MBRD1035CTL [DIODES]
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER; 10A表面安装式双肖特基整流器
| 型号： | MBRD1035CTL |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总3页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRD1035CTL
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
Features
·
Guard Ring Die Construction for
Transient Protection
DPAK
·
·
·
·
Low Power Loss, High Efficiency
High Surge Capability
Very Low Forward Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, OR’ing, and Polarity Protection
Applications
Min
6.3
¾
Max
6.7
10
Dim
A
E
A
G
H
B
P
4
C
0.3
0.8
D
2.3 Nominal
·
Plastic Material: UL Flammability
J
E
2.1
0.4
1.2
5.3
2.5
0.6
1.6
5.7
Classification Rating 94V-0
B
G
H
1
2
3
Mechanical Data
·
·
J
Case: DPAK Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: See Sheet 2
Weight: 0.4 grams (approx.)
Ordering Information: See Below
M
K
0.5 Nominal
D
K
L
1.3
1.0
5.1
1.8
¾
·
·
·
·
C
L
M
P
5.5
PIN 1
PIN 3
PIN 4, BOTTOMSIDE
HEAT SINK
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Value
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
35
25
V
VR(RMS)
RMS Reverse Voltage
V
A
Average Rectified Output Current
(See Figure 4)
Per Leg
Per Package
5
10
IO
Non-Repetitive Peak Forward Surge Current
IFSM
RqJC
8.3ms Single half sine-wave Superimposed on Rated Load
Per Package (JEDEC Method)
75
A
Typical Thermal Resistance Junction to Case Bottom Side Per Leg
(Note 1)
2.43
°C/W
Voltage Rate of Change @ VR = 35V, Tj = 25°C
Operating Temperature Range
dv/dt
Tj
10,000
V/ms
°C
-55 to +125
-55 to +125
TSTG
Storage Temperature Range
°C
Notes:
1. Device mounted on PC board with 14mm2 (.013mm thick) copper pad areas.
(Note 2)
Ordering Information
Device
Packaging
Shipping
MBRD1035CTL-T
DPAK
2500/Tape & Reel
Notes:
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS30286 Rev. B-2
1 of 3
MBRD1035CTL
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Min
Typ
Max
Unit
Characteristic
Symbol
Test Condition
IR = 500mA
V(BR)R
Reverse Breakdown Voltage (Note 3)
35
¾
¾
V
IF = 5A, TS = 25°C
IF = 5A, TS = 100°C
IF = 10A, TS = 25°C
IF = 10A, TS = 100°C
¾
¾
¾
¾
¾
¾
¾
¾
0.47
0.41
0.56
0.55
VFM
Forward Voltage (Note 3)
V
VR = 35V, Tj = 25°C
VR = 35V, Tj = 100°C
VR = 17.5V, Tj = 25°C
VR = 17.5V, Tj = 100°C
¾
¾
¾
¾
0.04
¾
¾
2.0
30
200
5
mA
mA
mA
IRM
Cj
Peak Reverse Current (Note 3)
Typical Junction Capacitance
¾
mA
f = 1.0MHz, VR = 4.0V DC
¾
340
¾
pF
Notes:
1. Device mounted on PC board with 14mm2 (.013mm thick) copper pad areas.
2. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
3. Short duration pulse test used to minimize self-heating effect.
Marking Information
MBRD1035CTL = Product type marking code
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
YWW
MBRD
1035CTL
100
100
10
1
Tj = +125°C
Tj = 125°C
10
1
Tj = +25°C
Tj = 100°C
Tj = +100°C
0.1
0.1
0.01
0.001
0.01
Tj = +25°C
0.001
0.0001
35
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
200
300
15
20
25
30
0
100
600
400
500
0
5
10
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 1 Typical Forward Characteristics (Per Element)
Fig. 2 Typical Reverse Characteristics (Per Element)
DS30286 Rev. B-2
2 of 3
MBRD1035CTL
1000
100
10
7
6
f = 1MHz
Note 1
5
4
3
Note 2
Note 3
2
1
0
5
0
10
20
25
40
15
30
35
-25
0
75
100
125
150
25
50
VR, REVERSE VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Fig. 4 DC Forward Current Derating (Per Element)
Fig. 3 Typical Junction Capacitance vs.
Reverse Voltage (Per Element)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
2
Tj = 125°C
3
0.5
0
0
5
7
8
9
1
2
3
6
10
4
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 5 Forward Power Dissipation (Per Element)
Notes:
1. TA = TSOLDERING POINT, RqJC = 2.43°C/W, RqCA = 0°C/W.
2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. RqJA in range of 15-30°C/W.
3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of
60-75°C/W.
DS30286 Rev. B-2
3 of 3
MBRD1035CTL
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