DCX122LH_1 [DIODES]
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR; 互补NPN / PNP预偏置小信号双表面贴装晶体管
| 型号： | DCX122LH_1 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总4页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DCX (LO-R1) H
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
Epitaxial Planar Die Construction
Built-In Biasing Resistors
Lead Free By Design/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
SOT-563
A
Dim Min Max Typ
A
B
C
D
G
H
K
L
0.15 0.30 0.25
1.10 1.25 1.20
1.55 1.70 1.60
0.50
B
CXXYM
C
Mechanical Data
•
•
Case: SOT-563
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
D
G
0.90 1.10 1.00
1.50 1.70 1.60
0.56 0.60 0.60
0.15 0.25 0.20
0.10 0.18 0.11
•
•
M
K
•
•
Terminal Connections: See Diagram
Weight: 0.005 grams (approximate)
M
H
L
All Dimensions in mm
P/N
R1 (NOM)
0.22KΩ
0.47KΩ
0.22KΩ
0.47KΩ
R2 (NOM)
MARKING
DCX122LH
DCX142JH
DCX122TH
DCX142TH
10KΩ
10KΩ
OPEN
OPEN
C81
C82
C83
C84
R1
R1
R1
R2
R2
R1
R1, R2
R1 Only
SCHEMATIC DIAGRAM, TOP VIEW
Maximum Ratings NPN Section
@TA = 25°C unless otherwise specified
Characteristic
Supply Voltage
Symbol
Value
Unit
50
V
VCC
Input Voltage
DCX122LH
VIN
-5 to +6
-5 to +6
V
V
DCX142JH
Input Voltage
DCX122TH
VEBO (MAX)
DCX142TH
5
Output Current
All
(Note 1, 2)
(Note 1)
100
150
mA
mW
°C/W
°C
IC
Power Dissipation
Pd
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
833
Rθ
JA
-55 to +150
Tj, TSTG
Notes:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. NPN Section, PNP Section, or maximum combined.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30429 Rev. 3 - 2
DCX (LO-R1) H
© Diodes Incorporated
1 of 4
www.diodes.com
Maximum Ratings PNP Section @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Supply Voltage
Input Voltage
-50
V
VCC
DCX122LH
DCX142JH
+5 to -6
+5 to -6
V
V
VIN
Input Voltage
DCX122TH
DCX142TH
-5
VEBO (MAX)
Output Current
All
(Note 1, 2)
(Note 1)
-100
150
mA
mW
°C/W
°C
IC
Power Dissipation
Pd
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
833
Rθ
JA
-55 to +150
Tj, TSTG
Electrical Characteristics NPN Section @TA = 25°C unless otherwise specified
R1, R2 Types
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
DCX122LH
DCX142JH
0.3
0.3
V
Vl(off)
⎯
⎯
VCC = 5V, IO = 100μA
Input Voltage
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
DCX122LH
DCX142JH
2.0
2.0
V
V
Vl(on)
VO(on)
Il
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Output Voltage
Input Current
0.3V
IO/Il = 5mA/0.25mA
VI = 5V
DCX122LH
DCX142JH
28
13
mA
Output Current
DC Current Gain
0.5
IO(off)
Gl
μA VCC = 50V, VI = 0V
DDCX122LH
DDCX142JH
56
56
⎯
⎯
VO = 5V, IO = 10mA
Gain-Bandwidth Product*
200
MHz
fT
⎯
⎯
VCE = 10V, IE = 5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics NPN Section @TA = 25°C unless otherwise specified
R1-Only
Characteristic
Symbol
BVCBO
BVCEO
Min
50
Typ
⎯
Max Unit
Test Condition
IC = 50μA
Collector-Base Breakdown Voltage
V
V
⎯
⎯
