DCX122TU [DIODES]
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR; 互补NPN / PNP预偏置小信号SOT -363双表面贴装晶体管
| 型号： | DCX122TU |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总4页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DCX (LO-R1) U
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL
SOT-363 DUAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
Epitaxial Planar Die Construction
SOT-363
A
Built-In Biasing Resistors
Dim
A
Min
0.10
1.15
2.00
Max
0.30
1.35
2.20
Lead Free/RoHS Compliant (Note 3)
C
B
CXX YM
B
Mechanical Data
·
C
Case: SOT-363
D
0.65 Nominal
·
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
G
H
F
0.30
1.80
¾
0.40
2.20
0.10
1.00
0.40
0.25
8°
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
H
K
J
M
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
J
K
0.90
0.25
0.10
0°
L
D
F
·
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
L
·
·
·
·
·
Terminal Connections: See Diagram
Marking: Date Code and Type Code, See Page 3
Type Code: See Table Below
M
a
All Dimensions in mm
Ordering Information (See Page 3)
Weight: 0.006 grams (approx.)
R1
R2
R1
P/N
DCX122LU
DCX142JU
DCX122TU
DCX142TU
R1 (NOM) R2 (NOM) Type Code
0.22K
0.47K
0.22K
0.47K
10K
10K
OPEN
OPEN
C81
C82
C83
C84
R2
R1
R1
R1, R2
R1 Only
SCHEMATIC DIAGRAM
@ TA = 25°C unless otherwise specified
Maximum Ratings NPN Section
Characteristic
Symbol
Value
Unit
VCC
Supply Voltage
50
V
Input Voltage
DCX122LU
DCX142JU
-5 to +6
-5 to +6
VIN
V
V
Input Voltage
DCX122TU
DCX142TU
VEBO (MAX)
5
IC
Pd
Output Current
All
100
200
mA
mW
°C/W
°C
Power Dissipation (Note 1, 2)
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient Air (Note 2)
Operating and Storage and Temperature Range
625
-55 to +150
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. 150mW per element must not be exceeded.
3. No purposefully added lead.
DS30425 Rev. 3 - 2
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DCX (LO-R1) U
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ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Maximum Ratings PNP Section
Characteristic
Symbol
Value
Unit
VCC
Supply Voltage
-50
V
Input Voltage
DCX122LU
DCX142JU
+5 to -6
+5 to -6
VIN
V
V
Input Voltage
DCX122TU
DCX142TU
VEBO (MAX)
-5
IC
Pd
Output Current
All
-100
200
mA
mW
°C/W
°C
Power Dissipation (Note 1,2)
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient Air (Note 1,2)
Operating and Storage and Temperature Range
625
-55 to +150
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. 150mW per element must not be exceeded.
@ TA = 25°C unless otherwise specified
Electrical Characteristics NPN Section
R1, R2 Types
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
VCC = 5V, IO = 100mA
VO = 0.3V, IO = 20mA
DCX122LU
DCX142JU
0.3
0.3
Vl(off)
¾
¾
V
Input Voltage
2.0
2.0
DCX122LU
DCX142JU
Vl(on)
VO(on)
Il
¾
¾
¾
¾
¾
¾
¾
¾
¾
V
V
V
O = 0.3V, IO = 20mA
IO/Il = 5mA/0.25mA
Output Voltage
Input Current
0.3V
DCX122LU
DCX142JU
28
13
VI = 5V
mA
mA
¾
VCC = 50V, VI = 0V
VO = 5V, IO = 10mA
IO(off)
Gl
Output Current
DC Current Gain
0.5
DCX122LU
DCX142JU
56
56
¾
VCE = 10V, IE = 5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
200
¾
MHz
* Transistor - For Reference Only
@ TA = 25°C unless otherwise specified
Electrical Characteristics NPN Section
R1 Only
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Symbol
Min
50
Typ
¾
Max Unit
Test Condition
BVCBO
BVCEO
I
C = 50mA
¾
¾
V
V
IC = 1mA
40
¾
Emitter-Base Breakdown Voltage DCX122TU
DCX142TU
IE = 50mA
IE = 50mA
BVEBO
ICBO
¾
5
¾
¾
¾
¾
V
mA
mA
V
VCB = 50V
Collector Cutoff Current
¾
0.5
DCX122TU
Emitter Cutoff Current
¾
¾
0.5
0.5
VEB = 4V
IEBO
DCX142TU
IC = 5mA, IB = 0.25mA
IC = 1mA, VCE = 5V
VCE(sat)
hFE
Collector-Emitter Saturation Voltage
¾
0.3
DCX122TU
DC Current Transfer Ratio
DCX142TU
100
100
250
250
600
600
¾
VCE = 10V, IE = -5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
200
¾
MHz
* Transistor - For Reference Only
DS30425 Rev. 3 - 2
2 of 4
www.diodes.com
DCX (LO-R1) U
@ TA = 25°C unless otherwise specified
Electrical Characteristics PNP Section
R1, R2 Types
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
VCC = -5V, IO = -100mA
VO = -0.3V, IO = -20mA
DCX122LU
DCX142JU
-0.3
-0.3
Vl(off)
¾
¾
V
Input Voltage
DCX122LU
DCX142JU
-2.0
-2.0
Vl(on)
VO(on)
Il
¾
¾
¾
¾
¾
¾
¾
¾
¾
V
V
V
O = -0.3V, IO = -20mA
IO/Il = -5mA/-0.25mA
Output Voltage
Input Current
-0.3V
DCX122LU
DCX142JU
-28
-13
VI = -5V
mA
mA
¾
VCC = -50V, VI = 0V
VO = -5V, IO = -10mA
IO(off)
Gl
Output Current
DC Current Gain
-0.5
DCX122LU
DCX142JU
56
56
¾
VCE = -10V, IE = -5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
200
¾
MHz
* Transistor - For Reference Only
@ TA = 25°C unless otherwise specified
Electrical Characteristics PNP Section
R1-Only Types
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Symbol
Min
-50
-40
Typ
¾
Max Unit
Test Condition
BVCBO
BVCEO
I
C = -50mA
¾
¾
V
V
IC = -1mA
¾
Emitter-Base Breakdown Voltage DCX122TU
DCX142TU
IE = -50mA
BVEBO
ICBO
¾
-5
¾
¾
¾
¾
V
mA
mA
V
I
E = -50mA
VCB = -50V
Collector Cutoff Current
¾
-0.5
DCX122TU
Emitter Cutoff Current
¾
¾
-0.5
-0.5
VEB = -4V
IEBO
DCX142TU
IC = -5mA, IB = -0.25mA
IC = -1mA, VCE = -5V
VCE(sat)
hFE
Collector-Emitter Saturation Voltage
¾
-0.3
DCX122TU
DC Current Transfer Ratio
DCX142TU
100
100
250
250
600
600
¾
VCE = -10V, IE = 5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
200
¾
MHz
* Transistor - For Reference Only
(Note 4)
Ordering Information
Device
Packaging
SOT-363
SOT-363
SOT-363
SOT-363
Shipping
DCX122LU-7-F
DCX142JU-7-F
DCX122TU-7-F
DCX142TU-7-F
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
CXX = Product Type Marking Code, See Table on Page 1
YM = Date Code Marking
Y = Year ex: N = 2002
CXX YM
M = Month ex: 9 = September
Date Code Key
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30425 Rev. 3 - 2
3 of 4
DCX (LO-R1) U
www.diodes.com
250
200
150
100
50
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
(150mW per element must not be exceeded).
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
DS30425 Rev. 3 - 2
4 of 4
DCX (LO-R1) U
www.diodes.com
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