DMG8880LK3-13 [DIODES]

N-CHANNEL ENHANCEMENT MODE MOSFET; N沟道增强型MOSFET


型号：	DMG8880LK3-13
厂家：	DIODES INCORPORATED
描述：	N-CHANNEL ENHANCEMENT MODE MOSFET N沟道增强型MOSFET
文件：	总6页 (文件大小：225K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMG8880LK3

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

Mechanical Data

•

Low On-Resistance

•

Case: TO252-3L

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram Below

Weight: 0.33 grams (approximate)

•

Qualified to AEC-Q101 Standards for High Reliability

TO252-3L

Equivalent Circuit

Top View

PIN OUT -TOP VIEW

Ordering Information (Note 3)

Part Number

Case

Packaging

DMG8880LK3-13

TO252-3L

2500 / Tape & Reel

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

G8880L = Product Type Marking Code

= Manufacturer’s Marking

YYWW = Date Code Marking

YY = Year (ex: 09 = 2009)

WW = Week (01 ~ 53)

G8880L

YYWW

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www.diodes.com

October 2010

DMG8880LK3

Document number: DS32052 Rev. 3 - 2

DMG8880LK3

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

±20

V_GSS

T_A= 25°C

T_A= 85°C

T_A= 25°C

T_A= 85°C

Steady

Continuous Drain Current (Note 4) V_GS= 10V

State

I_D

Steady

Continuous Drain Current (Note 5) V_GS= 10V

State

16.5

I_D

Pulsed Drain Current (Note 6)

I_DM

Thermal Characteristics

Characteristic

Power Dissipation (Note 4)

Symbol

P_D

Value

1.68

74.3

4.1

Unit

°C/W

Thermal Resistance, Junction to Ambient @T_A= 25°C (Note 4)

Power Dissipation (Note 5)

R_θJA

P_D

30.8

°C/W

Thermal Resistance, Junction to Ambient @T_A= 25°C (Note 5)

Operating and Storage Temperature Range

R_θJA

-55 to +150

°C

T_J, T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

V_DS= 30V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

1.0

Zero Gate Voltage Drain Current T_J= 25°C

Gate-Source Leakage

μA

±100

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1.0

1.5

2.0

V_GS(th)

V_DS= V_GS, I_D= 250μA

V_GS= 10V, I_D= 11.6A

V_GS= 4.5V, I_D= 10.7A

V_DS= 15V, I_D= 15A

V_GS= 0V, I_SD= 2.1A

7.0

9.6

9.3

mΩ

Static Drain-Source On-Resistance

R_{DS (ON)}

Forward Transfer Admittance

Diode Forward Voltage

|Y_fs|

V_SD

0.7

1.0

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

1289

187

C_iss

C_oss

C_rss

R_g

_DS= 15V, V_GS= 0V,

Output Capacitance

f = 1.0MHz

Reverse Transfer Capacitance

Gate Resistance

162

0.97

V_DS= 0V, V_GS= 0V, f = 1MHz

V_GS= 10V, V_DS= 15V,

Total Gate Charge at 10V

27.6

Q_g

_D= 11.6A, Ig = 1.0mA

Total Gate Charge at 5V

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

14.4

3.6

Q_g

Q_gs

Q_gd

t_D(on)

t_r

_GS= 5V, V_DS= 15V,

I_D= 11.6A

4.9

7.04

17.52

36.13

19.67

V_DD= 15V, V_GS= 10V,

R_G= 11Ω, I_D= 11.6A,

R_L= 1.3Ω

t_D(off)

t_f

Notes:

4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.

5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2oz. copper, single sided.

6. Repetitive rating, pulse width limited by junction temperature and current limited by package.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

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www.diodes.com

October 2010

DMG8880LK3

Document number: DS32052 Rev. 3 - 2

DMG8880LK3

= 8.0V

= 5V

= 4.5V

= 3.5V

= 3.2V

= 3.0V

= 150°C

= 125°C

= 85°C

= 25°C

= -55°C

= 2.5V

= 2.2V

0.5

1.0

1.5

2.0

V_GS, GATE SOURCE VOLTAGE (V)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

Fig. 2 Typical Transfer Characteristics

0.03

0.02

0.020

0.015

= 4.5V

= 150°C

0.010

= 4.5V

= 8.0V

= 125°C

= 85°C

0.01

= 25°C

0.005

= -55°C

I_D, DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

I_D, DRAIN-SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

1.7

1.5

0.025

0.020

= 10V

= 20A

1.3

1.1

0.9

0.015

0.010

= 4.5V

= 10A

= 4.5V

= 10A

0.005

= 10V

0.7

0.5

= 20A

-50 -25

75 100 125 150

-50 -25

75 100 125 150

T_J, JUNCTION TEMPERATURE (°C)

Fig. 5 On-Resistance Variation with Temperature

Fig. 6 On-Resistance Variation with Temperature

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www.diodes.com

October 2010

DMG8880LK3

Document number: DS32052 Rev. 3 - 2

DMG8880LK3

2.4

2.0

= 25°C

1.6

1.2

0.8

= 1mA

= 250µA

0.4

-50 -25

T_A, AMBIENT TEMPERATURE (°C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

75 100 125 150

0.2

0.4

0.6

0.8

1.0

1.2

V_SD, SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

10,000

1,000

f = 1MHz

= 150°C

= 125°C

iss

100

1,000

= 85°C

= 25°C

oss

rss

100

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Capacitance

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.9

D = 0.05

D = 0.02

(t) = r(t) * R

θJA

= 76°C/W

0.01

P(pk)

D = 0.01

D = 0.005

- T = P * R (t)

A θJA

Duty Cycle, D = t /t

D = Single Pulse

0.001

0.00001

0.0001

0.001

0.01

0.1

100

1,000

t₁, PULSE DURATION TIME (s)

Fig. 11 Transient Thermal Response

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www.diodes.com

October 2010

DMG8880LK3

Document number: DS32052 Rev. 3 - 2

DMG8880LK3

Package Outline Dimensions

TO252-3L

Dim Min Typ

Max

2.39

1.17

0.88

1.14

5.50

0.58

6.20

6.70

2.19 2.29

0.97 1.07

0.64 0.76

0.76 0.95

5.21 5.33

0.45 0.51

6.00 6.10

6.45 6.58

2.286 Typ.

9.40 9.91 10.41

1.40 1.59

0.88 1.08

0.64 0.83

1.78

1.27

1.02

10°

0°

SEATING

PLANE

All Dimensions in mm

Suggested Pad Layout

Dimensions

Value (in mm)

11.6

1.5

7.0

2.5

7.0

6.9

2.3

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October 2010

DMG8880LK3

Document number: DS32052 Rev. 3 - 2

DMG8880LK3

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

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LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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6 of 6

www.diodes.com

October 2010

DMG8880LK3

Document number: DS32052 Rev. 3 - 2

DMG8880LK3-13 [DIODES]

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