DCX122LU_1 [DIODES]

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR; 互补NPN / PNP预偏置小信号双表面贴装晶体管
DCX122LU_1
型号: DCX122LU_1
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
互补NPN / PNP预偏置小信号双表面贴装晶体管

晶体 晶体管
文件: 总4页 (文件大小:206K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DCX (LO-R1) U  
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR  
Features  
Epitaxial Planar Die Construction  
Built-In Biasing Resistors  
Lead Free/RoHS Compliant (Note 3)  
"Green" Device (Note 4 and 5)  
A
SOT-363  
Dim  
A
B
C
D
F
Min  
0.10  
1.15  
2.00  
Max  
0.30  
1.35  
2.20  
C
B
CXX YM  
Mechanical Data  
0.65 Nominal  
Case: SOT-363  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish - Matte Tin Solderable per MIL-STD-  
202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy  
42 leadframe).  
Terminal Connections: See Diagram  
Marking Information: See Page 4  
Type Code: See Table Below  
0.30  
1.80  
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
H
H
J
K
J
M
K
L
0.90  
0.25  
0.10  
0°  
L
D
F
M
α
All Dimensions in mm  
Ordering Information: See Page 4  
Weight: 0.006 grams (approximate)  
P/N  
R1 (NOM)  
0.22K  
0.47K  
0.22K  
0.47K  
R2 (NOM) Type Code  
R1  
R1  
R1  
R2  
DCX122LU  
DCX142JU  
DCX122TU  
DCX142TU  
10K  
10K  
C81  
C82  
C83  
C84  
OPEN  
OPEN  
R2  
R1  
R1, R2  
R1 Only  
SCHEMATIC DIAGRAM  
Maximum Ratings NPN Section  
@TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
Supply Voltage  
Input Voltage  
50  
V
VCC  
DCX122LU  
DCX142JU  
DCX122TU  
DCX142TU  
-5 to +6  
-5 to +6  
V
V
VIN  
Input Voltage  
5
VEBO (MAX)  
Output Current  
All  
(Note 1, 2)  
(Note 2)  
100  
200  
mA  
mW  
°C/W  
°C  
IC  
Power Dissipation  
Pd  
Thermal Resistance, Junction to Ambient Air  
Operating and Storage Temperature Range  
625  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
Notes:  
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.  
2. 150mW per element must not be exceeded.  
3. No purposefully added lead.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DS30425 Rev. 5 - 2  
DCX (LO-R1) U  
© Diodes Incorporated  
1 of 4  
www.diodes.com  
Maximum Ratings PNP Section  
@TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
Supply Voltage  
Input Voltage  
-50  
V
VCC  
DCX122LU  
VIN  
+5 to -6  
+5 to -6  
V
DCX142JU  
Input Voltage  
DCX122TU  
VEBO (MAX)  
DCX142TU  
-5  
-100  
V
mA  
mW  
°C/W  
°C  
Output Current  
All  
(Note 1,2)  
(Note 1,2)  
IC  
Power Dissipation  
200  
Pd  
Thermal Resistance, Junction to Ambient Air  
Operating and Storage Temperature Range  
625  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
Electrical Characteristics NPN Section  
@TA = 25°C unless otherwise specified  
R1, R2 Types  
Characteristic  
Symbol  
Vl(off)  
Vl(on)  
VO(on)  
Il  
Min  
Typ  
Max Unit  
Test Condition  
VCC = 5V, IO = 100μA  
DCX122LU  
DCX142JU  
DCX122LU  
DCX142JU  
0.3  
0.3  
V
V
Input Voltage  
VO = 0.3V, IO = 20mA  
VO = 0.3V, IO = 20mA  
2.0  
2.0  
Output Voltage  
Input Current  
0.3V  
V
IO/Il = 5mA/0.25mA  
VI = 5V  
DCX122LU  
DCX142JU  
28  
13  
mA  
Output Current  
DC Current Gain  
0.5  
IO(off)  
μA VCC = 50V, VI = 0V  
DCX122LU  
DCX142JU  
56  
56  
Gl  
fT  
VO = 5V, IO = 10mA  
Gain-Bandwidth Product*  
200  
MHz  
VCE = 10V, IE = 5mA, f = 100MHz  
* Transistor - For Reference Only  
Electrical Characteristics NPN Section  
@TA = 25°C unless otherwise specified  
R1 Only  
Characteristic  
Symbol  
Min  
Typ  
Max Unit  
Test Condition  
Collector-Base Breakdown Voltage  
50  
V
V
BVCBO  
IC = 50μA  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
40  
5
BVCEO  
BVEBO  
ICBO  
IC = 1mA  
IE = 50μA  
IE = 50μA  
DCX122TU  
DCX142TU  
V
Collector Cutoff Current  
Emitter Cutoff Current  
0.5  
μA VCB = 50V  
DCX122TU  
DCX142TU  
0.5  
0.5  
IEBO  
μA VEB = 4V  
