MBRD1040 [DIODES]
10A LOW VF SCHOTTKY BARRIER RECTIFIER; 10A低VF肖特基整流器
| 型号： | MBRD1040 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 10A LOW VF SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总3页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRD1040
10A LOW VF SCHOTTKY BARRIER RECTIFIER
Features
·
Guard Ring Die Construction for
Transient Protection
·
·
·
·
·
·
Low Power Loss, High Efficiency
High Surge Capability
High Maximum Junction Temperature Rating
Very Low Forward Voltage Drop
Very Low Leakage Current
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
DPAK
E
A
Min
6.3
¾
Max
6.7
10
Dim
A
G
H
P
4
B
C
0.3
0.8
J
D
2.3 Nominal
B
1
2
3
E
2.1
0.4
1.2
5.3
2.5
0.6
1.6
5.7
·
Plastic Material: UL Flammability
Classification Rating 94V-0
G
H
M
J
Mechanical Data
D
K
K
0.5 Nominal
·
·
Case: DPAK Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking Information: See Page 2
Weight: 0.4 grams (approx.)
C
L
L
1.3
1.0
5.1
1.8
¾
M
P
PIN 1
PIN 3
PIN 4, BOTTOMSIDE
HEAT SINK
·
·
·
5.5
All Dimensions in mm
Note:
Pins 1 & 3 must be electrically
connected at the printed circuit board.
@ TA = 25°C unless otherwise specified
Maximum Ratings
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Value
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
40
V
VR(RMS)
IO
RMS Reverse Voltage
28
10
V
A
Average Rectified Output Current
(Also see Figure 4)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
IFSM
100
A
RqJC
RqJA
Tj
Typical Thermal Resistance Junction to Case
Typical Thermal Resistance Junction to Ambient
Operating Temperature Range
6.0
°C/W
°C/W
°C
80
-65 to +150
-65 to +150
TSTG
Storage Temperature Range
°C
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Min
Typ
Max
Unit
Characteristic
Symbol
Test Condition
V(BR)R
IR = 1mA
Reverse Breakdown Voltage (Note 1)
40
¾
¾
V
IF = 8A, TS = 25°C
IF = 8A, TS = 125°C
IF = 10A, TS = 25°C
¾
¾
¾
0.45
¾
0.49
0.41
0.51
VFM
Forward Voltage (Note 1)
V
0.47
T
S = 25°C, VR = 35V
¾
¾
0.1
0.3
25
IRM
Cj
mA
pF
Peak Reverse Current (Note 1)
Junction Capacitance
TS = 100°C, VR = 35V
12.5
f = 1.0MHz, VR = 4.0V DC
¾
700
¾
Notes:
1. Short duration test pulse used to minimize self-heating effect.
DS30282 Rev. 3 - 2
1 of 3
MBRD1040
(Note 2)
Ordering Information
Device
Packaging
Shipping
MBRD1040-T
DPAK
2500/Tape & Reel
Notes:
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MBRD1040 = Product type marking code
= Manufacturers’ code marking
YWW = Date code marking
YWW
Y = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
MBRD1040
100
10
1000
100
TA = +150ºC
TA = +150°C
1
TA = +100ºC
TA = +25°C
10
1
0.1
TA = +75ºC
0.01
0.001
TA = +75°C
0.1
TA = +25ºC
0.01
0.0001
0
10
20
40
200
300
0
100
600
400
500
5
15
25 30
35
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 1 Typical Forward Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
12
10
8
10,000
1000
100
Note 3
f = 1MHz
Note 4
6
Note 5
4
2
0
5
0
10
VR, REVERSE VOLTAGE (V)
Fig. 3 Typical Junction Capacitance vs. Reverse Voltage
20
25
40
15
30
35
-25
0
75
100
125
150
25
50
TA, AMBIENT TEMPERATURE (°C)
Fig. 4 DC Forward Current Derating
DS30282 Rev. 3 - 2
2 of 3
MBRD1040
8
7
6
Tj = 150°C
Note 7
5
4
3
2
DC
Note 6
1
0
0
7.5
10.5 12 13.5
15
1.5
3
4.5
9
6
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 5 Forward Power Dissipation (Per Element)
Notes:
3. TA = TSOLDERING POINT, RqJC = 6.0°C/W, RqCA = 0°C/W.
4. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. RqJA in range of 15-30°C/W.
5. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of
60-75°C/W.
6. Maximum power disspiation when the device is mounted in accordance to the conditions described in Note 5.
7. Maximum power disspation when the device is mounted in accordance to the conditions described in Note 4.
DS30282 Rev. 3 - 2
3 of 3
MBRD1040
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