DMG8822UTS-13 [DIODES]
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET; 双N沟道增强型MOSFET
| 型号： | DMG8822UTS-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMG8822UTS
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
•
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 3)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
•
•
Case: TSSOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram Below
Marking Information: See Page 4
•
•
•
•
•
Ordering Information: See Page 4
Weight: 0.039 grams (approximate)
D1
D2
G1
G2
1
2
3
4
8
D
S1
S1
G1
D
S2
S2
G2
7
6
5
S1
S2
Top View
Internal Schematic
TOP VIEW
BOTTOM VIEW
Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
20
±8
Unit
V
Gate-Source Voltage
V
VGSS
T
A = 25°C
Steady
State
4.9
3.9
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
A
A
ID
TA = 70°C
31
IDM
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1)
0.87
W
PD
143
°C/W
°C
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
RθJA
-55 to +150
TJ, TSTG
Notes:
1. Device mounted on FR-4 PCB with minimum recommended pad layout.
2. Repetitive rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
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© Diodes Incorporated
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
DMG8822UTS
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
20
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
1.0
μA
nA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
-
±100
IGSS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
0.5
-
-
0.9
V
VGS(th)
VDS = VGS, ID = 250μA
V
GS = 4.5V, ID = 8.2A
19
22
28
25
29
37
Static Drain-Source On-Resistance
mΩ
RDS (ON)
VGS = 2.5V, ID = 3.3A
VGS = 1.8V, ID = 2.0A
VDS = 10V, ID = 4A
Is = 2.25A, VGS = 0V
Forward Transfer Admittance
Diodes Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
-
-
7
-
S
V
|Yfs|
VSD
0.7
0.9
-
-
-
-
841
88
-
-
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
V
DS = 10V, VGS = 0V,
Output Capacitance
f = 1.0MHz
81
Reverse Transfer Capacitance
Gate Resistance
1.24
VDS =0V, VGS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
-
-
-
-
-
-
-
9.6
1.4
-
-
-
-
-
-
-
nC
nC
nC
ns
ns
ns
ns
Qg
Qgs
Qgd
tD(on)
tr
VGS = 4.5V, VDS = 10V,
Gate-Source Charge
I
D = 8.2A
2.1
Gate-Drain Charge
7.8
Turn-On Delay Time
21.1
38.6
10.1
Turn-On Rise Time
V
DD = 10V, VGS = 4.5V,
Turn-Off Delay Time
RL = 10ꢀ, RG = 6ꢀ
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Short duration pulse test used to minimize self-heating effects.
6. Guaranteed by design. Not subject to production testing.
20
30
V
= 4.5V
V
V
= 2.0V
= 1.8V
GS
GS
V
= 3.5V
GS
V
= 3.0V
GS
V
= 5V
DS
15
10
V
= 2.8V
GS
GS
V
= 2.5V
GS
20
10
T
= 150°C
V
= 1.5V
A
GS
5
0
T
= 125°C
A
T
= 85°C
A
T
= 25°C
A
T
= -55°C
A
0
0
0.5
1
1.5
2
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
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© Diodes Incorporated
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
DMG8822UTS
0.05
0.04
0.05
0.04
V
= 4.5V
GS
T
= 150°C
= 125°C
A
V
= 1.8V
GS
0.03
0.02
0.03
0.02
T
A
T
= 85°C
= 25°C
= -55°C
V
= 2.5V
A
GS
GS
V
= 4.5V
T
A
T
A
0.01
0
0.01
0
0
5
10
15
20
25
30
0
5
10
15
20
ID, DRAIN CURRENT (A)
ID, DRAIN-SOURCE CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.7
1.5
0.04
0.03
V
= 2.5V
= 5A
GS
I
D
1.3
1.1
0.9
V
= 2.5V
= 5A
GS
I
D
0.02
V
= 4.5V
V
= 4.5V
GS
GS
I
= 10A
I
= 10A
D
D
0.01
0
0.7
0.5
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
Fig. 6 On-Resistance Variation with Temperature
20
18
1.2
1.0
16
14
0.8
0.6
0.4
12
10
8
I
= 1mA
D
T
= 25°C
A
I
= 250µA
D
6
4
0.2
0
2
0
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
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© Diodes Incorporated
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
DMG8822UTS
10,000
1,000
10,000
f = 1MHz
T
T
= 150°C
= 125°C
A
1,000
100
A
C
iss
T
T
= 85°C
= 25°C
A
C
oss
100
10
C
rss
10
1
A
0
5
10
15
20
2
4
6
8
10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
R
(t) = r(t) * R
θJA
θJA
R
= 141°C/W
θJA
0.01
D = 0.01
P(pk)
T
t
1
D = 0.005
t
2
- T = P * R (t)
J
A
θJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
Ordering Information (Note 7)
Part Number
Case
Packaging
DMG8822UTS-13
TSSOP-8L
2500 / Tape & Reel
Notes:
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
5
8
Logo
Part no
N8822U
YY WW
Xth week: 01~52
Year: “09” = 2009
1
4
Top View
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June 2009
© Diodes Incorporated
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
DMG8822UTS
Package Outline Dimensions
D
TSSOP-8L
Dim Min Max Typ
a
A
0.09
−
−
1.20
−
−
−
See Detail C
E
A1 0.05 0.15
E1
A2 0.825 1.025 0.925
b
c
0.19 0.30
0.09 0.20
−
−
D
e
E
2.90 3.10 3.025
0.65
6.40
−
−
−
−
e
c
b
E1 4.30 4.50 4.425
L
All Dimensions in mm
Gauge plane
0.45 0.75 0.60
a
A2
A1
A
L
D
Detail C
Suggested Pad Layout
Y
Dimensions Value (in mm)
X
Y
C1
C2
C3
G
0.45
1.78
7.72
0.65
4.16
0.20
X
C3
C1
C2
G
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© Diodes Incorporated
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
DMG8822UTS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
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June 2009
© Diodes Incorporated
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
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