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
40
⎯
IC = 1mA
IE = 50μA
IE = 50μA
DCX122TH
DCX142TH
5
V
BVEBO
ICBO
⎯
⎯
⎯
⎯
⎯
Collector Cutoff Current
0.5
⎯
μA VCB = 50V
μA VEB = 4V
DCX122TH
DCX142TH
⎯
⎯
0.5
0.5
Emitter Cutoff Current
IEBO
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
0.3
V
VCE(sat)
hFE
⎯
IC = 5mA, IB = 0.25mA
IC = 1mA, VCE = 5V
DCX122TH
DCX142TH
100
100
250
250
600
600
⎯
Gain-Bandwidth Product*
200
MHz
fT
⎯
⎯
VCE = 10V, IE = -5mA, f = 100MHz
* Transistor - For Reference Only
DS30429 Rev. 3 - 2
DCX (LO-R1) H
© Diodes Incorporated
2 of 4
www.diodes.com
Electrical Characteristics PNP Section @TA = 25°C unless otherwise specified
R1, R2 Types
Test Condition
Characteristic
Symbol
Min
Typ
Max Unit
DCX122LH
DCX142JH
-0.3
-0.3
V
Vl(off)
⎯
⎯
VCC = -5V, IO = -100μA
Input Voltage
VO = -0.3V, IO = -20mA
VO = -0.3V, IO = -20mA
DCX122LH
DCX142JH
-2.0
-2.0
V
V
Vl(on)
VO(on)
Il
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Output Voltage
Input Current
-0.3V
IO/Il = -5mA/-0.25mA
VI = -5V
DCX122LH
DCX142JH
-28
-13
mA
Output Current
DC Current Gain
-0.5
IO(off)
Gl
μA VCC = -50V, VI = 0V
DCX122LH
DCX142JH
56
56
⎯
⎯
VO = -5V, IO = -10mA
Gain-Bandwidth Product*
200
MHz
fT
⎯
⎯
VCE = -10V, IE = -5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics @TA = 25°C unless otherwise specified
R1-Only Types
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
Collector-Base Breakdown Voltage
-50
V
V
BVCBO
⎯
⎯
⎯
IC = -50μA
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
-40
-5
BVCEO
BVEBO
ICBO
⎯
⎯
⎯
⎯
⎯
IC = -1mA
IE = -50μA
IE = -50μA
DCX122TH
DCX142TH
V
⎯
Collector Cutoff Current
-0.5
⎯
μA VCB = -50V
μA VEB = -4V
DCX122TH
DCX142TH
⎯
⎯
-0.5
-0.5
Emitter Cutoff Current
IEBO
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
-0.3
V
VCE(sat)
hFE
⎯
IC = -5mA, IB = -0.25mA
IC = -1mA, VCE = -5V
DCX122TH
DCX142TH
100
100
250
250
600
600
⎯
Gain-Bandwidth Product*
200
MHz
fT
⎯
⎯
VCE = -10V, IE = 5mA, f = 100MHz
* Transistor - For Reference Only
250
200
150
100
50
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (
°C)
Fig. 1 Derating Curve - Total
DS30429 Rev. 3 - 2
DCX (LO-R1) H
© Diodes Incorporated
3 of 4
www.diodes.com
Ordering Information (Note 6)
Packaging
SOT-563
SOT-563
SOT-563
SOT-563
Shipping
Device
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
DCX122LH-7
DCX142JH-7
DCX122TH-7
DCX142TH-7
Notes:
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
CXX = Product Type Marking Code (See Page 1)
YM = Date Code Marking
Y = Year ex: T = 2006
CXXYM
M = Month ex: 9 = September
Date Code Key
2007
2008
2009
2010
2011
2012
Year
2002
2003
2004
2005
2006
U
V
W
X
Y
Z
Code
N
P
R
S
T
Aug
Sep
Oct
Nov
Dec
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
8
9
O
N
D
1
2
3
4
5
6
7
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30429 Rev. 3 - 2
DCX (LO-R1) H
© Diodes Incorporated
4 of 4
www.diodes.com
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