DTM4483S [DINTEK]
P-Channel 30 V (D-S) MOSFET with Schottky Diode; P沟道30 V （ D- S）的MOSFET与肖特基二极管
| 型号： | DTM4483S |
| 厂家： | 
DinTek Semiconductor Co,.Ltd |
| 描述： | P-Channel 30 V (D-S) MOSFET with Schottky Diode |
| 文件： | 总11页 (文件大小：2149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTM4483S
www.din-tek.jp
P-Channel 30 V (D-S) MOSFET with Schottky Diode
FEATURES
MOSFET PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
ID (A)a
VDS (V)
RDS(on) ()
Qg (Typ.)
•
•
•
LITTLE FOOT® Plus Power MOSFET
100 % Rg Tested
0.068 at VGS = - 10 V
0.110 at VGS = - 4.5 V
- 4.6
- 30
4.6
- 3.4
Compliant to RoHS Directive 2002/95/EC
SCHOTTKY PRODUCT SUMMARY
APPLICATIONS
VF (V)
•
Battery Management in Notebook PC
VKA (V)
Diode Forward Voltage
I
D (A)a
•
Non-synchronous Buck Converter in HDD
30
0.44 V at 1 A
2
S
K
SO-8
A
A
S
G
K
K
D
D
1
2
3
4
8
7
6
5
G
A
D
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
VDS
Limit
- 30
- 30
20
Unit
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
VKA
V
VGS
TC = 25 °C
TC = 70 °C
- 4.6
- 3.6
- 3.8b, c
- 3b, c
- 20
ID
Continuous Drain Current (TJ = 150 °C) (MOSFET)
T
A = 25 °C
TA = 70 °C
IDM
IS
Pulsed Drain Current (MOSFET) (t = 300 µs)
A
T
C = 25 °C
A = 25 °C
- 2
Continuous Source Current (MOSFET Diode Conduction)
- 1.4b, c
- 1.4b
- 2
T
IF
IFM
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
TC = 25 °C
2.75
T
C = 70 °C
A = 25 °C
1.75
PD
W
Maximum Power Dissipation (MOSFET and Schottky)
Operating Junction and Storage Temperature Range
1.75b, c
1.10b, c
T
TA = 70 °C
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJF
Typical
60
Maximum
Unit
Maximum Junction-to-Ambient (MOSFET and Schottky)b, c, d
Maximum Junction-to-Foot (Drain) (MOSFET and Schottky)
71.5
45
°C/W
35
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on FR4 board.
c. t 10 s.
d. Maximum under steady state conditions is 120 °C/W.
1
DTM4483S
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MOSFET SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VDS = 0 V, ID = - 250 µA
ID = - 250 µA
- 30
V
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
- 20
3.9
mV/°C
V
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
GS(th)/TJ
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
- 1
- 5
- 1.8
- 2.5
100
- 1
V
VDS = 0 V, VGS
=
20 V
nA
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 75 °C
VDS - 5 V, VGS = - 10 V
IDSS
ID(on)
RDS(on)
gfs
µA
A
Zero Gate Voltage Drain Current
On-State Drain Currenta
- 10
VGS = - 10 V, ID = - 3.6 A
0.055
0.092
6.5
0.068
0.110
Drain-Source On-State Resistancea
S
V
GS = - 4.5 V, ID = - 2.8 A
Forward Transconductancea
Dynamicb
VDS = - 15 V, ID = - 3.6 A
Ciss
Coss
Crss
350
75
63
9
Input Capacitance
VDS = - 15 V, VGS = 0 V, f = 1 MHz
pF
Output Capacitance
Reverse Transfer Capacitance
V
DS = - 15 V, VGS = - 10 V, ID = - 5 A
DS = - 15 V, VGS = - 4.5 V, ID = - 5 A
f = 1 MHz
14
7
Qg
Total Gate Charge
4.6
1.3
2.1
7.3
28
73
12
8
nC
Qgs
Qgd
Rg
V
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
1.5
14.5
50
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
140
24
V
DD = - 15 V, RL = 3
ID - 5 A, VGEN = - 4.5 V, Rg = 1
Turn-Off Delay Time
Fall Time
16
ns
6
12
Turn-On Delay Time
Rise Time
9
18
VDD = - 15 V, RL = 3
ID - 5 A, VGEN = - 10 V, Rg = 1
12
6
24
Turn-Off Delay Time
Fall Time
12
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
- 4.6
- 20
- 1.2
24
A
Pulse Diode Forward Currenta
Body Diode Voltage
IS = - 2 A, VGS = 0 V
- 0.83
V
12
6
ns
nC
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Qrr
ta
12
IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C
8
ns
tb
4
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
2
DTM4483S
www.din-tek.jp
SCHOTTKY SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
0.36
0.29
0.03
0.6
Max.
