DMP10H4D2S_17 [DIODES]
100V P-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMP10H4D2S_17 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 100V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：538K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP10H4D2S
100V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low Gate Threshold Voltage
ID
Low Input Capacitance
BVDSS
RDS(ON)
TA = +25°C
Fast Switching Speed
-0.27A
-0.24A
4.2Ω @ VGS = -10V
5.0Ω @ VGS = -4.0V
Small Surface Mount Package
-100V
ESD Protected up to 2KV (HBM)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON) and yet maintain superior switching
)
Mechanical Data
performance, making it ideal for high-efficiency power management
applications.
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Applications
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Weight: 0.008 grams (Approximate)
D
SOT23
D
G
S
G
ESD protected up to 2kV
Gate Protection
Diode
S
Top View
Pin Configuration
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP10H4D2S-7
DMP10H4D2S-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
P10 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
P10
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
Code
C
D
E
F
G
H
I
J
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMP10H4D2S
Document number: DS37891 Rev. 3 - 2
DMP10H4D2S
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-100
±20
Unit
V
Gate-Source Voltage
V
VGSS
Steady
State
TA = +25°C
TA = +70°C
-0.27
-0.21
A
Continuous Drain Current (Note 6) VGS = -10V
ID
-1.0
A
A
Pulsed Drain Current (10μs Pulse, Duty Cycle 1%)
Maximum Body Diode Continuous Current (Note 6)
IDM
IS
-0.42
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
(Note 5)
0.38
0.44
Total Power Dissipation
(Note 6)
W
PD
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 6)
333
RθJA
RθJA
Steady
State
282
°C/W
°C
115
RθJC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
-100
V
BVDSS
IDSS
1
VGS = 0V, ID = -250µA
µA
μA
VDS = -100V, VGS = 0V
VGS = ±20V, VDS = 0V
±10
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-1.0
-2.3
2.8
-3.0
4.2
V
Ω
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = -250µA
VGS = -10V, ID = -0.5A
VGS = -4.0V, ID = -0.1A
VGS = 0V, IS = -0.2A
Static Drain-Source On-Resistance
3.2
5.0
Diode Forward Voltage
-0.82
-1.3
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
87
5.6
2.9
Ciss
Coss
Crss
RG
VDS = -25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
15.3
1.8
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge
Qg
VDS = -80V, VGS = -10V,
ID = -0.5A
0.3
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
nC
Qgs
Qgd
tD(ON)
tR
0.5
3.3
2.6
VDS = -50V, ID = -0.5A,
VGS = -10V, RG = 10Ω
ns
8.4
tD(OFF)
tF
4.9
17.8
24.8
Reverse Recovery Time
Reverse Recovery Charge
ns
tRR
VR = -100V, IF = -1.0A,
di/dt = 100A/µs
nC
QRR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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© Diodes Incorporated
DMP10H4D2S
Document number: DS37891 Rev. 3 - 2
DMP10H4D2S
0.6
0.5
0.4
0.3
0.2
0.1
0
1.0
0.8
0.6
0.4
0.2
0.0
VDS= -5V
VGS=-4.5V
VGS=-4.0V
VGS=-10V
85℃
VGS=-3.5V
125℃
25℃
150℃
VGS=-2.8V
VGS=-3.0V
4
-55℃
0
1
2
3
5
1.5
2
2.5
3
3.5
4
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
Figure 1. Typical Output Characteristic
10
8
5
4.5
4
VGS=-4V
6
3.5
3
4
VGS=-10V
ID=-500mA
ID=-100mA
2
2.5
2
0
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
8
7
6
5
4
3
2
1
0
2
1.8
1.6
1.4
1.2
1
VGS=-10V
VGS=-10V, ID=-500mA
150℃
125℃
85℃
25℃
VGS=-4.0V, ID=-100mA
-55℃
0.8
0.6
0
0.2
0.4
0.6
0.8
1
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
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DMP10H4D2S
Document number: DS37891 Rev. 3 - 2
DMP10H4D2S
7
6
5
4
3
2
1
2.8
2.6
2.4
2.2
2
ID=-1mA
VGS=-4.0V, ID=-100mA
ID=-250μA
VGS=-10V, ID=-500mA
1.8
1.6
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
Figure 7. On-Resistance Variation with Junction
Temperature
1
0.8
0.6
0.4
0.2
0
1000
f=1MHz
Ciss
VGS=0V, TJ=85℃
VGS=0V, TJ=125℃
100
10
1
Coss
VGS=0V, TJ=150℃
VGS=0V, TJ=25℃
VGS=0V, TJ=-55℃
Crss
0
5
10
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
10
1
10
8
RDS(ON) Limited
PW=1ms
PW=10ms
PW=100μs
6
VDS=-80V, ID=-0.5A
0.1
PW=100ms
PW=1s
4
TJ(MAX)=150℃
TC=25℃
VGS=10V
Single Pulse
DUT on 1*MRP Board
0.01
0.001
2
PW=10s
DC
0
0.1
1
10
100
1000
0
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
Figure 12. SOA, Safe Operation Area
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© Diodes Incorporated
DMP10H4D2S
Document number: DS37891 Rev. 3 - 2
DMP10H4D2S
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
0.001
D=0.005
RθJA(t)=r(t) * RθJA
RθJA=336℃/W
Duty Cycle, D=t1 / t2
D=Single Pulse
1E-06
1E-05 0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
All 7°
H
SOT23
GAUGE PLANE
0.25
Dim
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
J
A
B
C
D
F
G
H
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
0° 8° --
D
All Dimensions in mm
G
F
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© Diodes Incorporated
DMP10H4D2S
Document number: DS37891 Rev. 3 - 2
DMP10H4D2S
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Y
Dimensions Value (in mm)
C
X
2.0
0.8
Y1
C
X1
Y
1.35
0.9
Y1
2.9
X
X1
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
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© Diodes Incorporated
DMP10H4D2S
Document number: DS37891 Rev. 3 - 2
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