DAP222M [DIODES]
Ultra high speed switching; 超高速开关
| 型号： | DAP222M |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Ultra high speed switching |
| 文件： | 总4页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DAN222M/DAN222/DAN202U/DAN202K
DAP222M/DAP222/DAP202U/DAP202K
DA227
Diodes
Switching diode
DAN222M / DAN222 / DAN202U / DAN202K
DAP222M / DAP222 / DAP202U / DAP202K
DA227
zExternal dimensions (Unit : mm)
zApplication
Ultra high speed switching
DAN222M / DAP222M
DAN222 / DAP222
0.8±0.1
+
1.6 0.2
−
zFeatures
1) Four types of packaging are
available.
0.40.4
+
1.0 0.1
−
+
0.5±0.05
0.7 0.1
−
0.22±0.05
+
0.1
+
0.1
0.5 0.5
0.2
0.2
−
+
−
0.05
(2)
(1)
−
0.05
0.55 0.1
0
0.1
(3)
0
0.1
2) High speed. (trr=1.5ns Typ.)
3) Suitable for high packing density
layout.
0.13±0.05
0.32±0.05
+
0.1
+
0.15 0.05
1.2±0.1
−
0.3
−
0.05
(All pins have the same dimensions)
ROHM : VMD3
ROHM : EMD3
EIAJ : SC - 75
JEDEC : SOT - 416
4) High reliability.
EIAJ :
JEDEC :
DAN202U / DAP202U
DAN202K / DAP202K
zConstruction
Silicon epitaxial planar
+
2.9 0.2
−
+
0.2
+
2.0 0.2
1.1
−
−
0.1
+
1.9 0.2
+
−
0.9 0.1
−
+
1.3 0.1
−
0.95 0.95
+
0.8 0.1
−
zMarking
0.3
0.6
0
0.65 0.65
DAN222M
DAN222
DAN202U
DAN202K
(1)
(4)
(3)
0
0.1
0.1
N
+
0.1
+
0.1
0.05
(2)
0.15
0.4
−
0.06
−
+
0.15 0.05
−
+
0.3 0.1
−
DAP222M
(All pins have the same dimensions)
(All pins have the same dimensions)
DAP222
P
DAP202U
ROHM : UMD3
ROHM : SMD3
EIAJ : SC - 59
JEDEC : SOT - 346
DAP202K
EIAJ : SC - 70
JEDEC : SOT - 323
(3)
(4)
(2)
(1)
DA227
N20
DA227
+
1.25 0.1
−
0.6 0.65
+
+
+
0.3 0.1 0.2 0.1
0.9 0.1
−
−
−
0.7
(1)
(4)
0
0.1
(2)
(3)
+
+
0.2 0.1 0.2 0.1
−
−
0.65 0.65
+
−
0.15 0.05
+
1.3 0.1
−
+
2.0 0.2
−
ROHM : UMD4
EIAJ : SC - 82
JEDEC : SOT - 343
1/3
DAN222M/DAN222/DAN202U/DAN202K
DAP222M/DAP222/DAP202U/DAP202K
DA227
Diodes
zCircuits
(1)
(2)
(4)
(3)
DA227
DAN202K
DAN202U
DAN222
DAP202K
DAP202U
DAP222
DAN222M
DAP222M
zAbsolute maximum ratings (Ta=25°C)
Power
dissipation
(TOTAL)
Junction
temperature
Tj (ºC)
Storage
temperature
Tstg (ºC)
Peak reverse DC reverse Peak forward Mean rectifying Surge current
P / N
Type
voltage
voltage
current
current
(1µs)
Type
V
RM (V)
V
R
(V)
I
FM (mA)
I
O
(mA)
I
surge (A)
Pd(mW)
DAN202K
DAP202K
DAN202U
DAP202U
DAN222
DAP222
DAN222M
DAP222M
DA227
80
80
80
80
80
80
80
80
80
80
300
300
300
300
300
300
300
300
300
100
100
100
100
100
100
100
100
100
4
4
4
4
4
4
4
4
4
200
200
200
200
150
150
150
150
150
150
150
150
150
150
150
100
100
150
−55 to +150
−55 to +150
−55 to +150
−55 to +150
−55 to +150
−55 to +150
−55 to +150
−55 to +150
−55 to +150
N
P
N
P
N
P
N
P
N
80
80
80
80
80
80
80
80
zElectrical characteristics (Ta=25°C)
Forward voltage
Reverse current Capacitance between terminals
Reverse recovery time
Type
Cond.
Cond.
(V)
Cond.
Cond.
(ns)
V
Max.
F
(V)
I
R
(
µA
)
C
Max.
T
(
pF
)
t
rr
Max.
Max.
I
F
(mA
)
V
R
V
R
(V) f (MHz)
V
R
(V)
I
F
(
5
5
5
5
5
5
5
5
5
mA
)
DAN202K
DAP202K
DAN202U
DAP202U
DAN222
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
100
100
100
100
100
100
100
100
100
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
70
70
70
70
70
70
70
70
70
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
6
1
1
1
1
1
1
1
1
1
4
4
4
4
4
4
4
4
4
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
DAP222
DAN222M
DAP222M
DA227
2/3
DAN222M/DAN222/DAN202U/DAN202K
DAP222M/DAP222/DAP202U/DAP202K
DA227
Diodes
zElectrical characteristic curves (Ta=25°C)
125
1000
50
Ta=100ºC
20
100
75ºC
100
10
1
10
50ºC
25ºC
5
75
Ta=85ºC
50ºC
25ºC
2
0ºC
50
0ºC
1
0.5
−25ºC
−30ºC
25
0.1
0.2
0
0.1
0.010
10
REVERSE VOLTAGE : V
20
30
40
V)
50
0
25
50
75
100
125
150
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AMBIENT TEMPERATURE :Ta (ºC)
FORWARD VOLTAGE : VF (V)
R
(
Fig.1 Power attenuation curve
Fig.2 Forward characteristics
(P Type)
Fig.3 Reverse characteristics
(P Type)
50
1000
100
10
Ta=100°C
f=1MHz
20
10
5
4
2
75°C
50°C
Ta=85ºC
50ºC
25ºC
25°C
2
1
0°C
1
0ºC
P Type
N Type
−30ºC
0.5
−25°C
0.1
0.2
0.1
0
0
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
10 20 30 40 50 60 70 80
2
4
6
8
10 12 14 16 18 20
FORWARD VOLTAGE : V
F
(V)
REVERSE VOLTAGE : V V)
R
(
REVERSE VOLTAGE : V
R (V)
Fig.4 Forward characteristics
(N Type)
Fig.6 Capacitance between
terminals characteristics
Fig.5 Reverse characteristics
(N Type)
0.01µF
D.U.T.
10
9
8
7
6
5
4
3
2
1
0
VR=6V
5Ω
PULSE GENERATOR
SAMPLING
OSCILLOSCOPE
50Ω
OUTPUT 50Ω
INPUT
100ns
0
1
2
3
4
5
6
7
8
9
10
FORWARD CURRENT : I
F
(
mA)
Fig.7 Reverse recovery time
OUTPUT
t
rr
0
Fig.8 Reverse recovery time (trr) measurement circuit
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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