DMN3033LSN-7 [DIODES]
N-CHANNEL ENHANCEMENT MODE MOSFET; N沟道增强型MOSFET
| 型号： | DMN3033LSN-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总5页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3033LSN
N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
•
•
Low Gate Charge
Low RDS(ON)
•
•
Case: SC-59
:
Case Material - Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
•
•
30 mΩ @VGS = 10V
40 mΩ @VGS = 4.5V
•
•
•
•
•
•
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Note 4)
•
•
•
•
Drain
D
SC-59
Gate
S
G
Source
Top View
Equivalent Circuit
Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
V
VGSS
±20
Drain Current (Note 1) Continuous
TA = 25°C
TA = 70°C
6
5
A
ID
Pulsed Drain Current (Note 2)
24
A
A
IDM
IS
Body-Diode Continuous Current (Note 1)
2.25
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Symbol
PD
Rθ
Value
1.4
Unit
W
Thermal Resistance, Junction to Ambient (Note 1) t ≤10s
90
°C /W
°C
JA
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Notes:
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
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January 2010
© Diodes Incorporated
DMN3033LSN
Document number: DS31116 Rev. 5 - 2
DMN3033LSN
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
STATIC PARAMETERS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
30
V
BVDSS
IDSS
⎯
⎯
1
5
ID = 250μA, VGS = 0V
VDS = 30V, VGS = 0V
DS = 0V, VGS = ±20V
TJ = 25°C
TJ = 55°C
⎯
⎯
μA
Gate-Body Leakage Current
Gate Threshold Voltage
nA
V
IGSS
⎯
1.0
⎯
⎯
±100
2.1
V
VGS(th)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 6A
25
36
30
40
Static Drain-Source On-Resistance (Note 5)
RDS (ON)
⎯
mΩ
V
GS = 4.5V, ID = 5A
Forward Transconductance (Note 5)
Diode Forward Voltage (Note 5)
DYNAMIC PARAMETERS (Note 6)
Total Gate Charge
5
S
V
gFS
⎯
⎯
⎯
1.1
VDS = 10V, ID = 8A
IS = 2.25A, VGS = 0V
0.7
VSD
10.5
3.8
2.9
11
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Qg
Qgs
Qgd
tD(on)
tr
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VGS = 5V, VDS = 15V, ID = 6A
VGS = 10V, VDS = 15V, ID = 6A
VGS = 10V, VDS = 15V, ID = 6A
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
7
V
DD = 15V, VGS = 10V,
Turn-Off Delay Time
63
RD = 1.8Ω, RG = 6Ω
tD(off)
tf
Turn-Off Fall Time
30
Input Capacitance
755
136
108
Ciss
Coss
Crss
V
DS = 10V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Notes:
5. Test pulse width t = 300ms.
6. Guaranteed by design. Not subject to production testing.
20
18
16
14
12
10
V
= 5V
DS
Pulsed
8
6
4
2
0
0
1
2
3
4
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January 2010
© Diodes Incorporated
DMN3033LSN
Document number: DS31116 Rev. 5 - 2
DMN3033LSN
0.06
0.05
1,200
1,000
f = 1 MHz
V
= 0V
GS
800
600
C
iss
0.04
0.03
V
= 4.5V
GS
400
V
= 10V
GS
0.02
0.01
200
0
C
oss
C
rss
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Fig. 4 Typical Total Capacitance
Fig. 3 On-Resistance vs. Drain Current and Gate Voltage
2
V
= 10V
= 6A
GS
I
1.5
1
D
V
= 4.5V
= 5A
GS
I
D
0.5
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (C)
Fig. 6 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
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January 2010
© Diodes Incorporated
DMN3033LSN
Document number: DS31116 Rev. 5 - 2
DMN3033LSN
Ordering Information (Note 7)
Part Number
DMN3033LSN-7
Case
SC-59
Packaging
3000/Tape & Reel
Notes:
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
A5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
A5
M = Month (ex: 9 = September)
Date Code Key
Year
2007
2008
2009
2010
2011
2012
2013
2014
2015
Code
U
V
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Package Outline Dimensions
A
C
B
SC-59
Dim
A
B
C
D
G
H
J
K
L
Min
Max
0.50
1.70
3.00
-
Typ
0.38
1.60
2.80
0.95
1.90
3.00
0.05
1.10
0.40
0.15
0.75
-
G
H
0.35
1.50
2.70
-
K
M
N
-
-
2.90
0.013 0.10
3.10
J
L
D
1.00
0.35
0.10
0.70
0°
1.30
0.55
0.20
0.80
8°
M
N
α
All Dimensions in mm
Suggested Pad Layout
Y
Z
C
Dimensions Value (in mm)
Z
X
Y
C
E
3.4
0.8
1.0
2.4
1.35
X
E
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January 2010
© Diodes Incorporated
DMN3033LSN
Document number: DS31116 Rev. 5 - 2
DMN3033LSN
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
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January 2010
© Diodes Incorporated
DMN3033LSN
Document number: DS31116 Rev. 5 - 2
相关型号：
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DIODES
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