DMG8N65-TR [DYELEC]
650V N-Channel Power MOSFET;
| 型号： | DMG8N65-TR |
| 厂家： | 
DIYI Electronic Technology Co., Ltd. |
| 描述： | 650V N-Channel Power MOSFET |
| 文件： | 总9页 (文件大小：2040K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
8N65
650V N-Channel Power MOSFET
R
<1.4Ω @ V =10V
●
●
DS(ON) GS
PRODUCT SUMMARY
Fast switching capability
VDS (V)
RDS(on)(Ω)
ID (A)
Low gate charge
●
●
●
Lead free in compliance with EU RoHS directive.
Green molding compound
8
650
1.4 @ VGS =10V
Pin Definition:
1. Gate
2. Drain
3. Source
●
Case: TO-220,ITO-220,TO-262,TO-263 Package
Ordering Information
Package
Part No.
DMT8N65-TU
DMF8N65-TU
DMK8N65-TU
DMG8N65-TU
DMG8N65-TR
Packing
50pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
800pcs / 13" Reel
TO-220
ITO-220
TO-262
TO-263
TO-263
Block Diagram
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
UNIT
V
Drain-Source Voltage
650
±30
8
Gate-Source Voltage
V
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
A
ID
8
A
IDM
32
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
230
4.5
mJ
ns
Peak Diode Recovery dv/dt (Note 4)
dv/dt
TO-220/TO-262/TO-263
142
48
W
W
Power Dissipation
PD
ITO-220
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°C
°C
°C
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 7.1mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 7.5A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
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May.2015-REV.00
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8N60
600V N-Channel Power MOSFET
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATING
62.5
UNIT
°C/W
TO-220/ITO-220
TO-262/TO-263
Junction to Ambient
Junction to Case
TO-220/TO-262/TO-263
ITO-220
0.85
θJC
°C/W
2.6
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
SYMBOL
TEST CONDITIONS
VGS=0V, ID=250μA
MIN TYP MAX UNIT
Drain-Source Breakdown Voltage
BVDSS
IDSS
650
V
10 μA
Drain-Source Leakage Current
Gate- Source Leakage Current
VDS=650V, VGS=0V
G=30V, VDS=0V
Forward
Reverse
V
100 nA
-100 nA
V/°C
IGSS
VGS=-30V, VDS=0V
△BVDSS/△T
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
J ID=250μA, Referenced to 25°C
0.7
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
VGS = 10V, ID = 4A
2.0
4.0
1.2 1.4
V
Ω
CISS
COSS
CRSS
1145 1255 pF
118 135 pF
Output Capacitance
VDS=25V, VGS=0V, f=1.0 MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
19
25
pF
tD(ON)
tR
tD(OFF)
tF
84 100 ns
100 130 ns
275 320 ns
64.5 140 ns
VDD =520V, ID =8A,
RG =25Ω (Note 1, 2)
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
QG
130 nC
nC
115
12
VDS=480V, ID=8A,
VGS=10V (Note 1, 2)
Gate-Source Charge
QGS
QGD
Gate-Drain Charge
40
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
1.4
V
A
VGS = 0V, IS = 8A
IS
8
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
32
A
Reverse Recovery Time
trr
365
3.4
ns
VGS=0V, IS=8A,
dIF/dt =100 A/μs (Note 1)
Reverse Recovery Charge
QRR
μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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2 / 9
8N65
650V N-Channel Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
SD controlled by pulse period
* D.U.T.-D vice Under Test
*
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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8N65
650V N-Channel Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
Unclamped Inductive Switching Waveforms
tp
Unclamped Inductive Switching Test Circuit
4 / 9
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8N65
650V N-Channel Power MOSFET
TYPICAL CHARACTERISTICS
On-State Characteristics
VGS
Transfer Characteristics
100
Top: 15.0V
10.0V
10
8.0V
10
150°C
7.0V
6.5V
6.0V
5.5 V
25°C
Bottorm:5.0V
1
5.0V
1
0.1
Notes:
1. 250µs Pulse Test
2. TC=25°C
Notes:
1. VDS=40V
2. 250µs Pulse Test
0.1
0.1
1
10
2
4
6
8
10
Drain-to-Source Voltage, VDS (V)
Gate-Source Voltage, VGS (V)
On-Resistance Variation vs. Drain
Current and Gate Voltage
Body Diode Forward Voltage vs. Source
Current
6
5
4
TJ=25°C
10
150°C
25°C
VGS=10V
3
2
1
VGS=20V
Notes:
1. VGS=0V
2. 250µs Test
1
0
0.1
0.2
0.4 0.6
0.8
1.2
1.0
1.4
1.6 1.8
0
5
10
15
20
Drain Current, ID (A)
Source-Drain Voltage, VSD (V)
Capacitance Characteristics
(Non-Repetitive)
Gate Charge Characteristics
12
ID=7.5A
Ciss=Cgs+Cgd (Cds=shorted)
oss=Cds+Cgd Crss=Cgd
1900
1700
C
Ciss
10
8
VDS=520V
VDS=300V
VDS=120V
1500
1300
1100
Coss
6
900
700
Crss
4
2
500
300
Notes:
1. VGS=0V
2. f = 1MHz
100
0
0
20
Total Gate Charge, QG (nC)
30
25
0
5
10
15
0.1
1
10
Drain-SourceVoltage, VDS (V)
5 / 9
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8N65
650V N-Channel Power MOSFET
TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs.
Temperature
On-Resistance Junction Temperature
3.0
1.2
1.1
2.5
2.0
1.0
1.5
1.0
0.9
0.8
Note:
1. VGS=10V
2. ID=4A
Note:
1. VGS=0V
2. ID=250µA
0.5
0.0
-100 -50
0
200
-50
0
-100
50
100 150 200
50
100 150
Junction Temperature, TJ (°C)
Junction Temperature, TJ (°C)
Maximum Drain Current vs. Case
Temperature
Maximum Safe Operating Area
100
10
10
8
Operation in This Area is Limited by RDS(on)
10µs
100µs
1ms
6
10ms
DC
4
1
Notes:
2
0
1. TJ=25°C
2. TJ=150°C
3. Single Pulse
0.1
1
10
100
25
50
75
100
125
150
1000
Drain-Source Voltage, VDS (V)
Case Temperature, TC (°C)
Transient Thermal Response Curve
D=0.5
1
D=0.2
D=0.1
0.1
D=0.05
0.02
0.01
Notes:
1. θJC (t) = 0.85°C/W Max.
Single pulse
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
0.01
10-4 10-3 10-2 10-1 100
101
10-5
Square Wave Pulse Duration, t1 (sec)
6 / 9
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8N65
650V N-Channel Power MOSFET
TO-220 Mechanical Drawing
ITO-220 Mechanical Drawing
7 / 9
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8N65
650V N-Channel Power MOSFET
TO-262 Mechanical Drawing
TO-263 Mechanical Drawing
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8N65
650V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for
such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify DIYI for any damages resulting from such improper use or sale.
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