0.44
0.35
0.2
Unit
IF = 1 A
VF
Forward Voltage Drop
V
IF = 1 A, TJ = 125 °C
VR = 30 V
Irm
CT
Maximum Reverse Leakage Current
Junction Capacitance
VR = 30 V, TJ = 75 °C
5
mA
pF
V
R = 30 V, TJ = 125 °C
VR = 15 V
7.5
60
5.3
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
3
DTM4483S
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MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
16
12
8
3.0
2.5
2.0
1.5
1.0
0
VGS = 10 V thru 5 V
VGS = 4 V
TC = 25 °C
4
VGS = 3 V
TC = 125 °C
TC = - 55 °C
0
0.0
1.0
2.0
3.0
4.0
5.0
0.0
1.0
2.0
3.0
4.0
5.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
600
480
360
240
120
0
0.150
0.120
0.090
0.060
0.030
0.000
VGS = 4.5 V
Ciss
VGS = 10 V
Coss
Crss
0
2
4
6
8
10
0
6
12
18
24
30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.5
1.3
1.1
0.9
0.7
0.5
ID = 5 A
ID = 3.6 A
VGS = 10 V
8
VDS = 15 V
VGS = 4.5 V
6
VDS = 10 V
VDS = 20 V
4
2
0
- 50
- 25
0
25
50
75
100 125
150
0
2
4
6
8
10
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
4
DTM4483S
www.din-tek.jp
MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.5
0.4
0.3
0.2
0.1
0.0
ID = 3.6 A
1
TJ = 150 °C
TJ = 25 °C
0.1
0.01
TJ = 125 °C
TJ = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
0.4
0.2
50
40
30
20
10
0
ID = 250 μA
ID = 5 mA
0
- 0.2
- 0.4
0.001
0.01
0.1
1
10
- 50 - 25
0
25
50
75
100 125 150
Time (s)
TJ - Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
10
IDM Limited
ID Limited
1 ms
1
0.1
10 ms
Limited by RDS(on)
*
100 ms
1 s
10 s
DC
TC = 25 °C
BVDSS Limited
10
Single Pulse
0.01
0.01
0.1
1
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
5
DTM4483S
www.din-tek.jp
MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
6
4
3
2
1
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
3.5
2.8
2.1
1.4
0.7
0.0
1.25
1.00
0.75
0.50
0.25
0.00
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
6
DTM4483S
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MOSFETS TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 120 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
4. Surface Mounted
Single Pulse
0.001
0.01
0.0001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
7
DTM4483S
www.din-tek.jp
SCHOTTKY TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.1
10
0.01
1
T
= 150 °C
J
20 V
0.001
T
= 25 °C
30 V
J
0.1
0.01
0.0001
0.00001
0.000001
0.001
0
0.1
0.2
- Forward Voltage Drop (V)
F
0.3
0.4
0.5
0
25
50
75
100
125
150
T
- Junction Temperature (°C)
V
J
Forward Voltage Drop
Reverse Current vs. Junction Temperature
500
400
300
200
100
0
0
6
12
18
24
30
V
KA
- Reverse Voltage (V)
Capacitance
8
Package Information
www.din-tek.jp
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
q
e
B
A
1
L
0.004"
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
1
Application Note
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RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
1
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
1
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