DMP2004DMK [DIODES]
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; 双P沟道增强型场效应晶体管
| 型号： | DMP2004DMK |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总4页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP2004DMK
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
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Dual P-Channel MOSFET
Low On-Resistance
•
•
Case: SOT-26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.015 grams (approximate)
Very Low Gate Threshold Voltage VGS(th) < 1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Gate
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•
•
•
•
•
"Green" Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
G1
S1
D2
SOT-26
ESD PROTECTED
TOP VIEW
G2
S2
D1
TOP VIEW
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
VGSS
ID
Value
-20
Units
V
Gate-Source Voltage
±8
V
Drain Current (Note 1)
-550
-1.9
mA
A
Pulsed Drain Current
IDM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Symbol
Pd
Rθ
Value
500
Units
mW
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
250
°C/W
JA
-55 to +150
°C
Tj, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
-20
⎯
⎯
V
BVDSS
⎯
⎯
⎯
⎯
-1.0
VGS = 0V, ID = -250mA
VDS = -20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
μA
μA
IDSS
Gate-Source Leakage
IGSS
±1.0
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
-0.5
-1.0
V
VGS(th)
⎯
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -430mA
VGS = -2.5V, ID = -300mA
0.7
1.1
1.7
0.9
1.4
2.0
Static Drain-Source On-Resistance
RDS (ON)
⎯
Ω
V
GS = -1.8V, ID = -150mA
VDS =10V, ID = -0.2A
GS = 0V, IS = 115mA
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
200
-0.5
mS
V
|Yfs|
VBSD
⎯
⎯
⎯
-1.2
V
175
30
20
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
VDS = -16V, VGS = 0V
f = 1.0MHz
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
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November 2007
© Diodes Incorporated
DMP2004DMK
Document number: DS30939 Rev. 3 - 2
DMP2004DMK
0
0
-VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
-VDS, DRAIN SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
TA, AMBIENT TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
10
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs.
Drain Current
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 6 Static Drain-Source On-Resistance vs.
Drain-Source Current vs. Gate Source Voltage
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November 2007
© Diodes Incorporated
DMP2004DMK
Document number: DS30939 Rev. 3 - 2
DMP2004DMK
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Ambient Temperature
-VDS, DRAIN-SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Fig. 10 Typical Capacitance
Fig. 9 Forward Transfer Admittance vs. Drain Current
Ordering Information (Note 5)
Part Number
Case
Packaging
DMP2004DMK-7
SOT-26
3000/Tape & Reel
Notes:
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
G1
S1
D2
PAB = Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September
PAB YM
S2
G2
D1
Date Code Key
Year
2007
2008
2009
2010
2011
2012
Code
U
V
W
X
Y
Z
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
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November 2007
© Diodes Incorporated
DMP2004DMK
Document number: DS30939 Rev. 3 - 2
DMP2004DMK
Package Outline Dimensions
A
SOT-26
Dim Min Max Typ
TOP VIEW
B C
A
B
C
D
F
0.35 0.50 0.38
1.50 1.70 1.60
2.70 3.00 2.80
0.95
0.55
⎯
⎯
⎯
⎯
H
H
J
K
L
M
α
2.90 3.10 3.00
0.013 0.10 0.05
1.00 1.30 1.10
0.35 0.55 0.40
0.10 0.20 0.15
K
J
M
L
D
F
0°
8°
⎯
All Dimensions in mm
Suggested Pad Layout
E
E
Dimensions Value (in mm)
Z
G
X
Y
C
E
3.20
1.60
0.55
0.80
2.40
0.95
C
G
Z
Y
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
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www.diodes.com
November 2007
© Diodes Incorporated
DMP2004DMK
Document number: DS30939 Rev. 3 - 2
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DIODES
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