DAP222_11 [ROHM]
Switching Diode; 开关二极管
| 型号： | DAP222_11 |
| 厂家： | 
ROHM |
| 描述： | Switching Diode |
| 文件： | 总3页 (文件大小：992K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Switching Diode
DAP222
Applications
Dimensions(Unit : mm)
Land size figure (Unit : mm)
Ultra high speed switching
1.0
0.5
0.5
1.6±0.2
0.3±0.1
ꢀꢀꢀ 0.05
0.15±0.05
(3)
Features
0.7
1) Ultra small mold type. (EMD3)
2) High reliability.
0～0.1
0.6
EMD3
0.6
(1)
(2)
0.2±0.1
ꢀꢀ-0.05
0.55±0.1
0.7±0.1
0.5
1.0±0.1
0.5
Construction
Silicon epitaxial planar
Structure
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
Taping specifications(Unit : mm)
0.
φ1.5
2.0±0.05
0.3±0.1
4.0±0.1
0
1.8±0.1
φ0.5±0.1
0.9±0.2
Absolute maximum ratings(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Limits
Symbol
VRM
VR
Unit
V
80
80
300
V
IFM
Forward current (single)
Average rectified forward voltage (single)
Surge current （t=1us）
mA
mA
A
100
Io
Isurge
4
Power dissipation
150
Pd
Tj
mW
°C
°C
Junction temperature
150
Storage temperature
55 to 150
Tstg
Electrical characteristics(Ta=25°C)
Parameter
Conditions
Symbol
Min.
Typ.
Max.
1.2
0.1
3.5
4
Unit
V
Forward voltage
VF
IR
-
-
-
-
-
-
-
-
IF=100mA
Reverse current
μA
pF
ns
VR=70V
Capacitance between terminals
Reverse recovery time
Ct
trr
VR=6V , f=1MHz
VR=6V , IF=5mA , RL=50Ω
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© 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.06 - Rev.B
Data Sheet
DAP222
10000
1000
100
10
Ta=150℃
Ta=125℃
100
10
1
10
Ta=75℃
f=1MHz
Ta=125℃
Ta=75℃
Ta=25℃
Ta=25℃
Ta=150℃
1
1
Ta=25℃
Ta= 25℃
0.1
0.01
0.001
0.1
0.1
0
10
20
30
40
50
60
70
80
0
100 200 300 400 500 600 700 800 900 1000
0
5
10
15
20
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
900
890
880
870
860
850
10
9
8
7
6
5
4
3
2
1
0
Ta=25℃
IF=100mA
n=30pcs
Ta=25℃
VR=70V
n=10pcs
Ta=25℃
VR=6V
f=1MHz
n=10pcs
AVE:1.98pF
AVE:4.310nA
AVE:870.1mV
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
5
4
3
2
1
0
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
℃
Ta=25
Ifsm
Ifsm
1cyc
VR=6V
IF=5mA
RL=50Ω
n=10pcs
8.3ms 8.3ms
1cyc
8.3ms
AVE:2.50A
AVE:1.93ns
0
1
10
100
IFSM DISRESION MAP
trr DISPERSION MAP
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
100
10
10
9
8
7
6
5
4
3
2
1
0
100
10
1
Rth(j-a)
Ifsm
t
Rth(j-c)
Mounted on epoxy board
IM=100mA
IF=10A
AVE:2.98kV
AVE:1.47kV
1ms
time
300us
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
0.1
1
10
100
0.001 0.01
0.1
1
10
100
1000
TIME:t(ms)
TIME:t(s)
ESD DISPERSION MAP
IFSM-t CHARACTERISTICS
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.06 - Rev.B
2/2
Notice
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© 2011 ROHM Co., Ltd. All rights reserved.
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