DAP222WM [ROHM]

Switching Diode; 开关二极管
DAP222WM
型号: DAP222WM
厂家: ROHM    ROHM
描述:

Switching Diode
开关二极管

二极管 开关
文件: 总4页 (文件大小:1155K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data Sheet  
Switching Diode  
DAP222WM  
lApplications  
lDimensions (Unit : mm)  
ꢀꢀlLand size figure (Unit : mm)  
High frequency switching  
1.0  
0.5  
0.5  
lFeatures  
0.7  
1)Ultra small mold type. (EMD3F)  
2)High reliability  
0.6  
0.6  
EMD3  
lConstruction  
Silicon epitaxial planer  
lStructure  
ROHM : EMD3F  
dot (year week factory)  
lTaping dimensions (Unit : mm)  
lAbsolute maximum ratings (Ta=25C)  
Parameter  
Reverse voltage (repetitive)  
Reverse voltage (DC)  
Limits  
Symbol  
VRM  
VR  
Unit  
V
80  
80  
300  
V
Forward voltage(repetitive peak)  
Average rectified forward current  
Surge current(t=1s)  
IFM  
mA  
mA  
A
100  
Io  
Isurge  
Pd  
4
Power dissipation  
150  
mW  
C  
C  
Junction temperature  
150  
Tj  
Storage temperature  
Tstg  
-55 to +150  
lElectrical characteristics (Ta=25C)  
Parameter  
Forward voltage  
Symbol  
Min.  
Typ.  
Max.  
1.2  
0.1  
3.5  
4
Unit  
V
Conditions  
VF  
IR  
IF=100mA  
VR=70V  
-
-
-
-
-
-
-
-
Reverse current  
μA  
pF  
ns  
Capacitance between terminals  
Reverse recovery time  
VR=6V , f=1MHz  
VR=6V , IF=5mA , RL=50Ω  
Ct  
trr  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.12 - Rev.A  
1/3  
Data Sheet  
DAP222WM  
100  
10  
1
100000  
10000  
1000  
100  
Ta=150°C  
Ta=125°C  
Ta=150°C  
Ta=75°C  
Ta=75°C  
Ta=125°C  
Ta=25°C  
0.1  
0.01  
Ta=25°C  
10  
1
0.1  
0.001  
0
10  
20  
30  
40  
50  
60  
70  
80  
0
100 200 300 400 500 600 700 800 900 1000  
REVERSE VOLTAGEVR(V)  
FORWARD VOLTAGEVF(mV)  
VR-IR CHARACTERISTICS  
VF-IF CHARACTERISTICS  
10  
910  
900  
890  
880  
870  
860  
850  
f=1MHz  
Ta=25°C  
IF=100mA  
n=30pcs  
1
AVE:884mV  
0.1  
0
5
10  
15  
20  
VF DISPERSION MAP  
REVERSE VOLTAGE:VR(V)  
VR-Ct CHARACTERISTICS  
50  
40  
30  
20  
10  
0
10  
9
Ta=25°C  
VR=70V  
n=10pcs  
Ta=25°C  
VR=0V  
f=1MHz  
n=10pcs  
8
7
AVE:11nA  
6
AVE:5.03pF  
5
4
IR DISPERSION MAP  
Ct DISPERSION MAP  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2/3  
2011.12 - Rev.A  
Data Sheet  
DAP222WM  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
IF=IR=100mA  
IRR=0.1IR  
1cyc  
IFSM  
8.3ms  
AVE:2.50A  
AVE:19.3ns  
0
IFSM DISPERSION MAP  
trr DISPERSION MAP  
5
4
3
2
1
100  
10  
1
IFSM  
IFSM  
t
8.3ms 8.3ms  
1cyc  
0
1
10  
100  
0.1  
1
10  
100  
TIME:t(ms)  
IFSM-t CHARACTERISTICS  
NUMBER OF CYCLES  
IFSM-CYCLE CHARACTERISTICS  
1000  
100  
10  
10  
9
8
7
6
5
4
3
2
1
0
Rth(j-a)  
Rth(j-c)  
AVE:2.98kV  
Mounted on epoxy board  
IM=100mA  
IF=10A  
AVE:1.47kV  
1ms  
time  
300us  
C=200pF  
R=0Ω  
C=100pF  
R=1.5kΩ  
0.001  
0.01  
0.1  
1
10  
100  
1000  
TIME:t(s)  
Rth-t CHARACTERISTICS  
ESD DISPERSION MAP  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
3/3  
2011.12 - Rev.A  
Notice  
N o t e s  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
R1120A  

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