FMMT617TA [KEXIN]
NPN Silicon Power Transistor; NPN硅功率晶体管
| 型号： | FMMT617TA |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Silicon Power Transistor |
| 文件： | 总2页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Silicon Power Transistor
FMMT617TA
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
3
■Features
● Power Dissipation: Ptot=625mW
1
2
+0.1
+0.05
0.95-0.1
0.1-0.01
● Collector Current: IC=3A
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
15
Collector-Emitter Voltage
15
V
Emitter-Base Voltage
5
V
Continuous Collector Current
Peak Pulse Current *1
3
12
A
ICM
A
Ptot
625
mW
℃
Power Dissipation at Tamb =25℃*2
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
*1. Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤2%
*2.Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
1
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SMD Type
Transistors
FMMT617TA
■Electrical Characteristics Ta = 25℃
Test conditions
Parameter
Symbol
Min
15
15
5
Typ Max
Unit
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
V(BR)CBO IC=100μA
V(BR)CEO IC=10mA*
V(BR)EBO IE=100μA
V
V
ICBO
IEBO
ICES
VCB=10V
100
100
100
nA
nA
nA
mV
mV
mV
V
Emitter Cut-Off Current
VEB=4V
Collector Emitter Cut-Off Current
VCES=10V
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=3A, IB=50mA*
IC=3A, IB=50mA*
IC=3A, VCE=2V*
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=12A, VCE =2V*
IC=50mA, VCE=10V,f=50MHz
VCB=10V, f=1MHz
VCC=10V, IC=3A
IB1=IB2=50mA
8
70
14
100
200
1.0
Collector-Emitter Saturation Voltage
VCE(sat)
150
0.9
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(sat)
VBE(om)
0.84
415
450
320
240
80
1.0
V
200
300
200
150
Static Forward Current Transfer Ratio
hFE
Transition Frequency
Output Capacitance
Turn-On Time
fT
80
120
30
MHZ
pF
Cobo
t(on)
t(off)
40
120
160
ns
Turn-Off Time
ns
*Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤2%
2
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DIODES
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