DMP1245UFCL-7 [DIODES]
12V P-CHANNEL ENHANCEMENT MODE MOSFET; 12V P沟道增强型MOSFET
| 型号： | DMP1245UFCL-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 12V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
DMP1245UFCL
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Summary
Features and Benefits
•
Typical off board profile of 0.5mm - ideally suited for thin
applications
V(BR)DSS
RDS(on) max
ID max
-6.6 A
-5.3 A
-4.6 A
-3.5 A
•
•
•
Low RDS(ON) – minimizes conduction losses
PCB footprint of 2.56mm2
3kV ESD Protected Gate – protected against human borne
ESD
“Lead-Free”, RoHS Compliant (Note 1)
"Green" Device (Note 2)
29mΩ @VGS = -4.5V
45mΩ @VGS = -2.5V
60mΩ @VGS = -1.8V
100mΩ @VGS = -1.5V
-12V
•
•
Mechanical Data
Application
•
•
Case: X1-DFN1616-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
This device provides a high performance, low RDS(ON) P channel
MOSFETs in the thermally and space efficient X1-DFN1616-6
package. The low RDS(ON) of this MOSFET ensures conduction
losses are kept making it ideal for use as a:
•
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Lead Free Plating (NiPdAu Finish over Copper leadframe).
Terminals: Solderable per MIL-STD-202, Method 208
Weight: 0.04 grams (approximate)
•
•
Battery disconnect switch
Load switch for power management functions
Drain
X1-DFN1616-6
Type E
Pin 1
Gate
Gate
Protection
Diode
Source
Top View
Top View
Bottom View
Device symbol
Pin-Out
Ordering Information (Note 3)
Product
DMP1245UFCL-7
Marking
P5
Reel size (inches)
Tape width (mm)
Quantity per reel
7
8
3,000
Notes:
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
P5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
P5
YM
M = Month (ex: 9 = September)
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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November 2011
© Diodes Incorporated
DMP1245UFCL
Document number: DS35505 Rev. 1 - 2
A Product Line of
Diodes Incorporated
DMP1245UFCL
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-12
Units
V
V
Gate-Source Voltage
±8
VGSS
Continuous Drain Current (Note 5)
@TA = 25°C
@TA = 70°C
-6.6
-5.25
A
A
ID
-16.67
Pulsed Drain Current
TP = 10μs
IDM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
613
1.7
Units
mW
W
(Note 4)
Total Power Dissipation
(Note 5)
PD
(Note 4)
Thermal Resistance, Junction to Ambient
(Note 5)
Operating and Storage Temperature Range
204
74
-55 to +150
°C/W
°C
Rθ
JA
TJ, TSTG
Notes:
4. For a device surface mounted on minimum recommended pad layout, in still air conditions; the device is measured when operating in a steady state
condition.
5. For a device surface mounted on 25mm by 25mm by 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady state condition.
Thermal Characteristics
100
90
100
R
I
(A) @
=10µs
DS(ON)
D
Single Pulse
Limited
P
R
=205°C/W
W
θJA
R
(t)=R *r(t)
θJA
θ
JA
D
T -T =P*R (t)
80
J
A
θJA
W
10
1
D
70
60
50
40
30
20
W
I
(A) @ DC
D
I
(A) @P =10s
W
D
I
(A) @P =1s
W
D
I
(A) @P =100ms
D
W
0.1
I
(A) @P =10ms
W
D
T
= 150
°
C
J(MAX)
T
= 25°C
10
0
A
Single Pulse
0.01
0.1
1
10
100
0.0001 0.001 0.01
0.1
1
10
100 1000
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
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November 2011
© Diodes Incorporated
DMP1245UFCL
Document number: DS35505 Rev. 1 - 2
A Product Line of
Diodes Incorporated
DMP1245UFCL
1
0.1
0.01
R
R
(t)=r(t) * R
θJA
= 205°C/W
θ
JA
θJA
Duty Cycle, D=t1/ t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIMES (sec)
Fig. 03 Transient Thermal Resistance
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-12
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
-1
VGS = 0V, ID = -250µA
VDS = -12.0V, VGS = 0V
µA
µA
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
IGSS
±10
VGS = ±8.0V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
-0.3
⎯
⎯
⎯
⎯
0.4
-
-0.6
25
31
40
60
3
-0.95
29
V
VGS(th)
VDS = VGS, ID = -250µA
GS = -4.5V, ID = - 4A
