DAP222WM [ROHM]
Switching Diode; 开关二极管型号: | DAP222WM |
厂家: | ROHM |
描述: | Switching Diode |
文件: | 总4页 (文件大小:1155K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
Switching Diode
DAP222WM
lApplications
lDimensions (Unit : mm)
ꢀꢀlLand size figure (Unit : mm)
High frequency switching
1.0
0.5
0.5
lFeatures
0.7
1)Ultra small mold type. (EMD3F)
2)High reliability
0.6
0.6
EMD3
lConstruction
Silicon epitaxial planer
lStructure
ROHM : EMD3F
dot (year week factory)
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Ta=25C)
Parameter
Reverse voltage (repetitive)
Reverse voltage (DC)
Limits
Symbol
VRM
VR
Unit
V
80
80
300
V
Forward voltage(repetitive peak)
Average rectified forward current
Surge current(t=1s)
IFM
mA
mA
A
100
Io
Isurge
Pd
4
Power dissipation
150
mW
C
C
Junction temperature
150
Tj
Storage temperature
Tstg
-55 to +150
lElectrical characteristics (Ta=25C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
1.2
0.1
3.5
4
Unit
V
Conditions
VF
IR
IF=100mA
VR=70V
-
-
-
-
-
-
-
-
Reverse current
μA
pF
ns
Capacitance between terminals
Reverse recovery time
VR=6V , f=1MHz
VR=6V , IF=5mA , RL=50Ω
Ct
trr
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.12 - Rev.A
1/3
Data Sheet
DAP222WM
ꢀ
100
10
1
100000
10000
1000
100
Ta=150°C
Ta=125°C
Ta=150°C
Ta=75°C
Ta=75°C
Ta=125°C
Ta=25°C
0.1
0.01
Ta=25°C
10
1
0.1
0.001
0
10
20
30
40
50
60
70
80
0
100 200 300 400 500 600 700 800 900 1000
REVERSE VOLTAGE:VR(V)
FORWARD VOLTAGE:VF(mV)
VR-IR CHARACTERISTICS
VF-IF CHARACTERISTICS
10
910
900
890
880
870
860
850
f=1MHz
Ta=25°C
IF=100mA
n=30pcs
1
AVE:884mV
0.1
0
5
10
15
20
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
50
40
30
20
10
0
10
9
Ta=25°C
VR=70V
n=10pcs
Ta=25°C
VR=0V
f=1MHz
n=10pcs
8
7
AVE:11nA
6
AVE:5.03pF
5
4
IR DISPERSION MAP
Ct DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.12 - Rev.A
Data Sheet
DAP222WM
ꢀ
20
15
10
5
50
40
30
20
10
0
IF=IR=100mA
IRR=0.1IR
1cyc
IFSM
8.3ms
AVE:2.50A
AVE:19.3ns
0
IFSM DISPERSION MAP
trr DISPERSION MAP
5
4
3
2
1
100
10
1
IFSM
IFSM
t
8.3ms 8.3ms
1cyc
0
1
10
100
0.1
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
100
10
10
9
8
7
6
5
4
3
2
1
0
Rth(j-a)
Rth(j-c)
AVE:2.98kV
Mounted on epoxy board
IM=100mA
IF=10A
AVE:1.47kV
1ms
time
300us
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
0.001
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.12 - Rev.A
Notice
N o t e s
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http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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