DMP2003UPS-13 [DIODES]
Power Field-Effect Transistor,;
| 型号： | DMP2003UPS-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：523K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP2003UPS
Green
20V P-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
ID
BVDSS
RDS(ON)
TC = +25°C
Low RDS(ON) – Minimizes On State Losses
-150A
-120A
-90A
2.2mΩ @ VGS = -10V
2.55mΩ @ VGS = -4.5V
4.0mΩ @ VGS = -2.5V
<1.1mm Package Profile – Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
-20V
Description
Mechanical Data
This new generation MOSFET is designed to minimize RDS(ON) and
yet maintain superior switching performance. This device is ideal for
use in notebook battery power management and load switch.
®
Case: PowerDI 5060-8
Case Material: Molded Plastic, ―Green‖ Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Applications
Switch
PowerDI5060-8
D
S
S
D
D
D
D
Pin1
G
S
G
S
Top View
Pin Configuration
Bottom View
Internal Schematic
Top View
Ordering Information (Note 4)
Part Number
DMP2003UPS-13
Case
PowerDI5060-8
Packaging
2,500 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
PowerDI5060-8
D D
D
D
=Manufacturer’s Marking
P2003US = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 17 = 2017)
WW = Week Code (01 to 53)
P2003US
YY WW
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
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October 2017
© Diodes Incorporated
DMP2003UPS
Document number: DS39597 Rev. 2 - 2
DMP2003UPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-20
Unit
V
Gate-Source Voltage
±12
V
VGSS
TC = +25°C
TC = +70°C
-150
-120
A
ID
Continuous Drain Current, VGS = -10V (Note 7)
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH (Note 8)
-350
-120
-350
-32
A
A
IDM
IS
A
ISM
IAS
EAS
A
Avalanche Energy, L = 0.1mH (Note 8)
67
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
PD
R
Value
1.4
Unit
W
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
90
°C/W
W
JA
2.7
PD
R
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
46
80
°C/W
W
JA
PD
R
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
1.5
°C/W
°C
JC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
—
—
—
—
—
-1
V
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -16V, VGS = 0V
VGS = 12V, VDS = 0V
µA
nA
—
±100
IGSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
-0.5
—
—
1.7
1.9
2.5
-0.6
-1.4
2.2
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = -250µA
VGS = -10V, ID = -25A
VGS = -4.5V, ID = -20A
VGS = -2.5V, ID = -15A
VGS = 0V, IS = -5A
Static Drain-Source On-Resistance
—
2.55
4.0
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
—
-1.1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8352
1406
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = -10V, VGS = 0V
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
599
13.2
VDS = 0V, VGS = 0V, f = 1MHz
79
177
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Qg
Qg
VDS = -10V, ID = -20A
14.3
19.8
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
Turn-On Delay Time
7.8
4.9
Turn-On Rise Time
VDD = -10V, VGEN = -4.5V,
RGEN = 1Ω, ID = -10A
Turn-Off Delay Time
377
189
tD(OFF)
tF
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
49
39
tRR
IF = -10A, di/dt = 100A/µs
QRR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMP2003UPS
Document number: DS39597 Rev. 2 - 2
DMP2003UPS
30
25
20
15
10
5
50.0
40.0
30.0
20.0
10.0
0.0
VGS = -10V
VDS= -5V
VGS = -4.5V
VGS = -4.0V
VGS = -3.5V
VGS = -3.0V
VGS = -2.5V
VGS = -2.0V
TJ= 85℃
TJ= 25℃
VGS = -1.8V
VGS = -1.5V
TJ= 150℃
TJ= 125℃
VGS = -1.3V
TJ=-55℃
0
0
0.5
1
1.5
2
2.5
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1.Typical Output Characteristic
0.01
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
0.004
0.0035
0.003
0.0025
0.002
0.0015
0.001
0.0005
0
ID = -15A
ID = -20A
ID = -25A
VGS = -2.5V
VGS = -4.5V
VGS = -10V
0
2
4
6
8
10
12
0
5
10 15 20 25 30 35 40 45 50
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
0.004
VGS= -10V
VGS = -10V, ID = -25A
VGS = -4.5V, ID = -20A
0.003
0.002
0.001
0
TJ= 150℃
TJ= 125℃
TJ= 85℃
TJ= 25℃
VGS = -2.5V, ID = -15A
TJ= -55℃
-50 -25
0
25
50
75 100 125 150
0
5
10
15
20
25
30
TJ, JUNCTION TEMPERATURE (℃)
ID, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Junction
Temperature
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
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© Diodes Incorporated
DMP2003UPS
Document number: DS39597 Rev. 2 - 2
DMP2003UPS
0.005
0.004
0.003
0.002
0.001
0
1.2
1
0.8
0.6
0.4
0.2
0
VGS = -2.5V, ID = -15A
ID = -1mA
ID = -250μA
VGS = -10V, ID = -25A
VGS = -4.5V, ID = -20A
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
30
25
20
15
10
5
100000
10000
1000
f=1MHz
VGS = 0V
Ciss
Coss
Crss
TJ= 85℃
TJ= 150℃
TJ= 25℃
TJ= 125℃
TJ= -55℃
100
0
0
2
4
6
8
10 12 14 16 18 20
0
0.3
0.6
0.9
1.2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1000
100
10
10
9
8
7
6
5
4
3
2
1
0
RDS(ON) LIMITED
PW=1µs
PW=10µs
PW=100µs
VDS = -10V, ID = -20A
PW=1ms
TJ(MAX)=150℃
TC=25℃
Single Pulse
DUT on infinite
heatsink
PW=10ms
PW=100ms
PW=1s
VGS= -10V
1
0.1
1
10
100
0
20 40 60 80 100 120 140 160 180 200
Qg (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
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© Diodes Incorporated
DMP2003UPS
Document number: DS39597 Rev. 2 - 2
DMP2003UPS
1
D=0.9
D=0.7
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
0.001
D=0.01
D=0.005
RθJC(t) = r(t) * RθJC
RθJC= 1.5℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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© Diodes Incorporated
DMP2003UPS
Document number: DS39597 Rev. 2 - 2
DMP2003UPS
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8
D
Detail A
D1
PowerDI5060-8
Dim Min Max Typ
0.90 1.10 1.00
0.00 0.05
0.33 0.51 0.41
O (4X)
A
A1
b
c
A1
b2 0.200 0.350 0.273
b3
c
D
0.40 0.80 0.60
0.230 0.330 0.277
5.15 BSC
E1 E
e
D1
D2
D3
E
4.70 5.10 4.90
3.70 4.10 3.90
3.90 4.30 4.10
6.15 BSC
O (4X)
1
E1
E2
E3
e
G
K
5.60 6.00 5.80
3.28 3.68 3.48
3.99 4.39 4.19
1.27 BSC
b (8X)
L
e/2
1
b2 (4X)
0.51 0.71 0.61
D3
K
0.51
0.51 0.71 0.61
L
L1 0.100 0.200 0.175
A
D2
b3 (4X)
M
M1
Θ
3.235 4.035 3.635
1.00 1.40 1.21
E3
E2
M
10°
6°
12°
8°
11°
7°
M1
Θ1
Detail A
All Dimensions in mm
G
L1
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8
X4
X3
Y2
Y1
Dimensions
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
C
G
G1
X
Y3
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y( 4x)
X
G
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© Diodes Incorporated
DMP2003UPS
Document number: DS39597 Rev. 2 - 2
DMP2003UPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
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© Diodes Incorporated
DMP2003UPS
Document number: DS39597 Rev. 2 - 2
相关型号：
DMP2004KQ-7
Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
DIODES
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