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DCX122LH-7 [DIODES]

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR; 互补NPN / PNP预偏置小信号SOT- 563双表面贴装晶体管
DCX122LH-7
型号： DCX122LH-7
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR
互补NPN / PNP预偏置小信号SOT- 563双表面贴装晶体管

晶体 小信号双极晶体管 光电二极管
文件： 总4页 (文件大小：76K)
中文：  中文翻译
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SPICE MODELS: DCX122LH DCX142JH DCX122TH DCX142TH  
Pb  
Lead-free  
DCX (LO-R1) H  
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL  
SOT-563 DUAL SURFACE MOUNT TRANSISTOR  
Features  
·
·
·
Epitaxial Planar Die Construction  
SOT-563  
A
Built-In Biasing Resistors  
Dim Min  
Max  
0.30  
1.25  
1.70  
0.50  
1.10  
1.70  
0.60  
0.25  
0.18  
Typ  
0.25  
1.20  
1.60  
Lead Free By Design/RoHS Compliant (Note 3)  
A
B
C
D
G
H
K
L
0.15  
1.10  
1.55  
B
CXXYM  
C
Mechanical Data  
·
·
Case: SOT-563  
D
G
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
0.90  
1.50  
0.56  
0.15  
0.10  
1.00  
1.60  
0.60  
0.20  
0.11  
·
·
Moisture sensitivity: Level 1 per J-STD-020C  
Terminals: Finish - Matte Tin annealed over Alloy 42  
leadframe. Solderable per MIL-STD-202, Method 208  
M
K
·
·
Terminal Connections: See Diagram  
Weight: 0.005 grams (approx.)  
M
H
L
All Dimensions in mm  
P/N  
DCX122LH  
DCX142JH  
DCX122TH  
DCX142TH  
R1 (NOM) R2 (NOM) MARKING  
R1  
R2  
R1  
R1  
0.22KW  
0.47KW  
0.22KW  
0.47KW  
10KW  
10KW  
OPEN  
OPEN  
C81  
C82  
C83  
C84  
R2  
R1  
R1, R2  
SCHEMATIC DIAGRAM, TOP VIEW  
R1 Only  
@ TA = 25°C unless otherwise specified  
Maximum Ratings NPN Section  
Characteristic  
Symbol  
Value  
Unit  
VCC  
Supply Voltage  
50  
V
Input Voltage  
DCX122LH  
DCX142JH  
-5 to +6  
-5 to +6  
VIN  
V
V
Input Voltage  
DCX122TH  
DCX142TH  
VEBO (MAX)  
5
IC  
Pd  
Output Current  
All  
100  
150  
mA  
mW  
°C/W  
°C  
Power Dissipation (Note 1, 2)  
RqJA  
Tj, TSTG  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage and Temperature Range  
833  
-55 to +150  
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.  
2. NPN Section, PNP Section, or maximum combined.  
3. No purposefully added lead.  
DS30429 Rev. 2 - 2  
1 of 4  
DCX (LO-R1) H  
www.diodes.com  
ã Diodes Incorporated  
@ TA = 25°C unless otherwise specified  
Maximum Ratings PNP Section  
Characteristic  
Symbol  
Value  
Unit  
VCC  
Supply Voltage  
-50  
V
Input Voltage  
DCX122LH  
DCX142JH  
+5 to -6  
+5 to -6  
VIN  
V
V
Input Voltage  
DCX122TH  
DCX142TH  
VEBO (MAX)  
-5  
IC  
Pd  
Output Current  
All  
-100  
150  
mA  
mW  
°C/W  
°C  
Power Dissipation (Note 1, 2)  
RqJA  
Tj, TSTG  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage and Temperature Range  
833  
-55 to +150  
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.  
2. NPN Section, PNP Section, or maximum combined.  
Electrical Characteristics NPN Section @ TA = 25°C unless otherwise specified R1, R2 Types  
Characteristic  
Symbol  
Min  
Typ  
Max Unit  
Test Condition  
DCX122LH  
DCX142JH  
0.3  
0.3  
Vl(off)  
VCC = 5V, IO = 100mA  
¾
¾
V
Input Voltage  
VO = 0.3V, IO = 20mA  
VO = 0.3V, IO = 20mA  
2.0  
2.0  
DCX122LH  
DCX142JH  
Vl(on)  
VO(on)  
Il  
¾
¾
¾
¾
¾
¾
¾
¾
¾
V
V
IO/Il = 5mA/0.25mA  
Output Voltage  
Input Current  
0.3V  
DCX122LH  
DCX142JH  
28  
13  
VI = 5V  
mA  
mA  
¾
VCC = 50V, VI = 0V  
VO = 5V, IO = 10mA  
IO(off)  
Gl  
Output Current  
DC Current Gain  
0.5  
DDCX122LH  
DDCX142JH  
56  
