FMMT597TC [DIODES]
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| 型号： | FMMT597TC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 暂无描述 晶体 小信号双极晶体管 光电二极管 局域网 |
| 文件： | 总2页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 PNP SILICON PLANAR
FMMT597
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - OCTOBER 1995
COMPLEMENTARY TYPE FMMT497
PARTMARKING DETAIL - 597
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
-300
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-300
V
-5
V
Peak Pulse Current
-1
A
Continuous Collector Current
Base Current
IC
-0.2
A
IB
-200
mA
mW
°C
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
500
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN. MAX. UNITCONDITIONS.
Collector-Base Breakdown Voltage
V(BR)CBO -300
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
Collector-Emitter Breakdown Voltage V(BR)CEO -300
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
V(BR)EBO -5
ICBO
-100 nA VCB=-250V
-100 nA VEB=-4V
-100 nA VCES=-250V
Emitter Cut-Off Current
IEBO
Collector-Emitter Cut-Off Current
Emitter Saturation Voltages
ICES
VCE(sat)
-0.25
-0.25
V
V
IC=-50mA, IB=-5mA
IC=-100mA,
IB=-20mA*
VBE(sat)
VBE(on)
-1.0
-0.85
300
V
V
IC=-100mA,
IB=-20mA*
Base-Emitter Turn-on Voltage
I =-100mA,VCE=-10V*
C
Static Forward Current Transfer Ratio hFE
100
100
100
IC=-1mA, VCE=-10V
IC=-50mA,VCE=-10V*
IC=-100mA,VCE=-10V*
Transition Frequency
Output Capacitance
fT
75
MHz IC=-50mA, VCE=-10V
f=100MHz
Cobo
10
pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
3 - 145
FMMT597
TYPICAL CHARACTERISTICS
0.6
0.6
+25°C
I /I =10
0.5
0.4
-55° C
+25° C
+100° C
I /I =10
I /I =50
0.4
0.3
0.2
0.1
0
0.4
0.3
0.2
0.1
0
1mA
10mA
100mA
1A
1A
1A
1mA
10mA
100mA
1A
IC-Collector Current
IC-Collector Current
VCE(sat) v IC
VCE(sat) v IC
320
240
0.9
0.8
I /I =10
V
=10V
+100° C
0.6
0.4
0.2
0
-55° C
+25° C
+100° C
+25° C
160
80 -55° C
0
1mA
1mA
10mA
100mA
1A
10mA
100mA
IC-Collector Current
IC-Collector Current
hFE V IC
VBE(sat) v IC
1
0.1
0.9
0.8
V
=10V
0.6
0.4
0.2
0
DC
1s
100ms
10ms
1ms
-55° C
+25° C
+100° C
0.01
0.001
100µs
1mA
10mA
100mA
1
10
100
1000
IC-Collector Current
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
3 - 146
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