FMMT614TC [DIODES]
Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN;
| 型号： | FMMT614TC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：539K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMMT614
100V NPN DARLINGTON MEDIUM POWER TRANSISTOR IN SOT23
Features
Mechanical Data
BVCEO > 100V
Case: SOT23
IC = 0.5A High Continuous Collector Current
ICM = 2A Peak Pulse Current
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
500mW Power Dissipation
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-
STD-202, Method 208
Darlington Transistor with High hFE up to 5k at IC = 0.5A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (FMMT614Q)
Weight: 0.008 grams (Approximate)
SOT23
E
C
B
Top View
Pin-Out
Top View
Device Symbol
Ordering Information (Note 4)
Part Number
FMMT614TA
FMMT614TC
Compliance
AEC-Q101
AEC-Q101
Marking
614
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
3,000
7
8
8
614
13
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
614 = Product Type Marking Code
614
1 of 7
www.diodes.com
January 2016
© Diodes Incorporated
FMMT614
Document number: DS33109 Rev. 4 - 2
FMMT614
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
120
100
10
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current
Peak Pulse Current
500
2
mA
A
ICM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Symbol
Value
500
Unit
mW
°C/W
°C/W
°C
PD
RθJA
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Lead (Note 6)
Operating and Storage Temperature Range
250
197
RθJL
-55 to +150
TJ, TSTG
ESD Ratings (Note 7)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Symbol
ESD HBM
ESD MM
Value
2,000
200
Unit
V
V
JEDEC Class
2
B
Notes:
5. For a device mounted on 15mm x 15mm 1oz weight copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst
operating in a steady-state.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
2 of 7
www.diodes.com
January 2016
© Diodes Incorporated
FMMT614
Document number: DS33109 Rev. 4 - 2
FMMT614
Thermal Characteristics and Derating Information
0.6
240
15 x 15mm FR4 1oz Copper
15 x 15mm FR4 1oz Copper
0.5
200
0.4
160
D=0.5
0.3
0.2
120
80
D=0.2
Single Pulse
D=0.05
D=0.1
0.1
0.0
40
0
0
20 40 60 80 100 120 140 160
100µ 1m 10m 100m
1
10
100
1k
Temperature (°C)
Pulse Width (s)
Transient Thermal Impedance
Derating Curve
15 x 15mm FR4 1oz Copper
100
10
1
0.1
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
3 of 7
www.diodes.com
January 2016
© Diodes Incorporated
FMMT614
Document number: DS33109 Rev. 4 - 2
FMMT614
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
120
100
10
Typ
300
130
14
Max
—
Unit
V
Test Condition
IC = 10µA
—
V
IC = 10mA
IE = 10µA
VCB = 100V
VEB = 8V
—
V
—
0.02
—
10
nA
nA
µA
Emitter Cutoff Current
—
100
10
IEBO
Collector Emitter Cutoff Current
—
—
ICES
VCE = 100V
15k
5k
—
—
—
—
IC = 100mA, VCE = 5V
IC = 500mA, VCE = 5V
Static Forward Current Transfer Ratio (Note 8)
Collector-Emitter Saturation Voltage (Note 8)
—
hFE
0.9
0.78
1.0
0.9
V
V
IC = 500mA, IB = 5mA
IC = 100mA, IB = 0.1mA
—
VCE(SAT)
Base-Emitter Turn-On Voltage (Note 8)
Base-Emitter Saturation Voltage (Note 8)
Output Capacitance
—
—
—
—
—
1.5
1.7
6
1.8
1.9
—
V
V
VBE(ON)
VBE(SAT)
COBO
tON
IC = 500mA, VCE = 5V
IC = 500mA, IB = 5mA
VCB = 10V, f = 100mHz
pF
µs
µs
0.7
2.5
—
IC = 100µA, IB = 0.1mA,
VS = 10V
Switching Times
—
tOFF
Note:
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
4 of 7
www.diodes.com
January 2016
© Diodes Incorporated
FMMT614
Document number: DS33109 Rev. 4 - 2
FMMT614
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
5 of 7
www.diodes.com
January 2016
© Diodes Incorporated
FMMT614
Document number: DS33109 Rev. 4 - 2
FMMT614
Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
SOT23
All 7°
H
SOT23
GAUGE PLANE
Dim
A
B
C
D
F
G
H
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.25
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
0° 8°
–
D
All Dimensions in mm
G
F
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
SOT23
Y
Dimensions Value (in mm)
C
X
X1
Y
2.0
0.8
1.35
0.9
Y1
C
Y1
2.9
X
X1
Note:
For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance
distances between device Terminals and PCB tracking.
6 of 7
www.diodes.com
January 2016
© Diodes Incorporated
FMMT614
Document number: DS33109 Rev. 4 - 2
FMMT614
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
7 of 7
www.diodes.com
January 2016
© Diodes Incorporated
FMMT614
Document number: DS33109 Rev. 4 - 2
相关型号：
FMMT618QTA
Small Signal Bipolar Transistor, 2.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon,
DIODES
©2020 ICPDF网 联系我们和版权申明