ZXMS6004SGQTA [DIODES]
Small Signal Field-Effect Transistor,;
| 型号： | ZXMS6004SGQTA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：384K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMS6004SGQ
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET ® MOSFET
Product Summary
Features and Benefits
Continuous Drain Source Voltage VDS= 60V
Compact High Power Dissipation Package
Low Input Current
On-State Resistance
500mΩ
1.3A
Nominal Load Current (VIN = 5V)
Clamping Energy
Logic Level Input (3.3V and 5V)
480mJ
Short Circuit Protection with Auto Restart
Over Voltage Protection (Active Clamp)
Thermal Shutdown with Auto Restart
Over-Current Protection
Description
The ZXMS6004SGQ is a self protected low side MOSFET with logic
level input. It integrates over-temperature, over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6004SGQ is ideal as a general purpose switch driven from 3.3V
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
Input Protection (ESD)
High Continuous Current Rating
Lead-Free Finish; RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Applications
Case: SOT-223
Especially suited for loads with a high in-rush current such as
lamps and motors
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
All types of resistive, inductive and capacitive loads in switching
applications
μC compatible power switch for 12V and 24V DC applications
Weight: 0.112 grams (approximate)
Automotive rated
Replaces electromechanical relays and discrete circuits.
Linear Mode capability - the current-limiting protection circuitry is
designed to de-activate at low VDS to minimise on state power
dissipation. The maximum DC operating current is therefore
determined by the thermal capability of the package/board
combination, rather than by the protection circuitry. This does not
compromise the product’s ability to self- protect at low VDS
.
Top View
Top view
Pin Out
Ordering Information
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXMS6004SGQTA
ZXMS6004S
7
12
3,000 units
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXMS
6004S
ZXMS6004S = Product type Marking Code
IntelliFET is a registered trademark of Diodes Incorporated.
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ZXMS6004SGQ
Document number: DS33610 Rev. 1 - 2
ZXMS6004SGQ
Functional Block Diagram
Absolute Maximum Ratings (@Tamb = +25°C, unless otherwise stated.)
Characteristic
Symbol
VDS
Value
60
Units
Continuous Drain-Source Voltage
Drain-Source Voltage for Short Circuit Protection
Continuous Input Voltage
V
V
V
36
VDS(SC)
VIN
-0.5 ... +6
No limit
Continuous Input Current @-0.2V ≤ VIN ≤ 6V
mA
IIN
│IIN │≤2
Continuous Input Current @VIN < -0.2V or VIN > 6V
2
2.5
1
A
A
A
A
Pulsed Drain Current @VIN = 3.3V
IDM
IDM
IS
Pulsed Drain Current @VIN = 5V
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode)
5
ISM
Unclamped Single Pulse Inductive Energy,
TJ = +25°C, ID = 0.5A, VDD = 24V
480
mJ
EAS
Electrostatic Discharge (Human Body Model)
Charged Device Model
4000
1000
V
V
VESD
VCDM
Thermal Characteristics (@Tamb = +25°C, unless otherwise stated.)
Characteristic
Symbol
Value
Units
1.0
8.0
W
mW/°C
Power Dissipation at Tamb = +25°C (Note 6)
Linear Derating Factor
PD
PD
1.6
12.8
W
mW/°C
Power Dissipation at Tamb = +25°C (Note 7)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 8)
Operating Temperature Range
125
83
°C/W
°C/W
°C/W
°C
RθJA
RθJA
RθJC
TJ’
39
-40 to +150
-55 to +150
Storage Temperature Range
°C
TSTG
Note:
6. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and
source 20% to isolate connections.
7. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and
source 20% to isolate connections.
8. Thermal resistance between junction and the mounting surfaces of drain and source pins.
IntelliFET is a registered trademark of Diodes Incorporated.
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Document number: DS33610 Rev. 1 - 2
ZXMS6004SGQ
Recommended Operating Conditions
The ZXMS6004SGQ is optimized for use with μC operating from 3.3V and 5V supplies.
