DCX122TU-7 [DIODES]
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon, PLASTIC PACKAGE-6;
| 型号： | DCX122TU-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon, PLASTIC PACKAGE-6 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DCX (LO-R1) U
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL
SOT-363 DUAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
Epitaxial Planar Die Construction
SOT-363
A
Built-In Biasing Resistors
Dim
A
Min
0.10
1.15
2.00
Max
0.30
1.35
2.20
Available in Lead Free/RoHS Compliant Version (Note 3)
C
B
CXX YM
B
Mechanical Data
·
C
Case: SOT-363
D
0.65 Nominal
·
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
G
H
F
0.30
1.80
¾
0.40
2.20
0.10
1.00
0.40
0.25
8°
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
H
K
J
M
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
J
K
0.90
0.25
0.10
0°
L
D
F
·
Also available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please See Ordering
Information, Note 5, Page 3
L
M
·
·
·
·
·
Terminal Connections: See Diagram
Marking: Date Code and Type Code, See Page 3
Type Code: See Table Below
a
All Dimensions in mm
Ordering Information (See Page 3)
Weight: 0.006 grams (approx.)
R1
R2
R1
P/N
DCX122LU
DCX142JU
DCX122TU
DCX142TU
R1 (NOM) R2 (NOM) Type Code
0.22K
0.47K
0.22K
0.47K
10K
10K
OPEN
OPEN
C81
C82
C83
C84
R2
R1
R1
R1, R2
R1 Only
SCHEMATIC DIAGRAM
@ TA = 25°C unless otherwise specified
Maximum Ratings NPN Section
Characteristic
Symbol
Value
Unit
VCC
Supply Voltage
50
V
Input Voltage
DCX122LU
DCX142JU
-5 to +6
-5 to +6
VIN
V
V
Input Voltage
DCX122TU
DCX142TU
VEBO (MAX)
5
IC
Pd
Output Current
All
100
200
mA
mW
°C/W
°C
Power Dissipation (Note 1, 2)
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient Air (Note 2)
Operating and Storage and Temperature Range
625
-55 to +150
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. 150mW per element must not be exceeded.
3. No purposefully added lead.
DS30425 Rev. 2 - 2
1 of 4
DCX (LO-R1) U
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ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Maximum Ratings PNP Section
Characteristic
Symbol
Value
Unit
VCC
Supply Voltage
-50
V
Input Voltage
DCX122LU
DCX142JU
+5 to -6
+5 to -6
VIN
V
V
Input Voltage
DCX122TU
DCX142TU
VEBO (MAX)
-5
IC
Pd
Output Current
All
-100
200
mA
mW
°C/W
°C
Power Dissipation (Note 1,2)
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient Air (Note 1,2)
Operating and Storage and Temperature Range
625
-55 to +150
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. 150mW per element must not be exceeded.
