DTM4483 [DINTEK]
P-Channel 30 V (D-S) MOSFET ESD Protection: 3000 V; P沟道30 V （ DS ） MOSFET ESD保护： 3000 V
| 型号： | DTM4483 |
| 厂家： | 
DinTek Semiconductor Co,.Ltd |
| 描述： | P-Channel 30 V (D-S) MOSFET ESD Protection: 3000 V |
| 文件： | 总9页 (文件大小：1735K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTM4483
www.din-tek.jp
P-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET® Power MOSFET
PRODUCT SUMMARY
VDS (V)
- 30
0.0085
0.0200
- 22
• ESD Protection: 3000 V
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedc
R
DS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 4.5 V
D (A)
Configuration
I
Single
S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
D
Top View
P-Channel MOSFET
ORDERING INFORMATION
Package
SO-8
DTM4483
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
- 30
V
VGS
20
T
C = 25 °C
- 22
Continuous Drain Current
ID
TC = 125 °C
- 13
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
IS
- 6
A
IDM
IAS
- 84
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
- 50
L = 0.1 mH
EAS
125
mJ
W
TC = 25 °C
7
Maximum Power Dissipationa
PD
TC = 125 °C
2
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
85
UNIT
Junction-to-Ambient
PCB Mountb
°C/W
Junction-to-Foot (Drain)
RthJF
21
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
1
DTM4483
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = - 250 μA
VDS = VGS, ID = - 250 μA
- 30
-
-
V
VGS(th)
- 1.5
- 2.0
- 2.5
V
DS = 0 V, VGS
=
=
20 V
12 V
-
-
-
-
-
-
-
1
2
mA
μA
A
Gate-Source Leakage
IGSS
VDS = 0 V, VGS
-
VGS = 0 V
VGS = 0 V
VDS = - 30 V
-
- 1
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
VDS = - 30 V, TJ = 125 °C
-
- 50
- 150
-
V
GS = 0 V
VGS = - 10 V
VDS = - 30 V, TJ = 175 °C
VDS- 5 V
-
ID(on)
- 30
V
GS = - 10 V
GS = - 10 V
ID = - 10 A
-
-
-
-
-
0.0070 0.0085
V
ID = - 10 A, TJ = 125 °C
ID = - 10 A, TJ = 175 °C
ID = - 7 A
-
-
0.0130
0.0150
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V
VGS = - 4.5 V
0.0160 0.0200
Forward Transconductanceb
Dynamicb
gfs
VDS = - 10 V, ID = - 10 A
32
-
S
Output Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Coss
Qg
VGS = 0 V
VDS = - 15 V, f = 1 MHz
VDS = - 15 V, ID = - 10 A
f = 1 MHz
-
-
-
-
6
-
-
-
-
712
75
890
113
-
pF
nC
Qgs
Qgd
Rg
VGS = - 10 V
9.5
19
-
12.82
38
20
td(on)
tr
td(off)
tf
57
82
123
201
214
V
DD = - 15 V, RL = 1.5
ns
Turn-Off Delay Timec
Fall Timec
134
178
ID - 10 A, VGEN = - 10 V, Rg = 1
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
- 84
A
V
Forward Voltage
VSD
IF = - 3 A, VGS = 0 V
- 0.75
- 1.2
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTM4483
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
-2
-3
-4
-5
-6
-7
-8
-9
10
0.005
0.004
0.003
0.002
0.001
0.000
10
10
10
10
10
10
10
T = 25 °C
J
TJ = 150 °C
TJ = 25 °C
-10
10
0
6
12
18
24
30
0
7
14
21
28
35
VGS - Gate-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
50
40
30
20
10
0
80
60
40
20
0
VGS = 10 V thru 4 V
VGS = 3 V
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0
1
2
3
4
5
0
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3000
2400
1800
1200
600
0.05
0.04
0.03
0.02
0.01
0.00
VGS = 4.5 V
Coss
VGS = 10 V
0
0
5
10
15
20
25
30
0
14
28
42
56
70
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
3
DTM4483
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
10
ID = 10 A
1.7
1.4
1.1
0.8
0.5
8
ID = 10 A
VGS = 10 V
V
= 15 V
DS
6
VGS = 4.5 V
4
2
0
- 50 - 25
0
25
50
75 100 125 150 175
0
20
40
60
80
100
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
0.10
0.08
0.06
0.04
0.02
0.00
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
TJ = 150 °C
TJ = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
- 30
- 32
- 34
- 36
- 38
- 40
1.0
ID = 1 mA
0.7
0.4
ID = 250 μA
ID = 5 mA
0.1
- 0.2
- 0.5
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Temperature (°C)
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
4
DTM4483
www.din-tek.jp
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
100
100 μs
1 ms
Limited by RDS(on)
*
10
10 ms
1
100 ms
1 s
10 s, DC
TC = 25 °C
Single Pulse
0.1
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 85 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
10
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
5
DTM4483
www.din-tek.jp
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
6
Package Information
www.din-tek.jp
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
q
e
B
A
1
L
0.004"
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
1
Application Note
www.din-tek.jp
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
1
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Disclaimer
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“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
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