DMP2002UPS-13 [DIODES]
Power Field-Effect Transistor, 60A I(D), 20V, 0.0019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,;
| 型号： | DMP2002UPS-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, 60A I(D), 20V, 0.0019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：344K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP2002UPS
Green
20V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
Features
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
ID
BVDSS
RDS(ON)
TC = +25°C
Low RDS(ON) – Minimizes On State Losses
-60A
-60A
-60A
1.9mΩ @ VGS = -10V
2.4mΩ @ VGS = -4.5V
3.8mΩ @ VGS = -2.5V
<1.1mm Package Profile – Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
-20V
Description
Mechanical Data
This new generation P-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON) and yet maintain superior switching
performance. This device is ideal for use in notebook battery power
management and load switch.
Case: PowerDI5060-8 (Type K)
Case Material: Molded Plastic, ―Green‖ Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Applications
Switch
D
PowerDI5060-8 (Type K)
S
S
D
D
D
D
G
S
G
S
Pin1
Top View
Pin Configuration
Bottom View
Internal Schematic
Top View
Ordering Information (Note 4)
Part Number
DMP2002UPS-13
Case
PowerDI5060-8 (Type K)
Packaging
2,500 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
PowerDI5060-8 (Type K)
D
D
D
D
= Manufacturer’s Marking
P2002US = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
P2002US
YY WW
S
S
S
G
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DMP2002UPS
Document number: DS37192 Rev. 5 - 2
DMP2002UPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
Units
-20
V
V
Gate-Source Voltage
±12
VGSS
Steady State
(Note 8)
TC = +25°C
TC = +70°C
TA = +25°C
TA = +70°C
-60
-60
A
Continuous Drain Current, VGS = -10V (Note 5)
ID
-42
-33.5
t<10s
A
A
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
-100
-60
IDM
IS
Steady State
(Note 8)
TC = +25°C
TA = +25°C
Continuous Body Diode Forward Current (Note 5)
t<10s
-5.6
-100
-37
A
A
Pulsed Body Diode Forward Current (10μs pulse, duty cycle = 1%)
Avalanche Current, L = 0.1mH
ISM
IAS
A
Avalanche Energy, L = 0.1mH
69.8
mJ
EAS
Thermal Characteristics
Characteristic
Symbol
Value
2.3
Units
Steady State
t<10s
Total Power Dissipation (Note 5)
W
PD
6.25
Steady State
t<10s
55
Thermal Resistance, Junction to Ambient (Note 5)
°C/W
RθJA
20
Total Power Dissipation (Note 5)
Steady State
104
W
°C/W
°C
PD
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
0.9
RθJC
-55 to +150
TJ, TSTG
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DMP2002UPS
Document number: DS37192 Rev. 5 - 2
DMP2002UPS
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
—
—
—
—
—
-1
V
BVDSS
IDSS
VGS = 0V, ID = -250µA
µA
nA
VDS = -20V, VGS = 0V
—
±100
IGSS
VGS = 12V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
-0.5
—
—
1.3
1.5
2
-1.4
1.9
2.4
3.8
V
VGS(TH)
VDS = VGS, ID = -250µA
VGS = -10V, ID = -25A
VGS = -4.5V, ID = -20A
VGS = -2.5V, ID = -15A
Static Drain-Source On-Resistance
—
RDS(ON)
m
—
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
—
—
—
0.9
—
—
—
—
—
—
—
—
12826
2547
1924
4.2
—
—
Ciss
Coss
Crss
RG
VDS = -10V, VGS = 0V
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
—
6.6
585
282
—
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -10V, ID = -20A
476
Total Gate Charge (VGS = -10V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Qg
228
Qg
nC
24.8
61.9
14.2
35.4
361
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
—
Turn-On Delay Time
28
Turn-On Rise Time
70
VDD = -10V, VGEN = -4.5V,
RGEN = 1Ω, ID = -10A
ns
Turn-Off Delay Time
578
358
tD(OFF)
tF
Turn-Off Fall Time
224
BODY DIODE CHARACTERISTICS
Continuous Body Diode Forward Current (Notes 5 & 8)
Diode Forward Voltage
—
—
—
—
—
—
—
-0.58
137
221
39
-60
-1.1
219
332
—
A
V
IS
VSD
tRR
QRR
tA
TC = +25°C
VGS = 0V, IS = -5A
Reverse Recovery Time (Note 7)
Reverse Recovery Charge (Note 7)
(Note 7)
ns
nC
IF = -10A, di/dt = 100A/µs
ns
(Note 7)