56  
¾
VCE = 10V, IE = 5mA,  
f = 100MHz  
fT  
Gain-Bandwidth Product*  
¾
200  
¾
MHz  
* Transistor - For Reference Only  
@ T = 25°C unless otherwise specified  
Electrical Characteristics NPN Section  
R1-Only  
A
Characteristic  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Symbol  
Min  
50  
Typ  
¾
Max Unit  
Test Condition  
BVCBO  
BVCEO  
IC = 50mA  
¾
¾
V
V
IC = 1mA  
40  
¾
Emitter-Base Breakdown Voltage DCX122TH  
DCX142TH  
IE = 50mA  
IE = 50mA  
BVEBO  
ICBO  
¾
5
¾
¾
¾
¾
V
mA  
mA  
V
VCB = 50V  
Collector Cutoff Current  
¾
0.5  
DCX122TH  
Emitter Cutoff Current  
¾
¾
0.5  
0.5  
VEB = 4V  
IEBO  
DCX142TH  
IC = 5mA, IB = 0.25mA  
IC = 1mA, VCE = 5V  
VCE(sat)  
hFE  
Collector-Emitter Saturation Voltage  
¾
0.3  
DCX122TH  
DC Current Transfer Ratio  
DCX142TH  
100  
100  
250  
250  
600  
600  
¾
VCE = 10V, IE = -5mA,  
f = 100MHz  
fT  
Gain-Bandwidth Product*  
¾
200  
¾
MHz  
* Transistor - For Reference Only  
DS30429 Rev. 2 - 2  
2 of 4  
www.diodes.com  
DCX (LO-R1) H  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics PNP Section  
R1, R2 Types  
Test Condition  
Characteristic  
Symbol  
Min  
Typ  
Max Unit  
DCX122LH  
DCX142JH  
-0.3  
-0.3  
Vl(off)  
VCC = -5V, IO = -100mA  
¾
¾
V
Input Voltage  
V
O = -0.3V, IO = -20mA  
DCX122LH  
DCX142JH  
-2.0  
-2.0  
Vl(on)  
VO(on)  
Il  
¾
¾
¾
¾
¾
¾
¾
¾
¾
V
V
VO = -0.3V, IO = -20mA  
IO/Il = -5mA/-0.25mA  
Output Voltage  
Input Current  
-0.3V  
DCX122LH  
DCX142JH  
-28  
-13  
VI = -5V  
mA  
mA  
¾
VCC = -50V, VI = 0V  
VO = -5V, IO = -10mA  
IO(off)  
Gl  
Output Current  
DC Current Gain  
-0.5  
DCX122LH  
DCX142JH  
56  
56  
¾
V
CE = -10V, IE = -5mA,  
fT  
Gain-Bandwidth Product*  
¾
200  
¾
MHz  
f = 100MHz  
* Transistor - For Reference Only  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
R1-Only Types  
Characteristic  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Symbol  
BVCBO  
BVCEO  
Min  
-50  
-40  
Typ  
¾
Max Unit  
Test Condition  
C = -50mA  
I
¾
¾
V
V
IC = -1mA  
¾
Emitter-Base Breakdown Voltage DCX122TH  
DCX142TH  
IE = -50mA  
IE = -50mA  
BVEBO  
ICBO  
¾
-5  
¾
¾
¾
¾
V
mA  
mA  
V
VCB = -50V  
Collector Cutoff Current  
¾
-0.5  
DCX122TH  
Emitter Cutoff Current  
¾
¾
-0.5  
-0.5  
VEB = -4V  
IEBO  
DCX142TH  
IC = -5mA, IB = -0.25mA  
IC = -1mA, VCE = -5V  
VCE(sat)  
hFE  
Collector-Emitter Saturation Voltage  
¾
-0.3  
DCX122TH  
DC Current Transfer Ratio  
DCX142TH  
100  
100  
250  
250  
600  
600  
¾
VCE = -10V, IE = 5mA,  
f = 100MHz  
fT  
Gain-Bandwidth Product*  
¾
200  
¾
MHz  
* Transistor - For Reference Only  
(Note 4)  
Ordering Information  
Device  
Packaging  
SOT-563  
SOT-563  
SOT-563  
SOT-563  
Shipping  
DCX122LH-7  
DCX142JH-7  
DCX122TH-7  
DCX142TH-7  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
CXX = Product Type Marking Code (See Page 1)  
YM = Date Code Marking  
Y = Year ex: P = 2003  
M = Month ex: 9 = September  
CXXYM  
Date Code Key  
Year  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
Code  
N
P
R
S
T
U
V
W
Month  
Code  
Jan  
Feb  
March  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
DS30429 Rev. 2 - 2  
3 of 4  
DCX (LO-R1) H  
www.diodes.com  
250  
200  
150  
100  
50  
0
-50  
0
50  
100  
150  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 1 Derating Curve - Total  
DS30429 Rev. 2 - 2  
4 of 4  
www.diodes.com  
DCX (LO-R1) H  

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