FMMT614 [TYSEMI]

hFE up to 5k at IC= 500mA, Fast switching; 的hFE高达5K的IC = 500毫安，快速切换

FMMT614


型号：	FMMT614
厂家：	TY Semiconductor Co., Ltd
描述：	hFE up to 5k at IC= 500mA, Fast switching 的hFE高达5K的IC = 500毫安，快速切换晶体晶体管开关光电二极管
文件：	总2页 (文件大小：565K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

S

SMD Type

M

D

T

y

p

e

TTrraannssiissttIIooCCrrs

Product specification

FMMT614

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

3

Features

1

2

h^FEup to 5k at I^C= 500mA

Fast switching

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

Low V^CE(sat)at High I^C

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

120

V

V

100

10

500

V

Collector current

mA

A

Peak collector current

I^CM

2

Power dissipation

P^tot

500

mW

Operating and storage temperature range

T^j,T^stg

-55 to +150

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S

SMD Type

M

D

T

y

p

e

TTrraannssiissttIIooCCrrs

Product specification

FMMT614

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)CBO

V^(BR)CEO

V^(BR)EBO

I^CBO

Testconditons

Min

Typ

Max

Unit

V

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector cutoff current

120 300

I^C=10ìA

I^C=10mA

I^E=10ìA

100

10

130

10

V

V

0.02

10

10

nA

ìA

nA

V^CB=100V,I^E=0

V^CE=100V,I^E=0

VEB=8V

Collector cutoff current

I^CES

Emitter cut-off current

IEBO

100

0.9

1.0

0.9

I^C=500mA,I^B=5mA

Collector-emitter saturation voltage *

V^CE(sat)

V

0.78

I^C=100mA,I^B=0.1mA

Base-emitter saturation voltage *

Base-emitter voltage *

V^BE(sat)

V^BE(ON)

1.7

1.5

1.9

1.8

V

V

I^C=500mA,I^B=5mA

I^C=500mA,V^CE=5V

I^C=100mA,V^CE=5V

I^C=500mA,VCE=5V

15K

5K

DC current gain *

Output capacitance

Switching times

h^FE

C^obo

ton

6

pF

ìs

ìs

V^CB=10V,f=100MHz

I^C=100ìA, V^S=10V

0.7

2.5

toff

I^B=0.1mA

* Pulse test: tp = 300 ìs; d

0.02.

Marking

Marking

614

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