98
—
tB
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
8. Package limited.
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DMP2002UPS
Document number: DS37192 Rev. 5 - 2
DMP2002UPS
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
VGS = -4.5V
VDS = -5V
VGS = -1.4V
VGS = -2.0V
VGS = -1.5V
150oC
VGS = -1.3V
125oC
85oC
25oC
VGS = -1.2V
-55oC
0.0
0
0
0.5
1
1.5
2
2.5
3
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.01
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
0.0024
0.0022
0.002
VGS = -2.5V
0.0018
0.0016
0.0014
VGS = -4.5V
VGS = -10V
ID = -25A
ID = -20A
ID = -15A
2
6
10
14
18
22
26
30
0
2
4
6
8
10
12
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. Typical Transfer Characteristic
0.0024
0.0022
0.002
1.6
VGS = -4.5V
150oC
VGS = -2.5V, ID = -15A
VGS = -4.5V, ID = -20A
1.4
1.2
1
125oC
85oC
0.0018
0.0016
0.0014
0.0012
0.001
VGS = -10V, ID = -25A
25oC
0.8
0.6
-55oC
-50 -25
0
25
50
75 100 125 150
0
5
10
15
20
25
30
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with
Temperature
ID, DRAIN CURRENT(A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
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DMP2002UPS
Document number: DS37192 Rev. 5 - 2
DMP2002UPS
1
0.8
0.6
0.4
0.2
0
0.0034
0.003
VGS = -2.5V, ID = -15A
0.0026
0.0022
0.0018
0.0014
0.001
ID = -1mA
ID = -250µA
VGS = -10V, ID = -25A
VGS = -4.5V, ID = -20A
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Ambient
Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
30
25
20
15
10
5
100000
f = 1MHz
VGS = 0V
Ciss
TA = 150oC
10000
TA = 125oC
TA = 85oC
Coss
TA = 25oC
Crss
TA = -55oC
0.8
0
1000
1000
0
0.2
0.4
0.6
1
0
4
8
12
16
20
VDS, DRAIN-SOURCE VOLTAGE (V)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Typical Junction Capacitance
10
8
RDS(ON)
Limited
100
10
1
PW = 1s
6
VDS = -10V, ID = -20A
PW = 100ms
PW = 10ms
PW = 1ms
4
PW = 100µs
TJ(Max) = 150℃
TC = 25℃
VGS = -10V
Single Pulse
2
PW = 10µs
PW = 1µs
DUT on Infinite Heatsink
0
0.1
1
10
100
0
50 100 150 200 250 300 350 400 450 500
Qg (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
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DMP2002UPS
Document number: DS37192 Rev. 5 - 2
DMP2002UPS
1
D = 0.9
D = 0.5
D = 0.3
D = 0.7
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
RθJC(t) = r(t) * RθJC
RθJC = 0.9oC/W
Duty Cycle, D = t1/t2
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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DMP2002UPS
Document number: DS37192 Rev. 5 - 2
DMP2002UPS
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8 (Type K)
D
D1
PowerDI5060-8
(Type K)
Min Max
0( 4x)
A1
Dim
Typ
A
A1
b
b1
b2
c
0.90
0
0.33
1.10 1.00
0.05 0.02
0.51 0.41
c
x
E1
E
0.300 0.366 0.333
Seating Plane
y
0.20
0.23
0.35 0.25
0.33 0.277
e
C
D
5.15 BSC
4.95 4.90
D1
D2
E
4.85
-
1
-
3.98
01( 4x)
Ø 1.000 Depth 0.07± 0.030
6.15 BSC
E1
E2
E
5.75
5.85 5.80
b1( 8x)
DETAIL A
3.56 3.725 3.66
1.27BSC
b( 8x)
e/2
k
-
-
1.27
1
L
L
0.51
0.71 0.61
La
L1
L4
M
x
y
θ
θ1
0.51 0.675 0.61
D2
k
b2( 2x)
0.05
0.20 0.175
0.125
3.71 3.605
-
3.50
-
-
L4
-
-
1.400
1.900
11°
E2
A
M
-
10°
6°
12°
8°
7°
DETAIL A
All Dimensions in mm
La
L1
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8 (Type K)
Value
Dimensions
X2
(in mm)
1.270
0.660
0.820
0.610
3.910
4.420
1.270
1.020
3.810
6.610
C
G
G1
X
X1
X2
Y
Y1
Y2
Y3
Y1
Y2
Y3
X1
G1
X ( 8x)
C
G
Y
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DMP2002UPS
Document number: DS37192 Rev. 5 - 2
DMP2002UPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
PowerDI is a registered trademark of Diodes Incorporated.
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© Diodes Incorporated
DMP2002UPS
Document number: DS37192 Rev. 5 - 2
相关型号：
DMP2004KQ-7
Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
DIODES
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