DAP222M_11 [ROHM]
Switching Diode; 开关二极管
| 型号： | DAP222M_11 |
| 厂家： | 
ROHM |
| 描述： | Switching Diode |
| 文件： | 总3页 (文件大小：1002K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Switching Diode
DAP222M
Applications
Dimensions (Unit : mm)
Land size figure (Unit : mm)
Ultra high speed switching
0.8
1.2±0.1
0.13±0.05
0.32±0.05
0.5
0.4
(3)
Features
1) Ultra small mold type. (VMD3)
2) High reliability.
0～0.1
0.4
VMD3
(1)
0.4
(2)
0.22±0.05
0.4
0.22±0.05
0.5±0.05
Construction
Silicon epitaxial planar
Structure
ROHM : VMD3
dot (year week factory)
Taping specifications (Unit : mm)
0.3±0.1
2.0±0.04
4.0±0.07
φ1.55±0.05
φ0.5±0.05
0.6±0.05
(4.0±0.1)
2.0±0.05
1.3±0.05
ꢀꢀꢀ 0
0
Absolute maximum ratings (Ta=25°C)
Parameter
Limits
80
Symbol
VRM
VR
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
V
V
80
Forward voltage (Single)
Average rectified forward current (Single)
Surge current (t=1us)
IFM
300
100
4
mA
mA
A
Io
Isurge
Pd
Power dissipation
150
150
mW
°C
Junction temperature
Tj
Storage temperature
55 to 150
Tstg
°C
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
1.2
0.1
3.5
4
Unit
V
Conditions
VF
IR
IF=100mA
-
-
-
-
-
-
-
-
Reverse current
VR=70V
μA
pF
ns
Capacitance between terminals
Reverse recovery time
VR=6V , f=1MHz
VR=6V , IF=5mA , RL=50Ω
Ct
trr
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.06 - Rev.B
1/2
Data Sheet
DAP222M
ꢀ
10
100
10
1
10000
1000
100
10
Ta=125℃
Ta=150℃
Ta=75℃
Ta=125℃
Ta=150℃
f=1MHz
Ta=75℃
Ta=25℃
Ta=25℃
1
Ta=-25℃
Ta=-25℃
1
0.1
0.01
0.001
0.1
0.1
0
10 20 30 40 50 60 70 80
0
100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0
5
10
15
REVERSE VOLTAGE:VR(V)
20
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
VR-Ct CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
900
890
880
870
860
850
10
Ta=25℃
IF=100mA
n=30pcs
Ta=25℃
VR=70V
n=10pcs
Ta=25℃
9
8
7
6
5
4
3
2
1
0
VR=6V
f=1MHz
n=10pcs
AVE:4.310nA
AVE:870.1mV
AVE:1.81pF
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
5
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
Ifsm
1cyc
8.3ms
Ifsm
4
3
2
1
0
8.3ms 8.3ms
1cyc
AVE:2.50A
AVE:1.93ns
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
IFSM DISRESION MAP
trr DISPERSION MAP
10
9
8
7
6
5
4
3
2
1
0
1000
100
10
Rth(j-a)
Rth(j-c)
100
10
1
Ifsm
t
Mounted on epoxy board
AVE:2.98kV
AVE:1.47kV
IM=10mA
IF=100mA
time
10
1ms
300us
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
0.1
1
10
100
0.001 0.01
0.1
1
TIME:t(s)
100 1000
TIME:t(ms)
IFSM-t CHARACTERISTICS
ESD DISPERSION MAP
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.06 - Rev.B
Notice
N o t e s
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More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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