FMMT614 [ZETEX]
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR; NPN硅平面中功率达林顿晶体管
| 型号： | FMMT614 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR |
| 文件： | 总2页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 APRIL 1996
FMMT614
FEATURES
*
*
*
hFE up to 5k at Ic= 500mA
Fast switching
E
C
Low VCE(sat) at High Ic
PARTMARKING DETAILS 614
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VALUE
UNIT
V
Collector-Base Voltage
120
Collector-Emitter Voltage
100
V
Emitter-Base Voltage
VEBO
10
2
V
Peak Pulse Current
ICM
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
IC
500
mA
mW
°C
Ptot
500
Tj:Tstg
= 25°C).
-55 to +150
amb
PARAMETER
SYMBOL MIN.
TYP.
300
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
VCEO(sus)
V(BR)EBO
120
100
10
V
V
V
IC=10µA, IE=0
Collector-Emitter
Sustaining Voltage
130
14
IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
IE=10µA, IC=0
Collector Cut-Off Current ICBO
Collector Cut-Off Current ICES
0.02
10
nA
µA
nA
VCB=100V, IE=0
VCES=100V, IE=0
VEB=8V, IC=0
10
Emitter Cut-Off Current
IEBO
100
Collector-Emitter
Saturation Voltage
VCE(sat)
0.9
0.78
1.0
0.9
V
V
IC=500mA, IB=5mA*
IC=100mA, IB=0.1mA
Base-Emitter Saturation VBE(sat)
Voltage
1.7
1.5
1.9
V
IC=500mA, IB=5mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.8
V
IC=500mA, VCE=5V*
Static Forward Current
Transfer Ratio
hFE
15K
5K
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
Output Capacitance
Switching Times
Cobo
ton
6
pF
µs
µs
VCB=10V, f=100mHz
0.7
2.5
IC=100µA, IB=0.1mA
VS=10V
toff
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
Typical Characteristics graphs are in preparation. Contact your local Sales office for more information.
3 - 147
FMMT614
TYPICAL CHARACTERISTICS
2
1
0
2
1
0
1m
1m
1m
10m
100m
1
10
10
10
1m
10m
100m
1
10
IC - Collector Current (A)
IC- Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
75k
50k
25k
0
2.4
1.2
0
10m
100m
1
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
hFE v IC
VBE(sat) v IC
2
1
0
10
1
0.1
0.01
µ
0.001
10m
10m
100m
1
100m
1
10
100
IC- Collector Current (A)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
PAGE NUMBER
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