DTM4435_13 [DINTEK]
P-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET; P通道30 -V （ DS ） MOSFET TrenchFET功率MOSFET
| 型号： | DTM4435_13 |
| 厂家： | 
DinTek Semiconductor Co,.Ltd |
| 描述： | P-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET |
| 文件： | 总8页 (文件大小：1542K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTM4435
www.din-tek.jp
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 30
FEATURES
R
DS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 4.5 V
D (A)
Configuration
0.016
0.022
- 8
•
Halogen-free According to IEC 61249-2-21
Definition
•
•
•
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
Compliant to RoHS Directive 2002/95/EC
I
Single
APPLICATIONS
•
Adaptor Switch
•
Notebook
S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
D
P-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
- 30
UNIT
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
T
C = 25 °C
- 8
ID
Continuous Drain Current
TC = 125 °C
- 6.7
- 6.2
- 60
IS
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
A
IDM
IAS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
- 25
L = 0.1 mH
EAS
31
mJ
W
TC = 25 °C
6.8
Maximum Power Dissipationa
PD
TC = 125 °C
2.3
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
85
UNIT
PCB Mountb
Junction-to-Ambient
°C/W
RthJF
Junction-to-Foot (Drain)
22
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 80 °C/W.
d. Based on TC = 25 °C.
1
DTM4435
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0, ID = - 250 μA
- 30
-
-
V
VDS = VGS, ID = - 250 μA
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS
=
20 V
-
-
100
- 1
nA
μA
A
VGS = 0 V
VGS = 0 V
VDS = - 30 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
VDS = - 30 V, TJ = 125 °C
-
-
- 50
- 150
-
VGS = 0 V
VDS = - 30 V, TJ = 175 °C
-
-
ID(on)
VGS = - 10 V
VGS = - 10 V
VDS- 5 V
- 30
-
0.013
-
ID = - 8 A
-
-
-
-
-
0.016
0.026
0.030
0.022
-
V
GS = - 10 V
GS = - 10 V
I
I
D = - 8 A, TJ = 125 °C
D = - 8 A, TJ = 175 °C
ID = - 6 A
Drain-Source On-State Resistancea
RDS(on)
V
-
VGS = - 4.5 V
0.016
22
Forward Transconductanceb
Dynamicb
gfs
VDS = - 15 V, ID = - 8 A
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
2
-
-
-
-
1736
392
268
38.3
5.9
9
2170
490
335
58
-
VGS = 0 V
V
DS = - 15 V, f = 1 MHz
pF
Qgs
Qgd
Rg
V
GS = - 10 V
VDS = - 15 V, ID = - 4.6 A
f = 1 MHz
nC
-
-
7
td(on)
tr
td(off)
tf
12.5
9
19
15
68
15
V
DD = - 15 V, RL = 15
ns
ID - 1 A, VGEN = - 10 V, Rg = 1
45.3
10
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
- 60
A
V
Forward Voltage
VSD
IF = - 8 A, VGS = 0
- 0.84
- 1.2
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTM4435
www.din-tek.jp
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
30
20
10
5
50
40
30
20
10
0
VGS = 10 V thru 5 V
V
GS = 4 V
TC = 25 °C
2
TC = 125 °C
VGS = 3 V
TC = - 55 °C
0
0
2
4
6
8
10
50
50
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
40
32
24
16
8
0.05
0.04
0.03
0.02
0.01
0.00
TC = 25 °C
TC = - 55 °C
VGS = 4.5 V
TC = 125 °C
VGS = 10 V
0
0
5
10
15
20
25
0
10
20
30
40
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
10
8
3000
2500
2000
1500
1000
500
ID = 4.6 A
Ciss
6
4
Coss
2
Crss
0
0
0
10
20
30
40
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
3
DTM4435
www.din-tek.jp
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
1.7
1.4
1.1
0.8
0.5
100
10
ID = 8 A
VGS = 10 V
TJ = 150 °C
1
TJ = 25 °C
0.1
VGS = 4.5 V
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 50 - 25
0
25
50
75 100 125 150 175
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
1.0
0.7
- 30
- 32
- 34
- 36
- 38
- 40
ID = 1 mA
ID = 250 μA
0.4
ID = 5 mA
0.1
- 0.2
- 0.5
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Temperature (°C)
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
I
Limited
DM
10
5
100 µs
Limited by
DS(on)*
R
1 ms
10 ms
1
100 ms
1 s
10 s, DC
0.1
T
= 25 °C
C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V at which R is specified
GS
DS(on)
Safe Operating Area
4
DTM4435
www.din-tek.jp
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
1
1. Duty Cycle, D =
0.02
t
2
2. Per Unit Base = R
= 85 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
5
Package Information
www.din-tek.jp
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
q
e
B
A
1
L
0.004"
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
1
Application Note
www.din-tek.jp
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
1
Legal Disclaimer Notice
www.din-tek.jp
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
1
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