V
45
VGS = -2.5V, ID = - 3.5A
VGS = -1.8V, ID = - 1A
VGS = -1.5 V, ID = - 0.5A
VDS = -5V, ID = -2A
Static Drain-Source On-Resistance
mΩ
RDS (ON)
60
100
-
Forward Transfer Admittance
Diode Forward Voltage
S
V
|Yfs|
VSD
-
-1.0
VGS = 0V, ID = -2A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
-
-
-
-
-
-
-
-
-
-
-
-
1357.4
499
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = -10V, VGS = 0V
f = 1.0MHz
Output Capacitance
273.6
14.26
16.1
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -4.5V
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge
Qg
26.1
1.71
I
D = -1A,
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qgs
Qgd
tD(on)
tr
VDS = -10V
VGS = -8V
20.48
15.2
33.11
219.4
217.64
V
GS = -2.5V, VDS = -10V
ID = -180mA, RG = 2.0ꢀ,
tD(off)
tf
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
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November 2011
© Diodes Incorporated
DMP1245UFCL
Document number: DS35505 Rev. 1 - 2
A Product Line of
Diodes Incorporated
DMP1245UFCL
20
16
20
16
V
= 1.8V
GS
V
= 2.0V
GS
V
= 2.5V
GS
V
= 1.5V
GS
12
8
12
V
= 4.5V
GS
8
4
0
V
= 1.2V
GS
V
= 8.0V
GS
4
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 5 Typical Transfer Characteristic
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Output Characteristics
0.06
0.05
0.04
0.06
0.04
V
= 4.5V
GS
V
= -1.5V
GS
T
A
= 150°C
V
= -1.8V
GS
T
= 125°C
A
V
= -2.5V
GS
0.03
0.02
V
= -3.5V
T
= 85°C
GS
T = 25°C
A
V
= -4.5V
A
GS
0.02
T
= -55°C
A
0.01
0
0
0
0
4
8
12
16
20
4
8
12
ID, DRAIN CURRENT (A)
Fig. 7 Typical On-Resistance
vs. Drain Current and Temperature
16
20
ID, DRAIN-SOURCE CURRENT (A)
Fig. 6 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.7
1.5
0.06
0.05
V
I
= -2.5V
V
= -2.5V
GS
GS
= -5A
I
= -5A
D
D
1.3
1.1
0.9
0.04
0.03
0.02
V
= -4.5V
GS
V
I
= -4.5V
I
= -10A
GS
D
= -10A
D
0.7
0.5
0.01
0
-50 -25
0
25
50
75 100 125 150
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 9 On-Resistance Variation with Temperature
November 2011
4 of 7
DMP1245UFCL
© Diodes Incorporated
www.diodes.com
Document number: DS35505 Rev. 1 - 2
A Product Line of
Diodes Incorporated
DMP1245UFCL
1.4
1.2
20
16
1.0
0.8
0.6
0.4
0.2
12
T
= 25°C
A
8
4
0
I
= -1mA
D
I
= -250µA
D
0
0.4
0.6
0.8
1
1.2
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
50
75 100 125 150
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
100,000
2,500
2,000
T
= 150°C
T
A
= 125°C
A
10,000
C
ISS
T
= 85°C
A
1,000
1,500
1,000
100
10
1
T
= 25°C
A
C
OSS
500
0
C
RSS
0
2
4
6
8
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Drain-Source Leakage Current vs. Voltage
12
0
4
8
12
16
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Junction Capacitance
8
6
4
2
V
= -10V
= -1A
DS
I
D
0
0
5
10
15
20
25
30
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics
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November 2011
© Diodes Incorporated
DMP1245UFCL
Document number: DS35505 Rev. 1 - 2
A Product Line of
Diodes Incorporated
DMP1245UFCL
Package Outline Dimensions
X1-DFN1616-6
A3
A1
Type E
Dim
A
Min Max Typ
0.47 0.53 0.50
A
A1
A3
b
0
0.05 0.02
0.13
D
—
—
D2
0.20 0.30 0.25
0.10 0.30 0.20
1.55 1.65 1.60
0.57 0.77 0.67
1.55 1.65 1.60
1.30 1.50 1.40
b1
D
b1
L1
D2
E
E
E2
E2
e
—
—
0.50
L(2X)
L
0.25 0.35 0.30
0.52 0.72 0.62
L1
Z
e
—
—
0.175
Z(4X)
b(6X)
All Dimensions in mm
Suggested Pad Layout
X3
Y (2x)
Value
Dimensions
(in mm)
0.500
0.300
0.200
0.720
0.400
0.475
0.620
1.900
C
X
X1
X2
X3
Y
Y1
Y2
X2
X1
Y1
Y2
X (6x)
C
6 of 7
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November 2011
© Diodes Incorporated
DMP1245UFCL
Document number: DS35505 Rev. 1 - 2
A Product Line of
Diodes Incorporated
DMP1245UFCL
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
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November 2011
© Diodes Incorporated
DMP1245UFCL
Document number: DS35505 Rev. 1 - 2
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