DTM4485 [DINTEK]
P-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET; P通道30 -V （ DS ） MOSFET TrenchFET功率MOSFET
| 型号： | DTM4485 |
| 厂家： | 
DinTek Semiconductor Co,.Ltd |
| 描述： | P-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET |
| 文件： | 总9页 (文件大小：1689K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTM4485
www.din-tek.jp
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a, e
- 6
Definition
TrenchFET® Power MOSFET
100 % Rg Tested
0.042 at VGS = - 10 V
0.072 at VGS = - 4.5 V
•
•
•
- 30
7 nC
- 6
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
•
Load Switch
Notebook Adaptor Switch
S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 30
V
VGS
20
- 6e
- 6e
- 5.9b, c
- 4.7b, c
- 25
T
C = 25 °C
C = 70 °C
T
Continuous Drain Current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
A
Pulsed Drain Current
IDM
IS
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
- 4.2
- 2b, c
Continous Source-Drain Diode Current
5
3.2
Maximum Power Dissipation
PD
W
2.4b, c
1.5b, c
- 55 to 150
TJ, Tstg
°C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Symbol
Typical
42
Maximum
Unit
RthJA
RthJF
t ≤ 10 s
Steady State
53
25
°C/W
Maximum Junction-to-Foot (Drain)
19
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
e. Package Limited.
1
DTM4485
www.din-tek.jp
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 30
V
VDS Temperature Coefficient
- 19
4.4
mV/°C
VGS(th) Temperature Coefficient
VDS = VGS , ID = - 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
- 1.2
- 25
- 2.5
100
- 1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS ≤ - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 5.9 A
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
- 5
0.035
0.060
10
0.042
0.072
Drain-Source On-State Resistancea
Forward Transconductancea
Ω
S
VGS = - 4.5 V, ID = - 4.5 A
VDS = - 15 V, ID = - 5.9 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
590
115
93
13.6
7
VDS = - 15 V, VGS = 0 V, f = 1 MHz
DS = - 15 V, VGS = - 10 V, ID = - 5.9 A
pF
V
21
11
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
2.3
3.2
5
VDS = - 15 V, VGS = - 4.5 V, ID = - 5.9 A
f = 1 MHz
Gate-Drain Charge
Gate Resistance
1
10
45
38
24
16
16
20
27
16
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
30
25
16
8
Rise Time
V
DD = - 15 V, RL = 3.2 Ω
ID ≅ - 4.7 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
8
Rise Time
10
18
8
V
DD = - 15 V, RL = 3.2 Ω
ID ≅ - 4.7 A, VGEN = - 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
- 4.2
- 25
- 1.2
26
A
IS = - 4.7 A, VGS = 0 V
- 0.8
17
9
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
18
IF = - 4.7 A, dI/dt = 100 A/µs, TJ = 25 °C
10
7
ns
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTM4485
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
3.0
2.4
1.8
1.2
0.6
0.0
V
GS
= 5 V
V
= 10 V thru 6 V
GS
20
15
10
5
V
= 4 V
GS
T
C
= 25 °C
V
GS
= 3 V
T
C
= 125 °C
2
T
C
= - 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25
15
0
1
3
4
V - Gate-to-Source Voltage (V)
GS
V
- Drain-to-Source Voltage (V)
DS
Output Characteristics
Transfer Characteristics
0.10
0.08
0.06
0.04
0.02
0.00
1000
800
600
400
200
0
V
GS
= 4.5 V
C
iss
V
= 10 V
GS
C
oss
C
rss
0
5
10
15
20
0
5
10
15
20
V
- Drain-to-Source Voltage (V)
I
- Drain Current (A)
DS
D
On-Resistance vs. Drain Current
Capacitance
10
8
1.7
1.5
1.3
1.1
0.9
0.7
I
= 5.9 A
I = 5.9 A
D
D
V
DS
= 15 V
V
= 10 V
GS
V
DS
= 8 V
6
V
GS
= 4.5 V
V
DS
= 24 V
4
2
0
0
3
6
9
12
- 50 - 25
0
25
- Junction Temperature (°C)
J
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
g
Gate Charge
On-Resistance vs. Junction Temperature
3
DTM4485
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
100
I
= 5.9 A
D
0.08
0.06
0.04
0.02
T
= 150 °C
J
10
T
J
= 25 °C
T
= 125 °C
J
1
T
= 25 °C
J
0.1
0.0
2
4
6
8
10
0.3
0.6
0.9
1.2
1.5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
2.2
2.0
1.8
1.6
1.4
1.2
I
= 250 µA
D
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
Time (s)
T
J
- Temperature (°C)
Single Pulse Power (Junction-to-Ambient)
Threshold Voltage
100
Limited by R
*
DS(on)
10
100 µs
1 ms
1
10 ms
100 ms
1 s
0.1
10 s
DC
T
A
= 25 °C
BVDSS Limited
Single Pulse
0.01
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
4
DTM4485
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
8
Package Limited
6
4
2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
6
5
4
3
2
1
0
2.0
1.5
1.0
0.5
0.0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
DTM4485
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
t
0.05
0.02
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 70 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
6
Package Information
www.din-tek.jp
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
q
e
B
A
1
L
0.004"
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
1
Application Note
www.din-tek.jp
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
1
Legal Disclaimer Notice
www.din-tek.jp
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Din-Tek’s knowledge of typical
requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death.
Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
1
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