@ TA = 25°C unless otherwise specified
Electrical Characteristics NPN Section
R1, R2 Types
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
VCC = 5V, IO = 100mA
DCX122LU
DCX142JU
0.3
0.3
Vl(off)
¾
¾
V
Input Voltage
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
2.0
2.0
DCX122LU
DCX142JU
Vl(on)
VO(on)
Il
¾
¾
¾
¾
¾
¾
¾
¾
¾
V
V
IO/Il = 5mA/0.25mA
Output Voltage
Input Current
0.3V
DCX122LU
DCX142JU
28
13
VI = 5V
mA
mA
¾
VCC = 50V, VI = 0V
VO = 5V, IO = 10mA
IO(off)
Gl
Output Current
DC Current Gain
0.5
DCX122LU
DCX142JU
56
56
¾
VCE = 10V, IE = 5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
200
¾
MHz
* Transistor - For Reference Only
@ TA = 25°C unless otherwise specified
Electrical Characteristics NPN Section
R1 Only
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Symbol
Min
50
Typ
¾
Max Unit
Test Condition
BVCBO
BVCEO
I
C = 50mA
¾
¾
V
V
IC = 1mA
40
¾
Emitter-Base Breakdown Voltage DCX122TU
DCX142TU
IE = 50mA
IE = 50mA
BVEBO
ICBO
¾
5
¾
¾
¾
¾
V
mA
mA
V
VCB = 50V
Collector Cutoff Current
¾
0.5
DCX122TU
Emitter Cutoff Current
¾
¾
0.5
0.5
VEB = 4V
IEBO
DCX142TU
IC = 5mA, IB = 0.25mA
IC = 1mA, VCE = 5V
VCE(sat)
hFE
Collector-Emitter Saturation Voltage
¾
0.3
DCX122TU
DC Current Transfer Ratio
DCX142TU
100
100
250
250
600
600
¾
VCE = 10V, IE = -5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
200
¾
MHz
* Transistor - For Reference Only
DS30425 Rev. 2 - 2
2 of 4
www.diodes.com
DCX (LO-R1) U
@ TA = 25°C unless otherwise specified
Electrical Characteristics PNP Section
R1, R2 Types
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
DCX122LU
DCX142JU
-0.3
-0.3
Vl(off)
VCC = -5V, IO = -100mA
¾
¾
V
Input Voltage
VO = -0.3V, IO = -20mA
VO = -0.3V, IO = -20mA
DCX122LU
DCX142JU
-2.0
-2.0
Vl(on)
VO(on)
Il
¾
¾
¾
¾
¾
¾
¾
¾
¾
V
V
IO/Il = -5mA/-0.25mA
Output Voltage
Input Current
-0.3V
DCX122LU
DCX142JU
-28
-13
VI = -5V
mA
mA
¾
VCC = -50V, VI = 0V
VO = -5V, IO = -10mA
IO(off)
Gl
Output Current
DC Current Gain
-0.5
DCX122LU
DCX142JU
56
56
¾
V
CE = -10V, IE = -5mA,
fT
Gain-Bandwidth Product*
¾
200
¾
MHz
f = 100MHz
* Transistor - For Reference Only
@ TA = 25°C unless otherwise specified
Electrical Characteristics PNP Section
R1-Only Types
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Symbol
Min
-50
-40
Typ
¾
Max Unit
Test Condition
BVCBO
BVCEO
IC = -50mA
¾
¾
V
V
IC = -1mA
¾
Emitter-Base Breakdown Voltage DCX122TU
DCX142TU
IE = -50mA
IE = -50mA
BVEBO
ICBO
¾
-5
¾
¾
¾
¾
V
mA
mA
V
VCB = -50V
Collector Cutoff Current
¾
-0.5
DCX122TU
Emitter Cutoff Current
¾
¾
-0.5
-0.5
VEB = -4V
IEBO
DCX142TU
IC = -5mA, IB = -0.25mA
IC = -1mA, VCE = -5V
VCE(sat)
hFE
Collector-Emitter Saturation Voltage
¾
-0.3
DCX122TU
DC Current Transfer Ratio
DCX142TU
100
100
250
250
600
600
¾
VCE = -10V, IE = 5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
200
¾
MHz
* Transistor - For Reference Only
(Note 4 & 5)
Ordering Information
Device
Packaging
SOT-363
SOT-363
SOT-363
SOT-363
Shipping
DCX122LU-7
DCX142JU-7
DCX122TU-7
DCX142TU-7
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant Version part number, please add "-F" suffix to the part number above. Example: DCX122LU-7-F.
Marking Information
CXX = Product Type Marking Code, See Table on Page 1
YM = Date Code Marking
Y = Year ex: N = 2002
CXX YM
M = Month ex: 9 = September
Date Code Key
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30425 Rev. 2 - 2
3 of 4
DCX (LO-R1) U
www.diodes.com
250
200
150
100
50
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
(150mW per element must not be exceeded).
DS30425 Rev. 2 - 2
4 of 4
www.diodes.com
DCX (LO-R1) U
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