│I │≤2
V <-0.2V or V >6V
IN
IN
IN
Operating temperature range
T ,
-40 to +150
-55 to +150
1.0
°C
°C
W
j
Storage temperature range
T
P
stg
D
(a)
(b)
Power dissipation at T =25°C
A
8.0
1.6
mW/°C
W
Linear derating factor
P
Power dissipation at T =25°C
D
A
12.8
2
mW/°C
A
Linear derating factor
Pulsed drain current @ V =3.3V
I
I
I
I
IN
DM
DM
S
Pulsed drain current @ V =5V
2.5
1
A
A
IN
(a)
Continuous source current (Body Diode)
Pulsed dource current (Body Diode)
5
A
SM
Unclamped single pulse inductive energy,
Tj=25°C, I =0.5A, V =24V
E
480
mJ
AS
D
DD
Electrostatic discharge (Human body model)
V
V
4000
1000
V
V
ESD
Charged device model
CDM
Thermal resistance
Parameter
Symbo
Value
125
83
Unit
(a)
R
°C/W
°C/W
°C/W
Junction to ambient
θJA
(b)
R
Junction to ambient
θJA
(c)
R
39
Junction to case
θJC
NOTES
(a) For a device surface mounted on a 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air
conditions.
(b)For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board in still air
conditions.
(c) Thermal resistance from junction to the mounting surface of the drain pin.
Issue 1 - December 2008
© Diodes Incorporated, 2008
3
www.zetex.com
www.diodes.com
ZXMS6004SG
Recommended operating conditions
The ZXMS6004SG is optimised for use with µC operating from 3.3V and 5V supplies.
Symbol Description
Min
Max
Units
VIN
TA
Input voltage range
0
5.5
V
Ambient temperature range
-40
3
0
125
5.5
0.7
36
°C
V
V
VIH
VIL
VP
High level input voltage for MOSFET to be on
Low level input voltage for MOSFET to be off
Peripheral supply voltage (voltage to which load is referred)
0
V
Characteristics
Issue 1 - December 2008
© Diodes Incorporated, 2008
4
www.zetex.com
www.diodes.com
ZXMS6004SG
Electrical characteristics (at T
= 25°C unless otherwise stated).
amb
Parameter
Symbol Min
Typ
Max
Unit
Conditions
Static Characteristics
Drain-Source clamp voltage
Off-state drain Ccrrent
Off-state drain current
V
60
65
70
V
I =10mA
D
DS(AZ)
I
I
500
1
nA
μA
V
V
V
V
=12V, V =0V
DSS
DS
DS
DS
IN
=36V, V =0V
DSS
IN
V
I
0.7
1
1.5
100
200
400
=V , I =1mA
Input threshold voltage
Input current
IN(th)
GS
D
60
120
V =+3V
μA
μA
μA
IN
IN
Input current
I
V =+5V
IN
IN
Input current while over
V =+5V
IN
temperature active
Static Drain-Source on-state
resistance
Static Drain-Source on-state
R
R
I
400
350
600
500
V =+3V, I =0.5A
IN D
mΩ
mΩ
DS(on)
DS(on)
V =+5V, I =0.5A
IN D
resistance
Continuous drain current
(a)
0.9
1.0
A
A
V =3V; T =25°C
IN A
D
Continuous drain cCurrent
I
V =5V; T =25°C
IN A
D
(a)
(b)
I
I
I
I
1.2
1.3
0.7
1
A
A
A
A
V =3V; T =25°C
IN A
Continuous drain current
D
(b)
V =5V; T =25°C
Continuous drain current
D
IN
A
Current limit
1.7
2.2
V =+3V,
D(LIM)
D(LIM)
IN
(c)
V =+5V
Current limit
IN
Dynamic characteristics
Turn-on delay time
Rise time
t
t
t
f
5
V
V
=12V, I =0.5A,
μs
μs
μs
μs
d(on)
DD
GS
D
=5V
10
45
15
r
Turn-off delay time
Fall time
d(off)
f
Notes:
(d)The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This
allows the device to be used in the fully on state without interference from the current limit. The device is fully
protected at all drain currents, as the low power dissipation generated outside saturation makes current limit
unnecessary.
