DTM4459 [DINTEK]
P-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET; P通道30 -V （ DS ） MOSFET TrenchFET功率MOSFET
| 型号： | DTM4459 |
| 厂家： | 
DinTek Semiconductor Co,.Ltd |
| 描述： | P-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET |
| 文件： | 总9页 (文件大小：1551K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTM4459
www.din-tek.jp
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
VDS (V)
RDS(on) ()
Qg (Typ.)
I
D (A)d
•
•
•
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
0.005 at VGS = - 10 V
- 29
- 23
- 30
61 nC
0.00775 at VGS = - 4.5 V
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
Adaptor Switch
•
Notebook
SO-8
S
S
S
S
G
1
2
3
4
8
7
6
5
D
D
G
D
D
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
VDS
Limit
- 30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
T
C = 25 °C
- 29
TC = 70 °C
TA = 25 °C
TA = 70 °C
- 23.5
- 19.7a, b
- 15.6a, b
- 70
Continuous Drain Current (TJ = 150 °C)
ID
A
IDM
IS
Pulsed Drain Current
- 6.5
- 2.9a, b
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
IAS
Avalanche Current
- 30
L = 0.1 mH
EAS
Single-Pulse Avalanche Energy
45
mJ
W
TC = 25 °C
TC = 70 °C
7.8
5
PD
Maximum Power Dissipation
3.5a, b
2.2a, b
- 55 to 150
T
A = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJF
Typical
29
13
Maximum
35
16
Unit
°C/W
Maximum Junction-to-Ambienta, c
t 10 s
Steady State
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 80 °C/W.
d. Based on TC = 25 °C.
1
DTM4459
www.din-tek.jp
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 30
V
mV/°C
V
V
DS Temperature Coefficient
- 31
5.3
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = - 250 µA
- 1
- 2.5
100
- 100
- 75
- 10
- 3
IGSS
VDS = 0 V, VGS
VDS = - 30 V, VGS = 0 V
DS = - 20 V, VGS = 0 V
DS = - 30 V, VGS = 0 V, TJ = 75 °C
=
20 V
nA
V
IDSS
Zero Gate Voltage Drain Current
V
µA
A
VDS = - 20 V, VGS = 0 V, TJ = 75 °C
On-State Drain Currenta
ID(on)
RDS(on)
gfs
VDS - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 15 A
VGS = - 4.5 V, ID = - 10 A
VDS = - 10 V, ID = - 15 A
- 30
0.0039
0.0062
24
0.005
Drain-Source On-State Resistancea
S
0.00775
Forward Transconductancea
Dynamicb
Ciss
Coss
Crss
Input Capacitance
6000
860
790
129
61
VDS = - 15 V, VGS = 0 V, f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
pF
V
DS = - 15 V, VGS = - 10 V, ID = - 20 A
VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A
f = 1 MHz
195
95
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
16.5
23.5
3
0.6
6
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
16
30
VDD = - 15 V, RL = 1.5
ID - 10 A, VGEN = - 10 V, Rg = 1
16
30
Turn-Off DelayTime
Fall Time
80
150
40
20
ns
Turn-On Delay Time
Rise Time
75
150
260
120
80
VDD = - 15 V, RL = 1.5
ID - 10 A, VGEN = - 4.5 V, Rg = 1
130
60
Turn-Off DelayTime
Fall Time
40
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
IS
ISM
VSD
trr
TC = 25 °C
- 29
- 70
- 1.2
130
150
A
Body Diode Voltage
IS = - 3 A, VGS = 0 V
- 0.71
67
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
74
IF = - 5 A, dI/dt = 100 A/µs, TJ = 25 °C
22
ns
Reverse Recovery Rise Time
tb
45
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTM4459
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
4.0
3.2
2.4
1.6
0.8
0.0
70
56
42
28
14
0
V
= 10 thru 4 V
GS
T
= 125 °C
= 25 °C
C
V
= 3 V
GS
T
C
T
C
= - 55 °C
3.2
0
1
2
3
4
5
0.0
0.8
1.6
2.4
4.0
V
- Drain-to-Source Voltage (V)
DS
V
- Gate-to-Source Voltage (V)
GS
Output Characteristics
Transfer Characteristics
0.008
0.007
0.006
0.005
0.004
0.003
9000
7200
5400
3600
1800
0
C
V
= 4.5 V
iss
GS
V
= 10 V
GS
C
oss
C
rss
0
6
12
18
24
30
0
14
28
42
56
70
V
DS
- Drain-to-Source Voltage (V)
I
- Drain Current (A)
D
On-Resistance vs. Drain Current
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
10
8
I
= 20 A
D
I
= 15 A
D
V
= 10 V
DS
V
GS
= 10 V
V
= 15 V
DS
V
DS
= 20 V
6
V
= 4.5 V
GS
4
2
0
- 50 - 25
0
25
50
75
100 125 150
0
30
60
90
120
150
T
J
- Junction Temperature (°C)
Q
- Total Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
3
DTM4459
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.030
0.024
0.018
0.012
0.006
0.000
100
10
1
I
= 15 A
D
T
= 150 °C
T
= 25 °C
J
J
0.1
0.01
T
= 125 °C
J
T
= 25 °C
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
- Source-to-Drain Voltage (V)
V
- Gate-to-Source Voltage (V)
SD
GS
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
0.6
200
160
120
80
I
= 250 µA
D
0.4
I
= 5 mA
D
0.2
0.0
40
- 0.2
- 0.4
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (s)
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
*
DS(on)
1 ms
10
10 ms
1
100 ms
1 s
10 s
0.1
DC
BVDSS
T
A
= 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area
4
DTM4459
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
35
28
21
14
7
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
2.0
1.6
1.2
0.8
0.4
0.0
10
8
6
4
2
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Power, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
DTM4459
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 80 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-3
-2
-1
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
6
Package Information
www.din-tek.jp
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
q
e
B
A
1
L
0.004"
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
1
Application Note
www.din-tek.jp
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
1
Legal Disclaimer Notice
www.din-tek.jp
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Din-Tek’s knowledge of typical
requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
1
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