DMG8880LSS [DIODES]
N-CHANNEL ENHANCEMENT MODE MOSFET; N沟道增强型MOSFET型号: | DMG8880LSS |
厂家: | DIODES INCORPORATED |
描述: | N-CHANNEL ENHANCEMENT MODE MOSFET |
文件: | 总6页 (文件大小:143K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DMG8880LSS
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
•
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.072 grams (approximate)
•
•
•
S
D
S
S
G
D
D
D
Top View
Top View
Internal Schematic
Ordering Information (Note 3)
Part Number
Case
Packaging
DMG8880LSS-13
SO-8
2500 / Tape & Reel
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
8
5
Logo
G8880LS
YY WW
Part no.
Xth week: 01 ~ 53
Year: “08” = 2008
“09” = 2009
1
4
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January 2011
© Diodes Incorporated
DMG8880LSS
Document number: DS31948 Rev. 4 - 2
DMG8880LSS
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
±20
V
VGSS
T
A = 25°C
Steady
11.6
8.5
Continuous Drain Current (Note 4)
State
A
A
ID
TA = 70°C
Pulsed Drain Current (Note 5)
80
IDM
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Symbol
PD
Value
1.43
Unit
W
87
°C/W
°C
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)
Operating and Storage Temperature Range
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
30
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
1.0
μA
nA
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
VDS = 30V, VGS = 0V
-
±100
IGSS
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
1.0
1.5
2.0
V
mΩ
V
VGS(th)
RDS (ON)
VSD
VDS = VGS, ID = 250μA
V
GS = 10V, ID = 11.6A
7.0
9.6
10
14
Static Drain-Source On-Resistance
-
-
VGS = 4.5V, ID = 10.7A
VGS = 0V, IS = 2.1A
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
0.7
1.0
-
-
-
-
1289
187
-
-
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
V
DS = 15V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
162
0.97
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 10V, VDS = 15V,
Total Gate Charge at 10V
-
27.6
-
nC
Qg
I
D = 11.6A, IG = 1.0mA
Total Gate Charge at 5V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
-
-
-
14.4
3.6
-
-
-
-
-
-
-
nC
nC
nC
ns
ns
ns
ns
Qg
Qgs
Qgd
tD(on)
tr
V
GS = 5V, VDS = 15V,
I
D = 11.6A, IG = 1.0mA
4.9
7.04
17.52
36.13
19.67
V
DD = 15V, VGS = 10V,
RGS = 11Ω, ID = 11.6A
tD(off)
tf
Notes:
4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
5. Repetitive rating, pulse width limited by junction temperature.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
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January 2011
© Diodes Incorporated
DMG8880LSS
Document number: DS31948 Rev. 4 - 2
DMG8880LSS
30
25
20
50
40
V
= 8.0V
GS
V
= 5V
DS
V
= 4.5V
GS
V
= 3.5V
GS
30
20
15
10
V
= 3.2V
= 3.0V
GS
T
= 150°C
A
V
GS
10
0
T
= 85°C
T
= 125°C
A
A
5
0
T
= 25°C
A
V
= 2.5V
V
= 2.2V
GS
GS
T
= -55°C
A
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
0.03
0.02
0.02
V
= 4.5V
GS
0.015
T
T
= 150°C
A
0.01
V
V
= 4.5V
= 8.0V
GS
= 125°C
= 85°C
A
A
T
0.01
T
= 25°C
GS
A
A
0.005
0
T
= -55°C
0
0
10
20
30
40
50
0
5
10
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.7
1.5
0.025
0.02
1.3
1.1
0.015
0.01
V
= 4.5V
GS
V
= 4.5V
GS
I
= 10A
D
I
= 10A
D
0.9
0.7
0.5
V
= 10V
= 20A
GS
V
= 10V
0.005
0
GS
I
D
I
= 20A
D
-50 -25
0
25
50
75 100 125 150
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
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© Diodes Incorporated
DMG8880LSS
Document number: DS31948 Rev. 4 - 2
DMG8880LSS
20
18
2.4
2.0
16
14
12
10
8
T
= 25°C
A
1.6
1.2
0.8
I
= 1mA
D
I
= 250µA
D
6
4
0.4
0
2
0
-50 -25
0
25
50
75 100 125 150
0.2
0.4
0.6
0.8
1
1.2
TA, AMBIENT TEMPERATURE (°C)
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10,000
10,000
1,000
100
T
= 150°C
= 125°C
A
A
T
C
iss
1,000
T
T
= 85°C
= 25°C
A
10
1
C
A
oss
C
rss
100
0
5
10
15
20
25
30
0
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
100
10
1
R
DS(on)
Limited
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
P
= 100µs
W
0.1
TJ(max) = 150°C
= 25°C
T
A
Single Pulse
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Safe Operation Area
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January 2011
© Diodes Incorporated
DMG8880LSS
Document number: DS31948 Rev. 4 - 2
DMG8880LSS
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
(t) = r(t) * R
θJA
θJA
R
= 91°C/W
θJA
D = 0.02
D = 0.01
D = 0.005
P(pk)
0.01
t
1
t
2
T
- T = P * R (t)
J
A θJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1,000
10,000
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
Package Outline Dimensions
SO-8
Min
-
0.10
1.30
0.15
0.3
Dim
A
A1
A2
A3
b
Max
1.75
0.20
1.50
0.25
0.5
E1
E
Gauge Plane
Seating Plane
A1
L
Detail ‘A’
D
E
E1
e
4.85
5.90
3.85
4.95
6.10
3.95
7°~9°
h
°
45
1.27 Typ
h
L
θ
-
0.35
0.82
8°
Detail ‘A’
A2
A3
A
0.62
0°
b
e
All Dimensions in mm
D
Suggested Pad Layout
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
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January 2011
© Diodes Incorporated
DMG8880LSS
Document number: DS31948 Rev. 4 - 2
DMG8880LSS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
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© Diodes Incorporated
DMG8880LSS
Document number: DS31948 Rev. 4 - 2
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