DAP222M3T5G [ONSEMI]
Common Anode Silicon Dual Switching Diodes; 共阳极硅双开关二极管
| 型号： | DAP222M3T5G |
| 厂家： | 
ONSEMI |
| 描述： | Common Anode Silicon Dual Switching Diodes |
| 文件： | 总4页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DAP222M3T5G
Preferred Device
Product Preview
Common Anode Silicon
Dual Switching Diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. The
DAP222 device is housed in the SOT−723 package which is designed
for low power surface mount applications, where board space is at a
premium.
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• Fast t
rr
• Low C
ANODE
3
D
• ESD Performance: Human Body Model; u 2000 V,
Machine Model u 200 V
• Available in 4 mm Tape and Reel
• This is a Pb−Free Device
1
2
MAXIMUM RATINGS (T = 25°C)
CATHODE
A
Rating
Reverse Voltage
Symbol
Value
80
Unit
V
MARKING
DIAGRAM
V
R
3
Peak Reverse Voltage
Forward Current
V
80
V
RM
SOT−723
CASE 631AA
STYLE 4
I
100
300
2.0
mA
mA
A
P9 M
F
2
Peak Forward Current
Peak Forward Surge Current
I
FM
1
I
FSM
(Note 1)
P9
M
= Specific Device Code
= Date Code
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Symbol
Max
260
Unit
mW
°C
ORDERING INFORMATION
P
D
†
Device
Package
Shipping
Junction Temperature
Storage Temperature
T
J
150
DAP222M3T5G
SOT−723
8000/Tape & Reel
T
stg
−55 ~ +150
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Preferred devices are recommended choices for future use
and best overall value.
1. t = 1.0 mS.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
March, 2005 − Rev. 1
DAP222M3/D
DAP222M3T5G
ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Characteristic
Reverse Voltage Leakage Current
Forward Voltage
Symbol
Condition
Min
−
Max
0.1
1.2
−
Unit
mA
V
I
R
V = 70 V
R
V
I = 100 mA
F
−
F
R
D
Reverse Breakdown Voltage
Diode Capacitance
V
C
I
R
= 100 mA
80
−
V
V
= 6.0 V, f = 1.0 MHz
3.5
4.0
pF
ns
R
Reverse Recovery Time
t
rr
I = 5.0 mA, V = 6.0 V, R = 100 W, I = 0.1 I
−
F
R
L
rr
R
(Note 2)
2. t Test Circuit for DAP222 in Figure 4.
rr
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2
DAP222M3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
10
100
10
T = 150°C
A
T = 85°C
A
T = 125°C
A
1.0
T = −ꢀ40°C
A
T = 85°C
A
0.1
0.01
T = 55°C
1.0
0.1
A
T = 25°C
A
T = 25°C
A
0.001
50
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Forward Voltage
Figure 2. Reverse Current
1.75
1.5
1.25
1.0
0.75
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Diode Capacitance
t
r
t
p
t
rr
I
F
t
t
10%
R
L
I = 0.1 I
rr
R
A
90%
I = 5.0 mA
F
V
= 6 V
R
V
R
R = 100 W
L
t = 2 ms
p
t = 0.35 ns
r
INPUT PULSE
OUTPUT PULSE
RECOVERY TIME EQUIVALENT TEST CIRCUIT
Figure 4. Reverse Recovery Time Test Circuit
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3
DAP222M3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
E
D
A
b1
−Y−
3
MILLIMETERS
INCHES
NOM MAX
0.018 0.020 0.022
HE
L
1
2
DIM MIN
NOM
0.50
0.21
0.31
0.12
MAX
0.55
0.27 0.0059 0.0083 0.0106
0.37 0.010 0.012 0.015
0.17 0.0028 0.0047 0.0067
MIN
A
b
b1
C
D
E
e
H E
L
0.45
0.15
0.25
0.07
1.15
0.75
b 2X
C
e
0.08 (0.0032) X Y
1.20
0.80
1.25
0.85
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.40 BSC
1.20
0.20
1.15
0.15
1.25
0.045 0.047 0.049
0.25 0.0059 0.0079 0.0098
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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DAP222M3/D
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