Collector-Emitter Saturation Voltage  
DC Current Transfer Ratio  
0.3  
V
VCE(sat)  
IC = 5mA, IB = 0.25mA  
DCX122TU  
DCX142TU  
100  
100  
250  
250  
600  
600  
hFE  
fT  
IC = 1mA, VCE = 5V  
Gain-Bandwidth Product*  
200  
MHz  
VCE = 10V, IE = -5mA, f = 100MHz  
* Transistor - For Reference Only  
DS30425 Rev. 5 - 2  
DCX (LO-R1) U  
© Diodes Incorporated  
2 of 4  
www.diodes.com  
Electrical Characteristics PNP Section @TA = 25°C unless otherwise specified  
R1, R2 Types  
Characteristic  
Symbol  
Min  
Typ  
Max Unit  
Test Condition  
DCX122LU  
DCX142JU  
-0.3  
-0.3  
V
Vl(off)  
VCC = -5V, IO = -100μA  
Input Voltage  
VO = -0.3V, IO = -20mA  
VO = -0.3V, IO = -20mA  
DCX122LU  
DCX142JU  
-2.0  
-2.0  
V
V
Vl(on)  
VO(on)  
Il  
Output Voltage  
Input Current  
-0.3V  
IO/Il = -5mA/-0.25mA  
VI = -5V  
DCX122LU  
DCX142JU  
-28  
-13  
mA  
Output Current  
DC Current Gain  
-0.5  
IO(off)  
μA VCC = -50V, VI = 0V  
DCX122LU  
DCX142JU  
56  
56  
Gl  
fT  
VO = -5V, IO = -10mA  
Gain-Bandwidth Product*  
200  
MHz  
VCE = -10V, IE = -5mA, f = 100MHz  
* Transistor - For Reference Only  
Electrical Characteristics PNP Section  
@TA = 25°C unless otherwise specified  
R1 Only Types  
Characteristic  
Symbol  
Min  
-50  
-40  
Typ  
Max Unit  
Test Condition  
IC = -50μA  
Collector-Base Breakdown Voltage  
V
V
BVCBO  
BVCEO  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
IC = -1mA  
IE = -50μA  
IE = -50μA  
DCX122TU  
DCX142TU  
-5  
V
BVEBO  
ICBO  
Collector Cutoff Current  
-0.5  
μA VCB = -50V  
μA VEB = -4V  
DCX122TU  
DCX142TU  
-0.5  
-0.5  
Emitter Cutoff Current  
IEBO  
Collector-Emitter Saturation Voltage  
DC Current Transfer Ratio  
-0.3  
V
VCE(sat)  
IC = -5mA, IB = -0.25mA  
DCX122TU  
DCX142TU  
100  
100  
250  
250  
600  
600  
hFE  
fT  
IC = -1mA, VCE = -5V  
Gain-Bandwidth Product*  
200  
MHz  
VCE = -10V, IE = 5mA, f = 100MHz  
* Transistor - For Reference Only  
250  
200  
150  
100  
50  
0
-50  
0
50  
100  
150  
TA, AMBIENT TEMPERATURE (  
°C)  
Fig. 1 Power Derating Curve  
(150mW per element must not be exceeded).  
DS30425 Rev. 5 - 2  
DCX (LO-R1) U  
© Diodes Incorporated  
3 of 4  
www.diodes.com  
Ordering Information (Note 6)  
Packaging  
Shipping  
Device  
SOT-363  
3000/Tape & Reel  
DCX122LU-7-F  
SOT-363  
SOT-363  
SOT-363  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
DCX142JU-7-F  
DCX122TU-7-F  
DCX142TU-7-F  
Notes:  
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
CXX = Product Type Marking Code, See Table on Page 1  
YM = Date Code Marking  
Y = Year ex: N = 2002  
M = Month ex: 9 = September  
CXX YM  
Date Code Key  
Year  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
Code  
N
P
R
S
T
U
V
W
X
Y
Z
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
DS30425 Rev. 5 - 2  
DCX (LO-R1) U  
© Diodes Incorporated  
4 of 4  
www.diodes.com  

相关型号:

DCX122TH

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DCX122TH-7

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DCX122TU

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DCX122TU-7

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon, PLASTIC PACKAGE-6
DIODES

DCX122TU-7-F

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DCX123JH

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DCX123JH-7

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DCX123JK

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SC-74R DUAL SURFACE MOUNT TRANSISTOR
DIODES

DCX123JK-7

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SC-74R DUAL SURFACE MOUNT TRANSISTOR
DIODES

DCX123JK-7-F

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, PLASTIC, SC-74R, 6 PIN
DIODES

DCX123JU

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DCX123JU-13

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, PLASTIC PACKAGE-6
DIODES