Characteristic
Symbol
VIN
Min
0
Max
5.5
Unit
V
Input Voltage Range
Ambient Temperature Range
-40
3
+125
5.5
°C
V
TA
High Level Input Voltage for MOSFET to be on
Low level input voltage for MOSFET to be off
Peripheral Supply Voltage (voltage to which load is referred)
VIH
0
0.7
V
VIL
0
36
V
VP
Thermal Characteristics
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Limited by Over-Current Protection
1ms
Limited
by RDS(on)
See Note (b)
1
100m
10m
DC
1s
100ms
10ms
Single Pulse
Tamb=25°C
See Note (a)
Limit of s/c protection
10
See Note (a)
(°C)
0.0
0
1
25
50
75
100
125
150
VDS Drain-Source Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
120
100
80
60
40
20
0
Tamb=25°C
Single Pulse
Tamb=25°C
100
10
1
See Note (a)
See Note (a)
D=0.5
Single Pulse
D=0.05
D=0.2
D=0.1
100µ 1m 10m 100m
1 10 100 1k
100µ 1m 10m 100m
1
10 100 1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
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ZXMS6004SGQ
Document number: DS33610 Rev. 1 - 2
ZXMS6004SGQ
Electrical Characteristics (@Tamb = +25°C, unless otherwise stated.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Static Characteristics
Drain-Source Clamp Voltage
60
–
65
–
70
0.5
1
V
μA
V
VDS(AZ)
IDSS
VIN(th)
IIN
ID = 10mA
V
DS = 12V, VIN = 0V
Off State Drain Current
–
–
VDS = 36V, VIN = 0V
VDS = VGS, ID = 1mA
VIN = +3V
Input Threshold Voltage
0.7
–
1
1.5
100
200
400
600
500
–
60
120
–
Input Current
μA
μA
mΩ
–
VIN = +5V
–
–
Input Current While Over Temperature Active
Static Drain-Source On-State Resistance
V
V
V
V
IN = +5V
–
400
350
–
IN = +3V, ID = 0.5A
IN = +5V, ID = 0.5A
IN = 3V; TA = +25°C
RDS(on)
–
0.9
1
Continuous Drain Current (Note 6)
Continuous Drain Current (Note 7)
Current Limit (Note 8)
–
–
VIN = 5V; TA = +25°C
VIN = 3V; TA = +25°C
A
A
ID
–
–
1.2
1.3
0.7
1
–
–
V
V
V
IN = 5V; TA = +25°C
IN = +3V
–
1.7
2.2
ID(LIM)
–
IN = +5V
Dynamic Characteristics
Turn On Delay Time
–
–
–
–
–
–
–
–
5
td(on)
tr
td(off)
ff
Rise Time
10
45
15
μs
V
DD = 12V, ID = 0.5A, VGS = 5V
Turn Off Delay Time
Fall Time
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 10)
Thermal Hysteresis (Note 10)
–
–
150
–
175
10
°C
°C
–
–
TJT
Notes:
9. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the
fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
10. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods.
IntelliFET is a registered trademark of Diodes Incorporated.
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ZXMS6004SGQ
Document number: DS33610 Rev. 1 - 2
ZXMS6004SGQ
Typical Characteristics
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ZXMS6004SGQ
Document number: DS33610 Rev. 1 - 2
ZXMS6004SGQ
Typical Characteristics - Continued
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ZXMS6004SGQ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
Q
b1
C
SOT223
Dim Min Max Typ
1.55 1.65 1.60
A1 0.010 0.15 0.05
A
E
E1
b
b1
C
D
E
E1
e
e1
L
0.60 0.80 0.70
2.90 3.10 3.00
0.20 0.30 0.25
6.45 6.55 6.50
3.45 3.55 3.50
6.90 7.10 7.00
Gauge
Plane
0.25
Seating
Plane
L
-
-
-
-
4.60
2.30
e1
b
0.85 1.05 0.95
0.84 0.94 0.89
e
Q
All Dimensions in mm
A
A1
7
°
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Dimensions Value (in mm)
Y1
X1
X2
Y1
Y2
C1
C2
3.3
1.2
1.6
1.6
6.4
2.3
C1
Y2
C2
X2
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ZXMS6004SGQ
Document number: DS33610 Rev. 1 - 2
ZXMS6004SGQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
IntelliFET is a registered trademark of Diodes Incorporated.
8 of 8
www.diodes.com
April 2014
© Diodes Incorporated
ZXMS6004SGQ
Document number: DS33610 Rev. 1 - 2
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