Issue 1 - December 2008
© Diodes Incorporated, 2008
5
www.zetex.com
www.diodes.com
ZXMS6004SG
Electrical characteristics - continued
Parameter
Symbol
Min
Typ
Max Unit Conditions
Over-temperature protection
Thermal overload trip
TJT
150
175
10
°C
°C
(a)
temperature
(a)
Thermal hysteresis
Note:
(a) Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are
considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for
extended periods..
Issue 1 - December 2008
© Diodes Incorporated, 2008
6
www.zetex.com
www.diodes.com
ZXMS6004SG
Typical characteristics
Issue 1 - December 2008
© Diodes Incorporated, 2008
7
www.zetex.com
www.diodes.com
ZXMS6004SG
Issue 1 - December 2008
© Diodes Incorporated, 2008
8
www.zetex.com
www.diodes.com
ZXMS6004SG
Package information - SOT223
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Min.
Max.
Min.
Max.
Min.
Max.
6.70
Min.
Max.
0.264
A
A1
A2
b
-
1.8
0.1
-
0.071
0.004
0.0649
0.033
0.122
0.013
D
e
6.30
0.248
0.02
1.55
0.66
2.90
0.23
0.0008
0.0610
0.026
0.114
0.009
2.30 BSC
4.60 BSC
6.70
0.0905 BSC
0.181 BSC
1.65
0.84
3.10
0.33
e1
E
7.30
3.70
-
0.264
0.287
0.146
-
b2
C
E1
L
3.30
0.90
0.130
0.355
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Issue 1 - December 2008
© Diodes Incorporated, 2008
9
www.zetex.com
www.diodes.com
ZXMS6004SG
Definitions
Product change
Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property
rights arising from such use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether
in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business,
contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances.
Life support
Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a
representation relating to the products or services concerned.
Terms and Conditions
All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the
two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Diodes Zetex sales office.
Quality of product
Diodes Zetex Semconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Diodes Inc. or one of our regionally
authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com
Diodes Inc. does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.
Green compliance
Diodes Inc. is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory
requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use
of hazardous substances and/or emissions.
All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance
with WEEE and ELV directives.
Product status key:
“Preview”
“Active”
Future device intended for production at some point. Samples may be available
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
“Issue”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
Sales offices
The Americas
Europe
Taiwan
Shanghai
Shenzhen
Korea
3050 E. Hillcrest Drive
Westlake Village,
CA 91362-3154
Kustermann-Park
Balanstraße 59,
D-81541 München
Germany
7F, No. 50,
Min Chuan Road
Hsin-Tien
Rm. 606, No.1158
Changning Road
Shanghai, China
ANLIAN Plaza, #4018
Jintian Road
Futian CBD,
6 Floor, Changhwa B/D,
1005-5 Yeongtong-dong,
Yeongtong-gu, Suwon-si,
Gyeonggi-do, Korea 443-813
Tel: (+1) 805 446 4800
Taipei, Taiwan
Tel: (+86) 215 241 4882
Shenzhen, China
Fax: (+1) 805 446 4850 Tel: (+49) 894 549 490
Tel: (+886) 289 146 000 Fax (+86) 215 241 4891
Tel: (+86) 755 882 849 88 Tel: (+82) 312 731 884
Fax: (+86) 755 882 849 99 Fax: (+82) 312 731 885
Fax: (+49) 894 549 4949 Fax: (+886) 289 146 639
Issue 1 - December 2008
© Diodes Incorporated, 2008
10
www.zetex.com
www.diodes.com
相关型号：
©2020 ICPDF网 联系我们和版权申明