DMG90401 [PANASONIC]

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SSMINI6-F3-B, 6 PIN;


型号：	DMG90401
厂家：	PANASONIC
描述：	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SSMINI6-F3-B, 6 PIN 放大器光电二极管晶体管
文件：	总5页 (文件大小：635K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

This product complies with the RoHS Directive (EU 2002/95/EC).

DMG90401

Silicon NPN epitaxial planar type (Tr1)

Silicon PNP epitaxial planar type (Tr2)

For general ampliﬁcation

DMG50401 in SSMini6 type package

 Features

ꢀPackage

 High forward current transfer ratio h_FEwith excellent linearity

 Low collector-emitter saturation voltage V_CE(sat)

 Contributes to miniaturization of sets, reduction of component count.

 Eco-friendly Halogen-free package

ꢀCode

SSMini6-F3-B

Package dimension clicks here.→

Click!

ꢀPin Name

ꢀBasic Part Number

1: Emitter (Tr1)

2: Base (Tr1)

4: Emitter (Tr2)

5: Base (Tr2)

6: Collector (Tr1)

DSC2001 + DSA2001 (Individual)

3: Collector (Tr2)

 Packaging

ꢀMarking Symbol: A9

ꢀInternal Connection

DMG904010R Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)

ꢀAbsolute Maximum Ratings T = 25°C

(C1) (B2) (E2)

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Tr1 Emitter-base voltage (Collector open)

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

Tr1

Tr2

100

(E1) (B1) (C2)

Peak collector current

I_CP

200

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Tr2 Emitter-base voltage (Collector open)

Collector current

V_CBO

V_CEO

V_EBO

I_C

–60

–50

–7

–100

–200

125

°C

Peak collector current

I_CP

Total power dissipation

P_T

Overall Junction temperature

Storage temperature

T_j

150

stg

–55 to +150

Publication date: January 2012

Ver. DED

This product complies with the RoHS Directive (EU 2002/95/EC).

DMG90401

ꢀElectrical Characteristics T = 25°C±3°C

ꢀTr1

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

V_CBOI_C= 10 µA, I_E= 0

V_CEOI_C= 2 mA, I_B= 0

V_EBOI_E= 10 µA, I_C= 0

I_CBO

I_CEO

h_FE

V_CB= 20 V, I_E= 0

V_CE= 10 V, I_B= 0

V_CB= 10 V, I_C= 2 mA

0.1

100

460

0.3

µA



210

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= 100 mA, I_B= 10 mA

0.13

150

f_T

V_CB= 10 V, I_C= 2 mA

MHz

Collector output capacitance

C_ob

V_CB= 10 V, I_E= 0, f = 1 MHz

1.5

(Common base, input open circuited)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

ꢀTr2

Parameter

Symbol

Conditions

Min

–60

–50

–7

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

V_CBOI_C= –10 µA, I_E= 0

V_CEOI_C= –2 mA, I_B= 0

V_EBOI_E= –10 µA, I_C= 0

I_CBO

I_CEO

h_FE

V_CB= –20 V, I_E= 0

V_CE= –10 V, I_B= 0

V_CE= –10 V, I_C= –2 mA

– 0.1

–100

460

µA



210

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= –100 mA, I_B= –10 mA

– 0.2

150

– 0.5

f_T

V_CB= –10 V, I_C= –2 mA

MHz

Collector output capacitance

C_ob

V_CB= –10 V, I_E= 0, f = 1 MHz

(Common base, input open circuited)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Common characteristics chart

P_T T

150

125

100

120

160

200

(

)

Ambient temperature T_a°C

Ver. DED

This product complies with the RoHS Directive (EU 2002/95/EC).

DMG90401

Characteristics charts of Tr1

I_C V_CE

h_FE I_C

V_CE(sat) I_C

120

600

500

400

300

200

100

I_C/ I_B= 10

_CE= 10 V

T_a= 25°C

100

T_a= 85°C

0.1

_B= 250 µA

200 µA

150 µA

100 µA

50 µA

25°C

−30°C

T_a= 85°C

25°C

−30°C

0.01

0.1

100

0.1

100

Collector-emitter voltage V_CE(V)

Collector current I_C(mA)

I_C V_BE

C_ob V_CB

f_T I_C

120

100

250

200

150

100

V_CE= 10 V

T_a= 25°C

_CE= 10 V

4.0

3.0

2.0

1.0

25°C

T_a= 85°C

−30°C

0.2 0.4 0.6 0.8 1.0 1.2

100

0.1

100

Base-emitter voltage V_BE(V)

Collector-base voltage V_CB(V)

Collector current I_C(mA)

Characteristics charts of Tr2

I_C V_CE

h_FE I_C

V_CE(sat) I_C

−10

−1

−120

600

500

400

300

200

100

I_C/ I_B= 10

_CE= −10 V

T_a= 25°C

_B= −600 µA

−500 µA

−100

−400 µA

−300 µA

−80

−60

−40

−20

T_a= 85°C

25°C

−200 µA

−100 µA

− 0.1

T_a= 85°C

25°C

−30°C

−10

− 0.01

−2

−4

−6

−8 −10 −12

− 0.1

−1

−100

− 0.1

−1

−10

−100

Collector-emitter voltage V_CE(V)

Collector current I_C(mA)

Ver. DED

This product complies with the RoHS Directive (EU 2002/95/EC).

DMG90401

I_C V_BE

C_ob V_CB

f_T I_C

−120

250

I_E= 0

f = 1 MHz

T_a= 25°C

V_CE= −10 V

_a= 25°C

_CE= −10 V

4.0

3.0

2.0

1.0

25°C

−100

−80

−60

−40

−20

200

150

100

T_a= 85°C

−30°C

− 0.4

− 0.8

−1.2

−1

−10

−100

− 0.1

−1

−10

−100

Base-emitter voltage V_BE(V)

Collector-base voltage V_CB(V)

Collector current I_C(mA)

Ver. DED

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any

other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any

other company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for general applications (such as office equipment, communications

equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.

Consult our sales staff in advance for information on the following applications:

– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,

life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of

the products may directly jeopardize life or harm the human body.

It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with

your using the products described in this book for any special application, unless our company agrees to your using the products in

this book for any special application.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.

20100202

DMG90401 [PANASONIC]

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