MTB135C10N8J-0-T1-G [CYSTEKEC]
N-AND P-Channel Enhancement Mode MOSFET;
| 型号： | MTB135C10N8J-0-T1-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-AND P-Channel Enhancement Mode MOSFET |
| 文件： | 总13页 (文件大小：407K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C009N8J
Issued Date : 2018.08.23
Revised Date :
CYStech Electronics Corp.
N- AND P-Channel Enhancement Mode MOSFET
MTB135C10N8J
age No. : 1/13
N-CH
100V
2A
P-CH
-100V
-1.6A
BVDSS
ID@VGS=10V(-10V), TA=25ꢀC
RDSON@VGS=10V(-10V) typ.
127mΩ
156mΩ
189mΩ
225mΩ
RDSON@VGS=4.5V(-4.5V) typ.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
2928-8J
MTB135C10N8J
Pin 1
G：Gate S：Source D：Drain
Ordering Information
Device
Package
Shipping
2928-8J
(Pb-free lead plating and halogen-free package)
MTB135C10N8J-0-T1-G
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB135C10N8J
CYStek Product Specification
Spec. No. : C009N8J
Issued Date : 2018.08.23
Revised Date :
CYStech Electronics Corp.
age No. : 2/13
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Limits
N-channel P-channel
Parameter
Drain-Source Breakdown Voltage
Symbol
Unit
V
BVDSS
VGS
100
ꢁ20
2.0
1.6
3.0
1.9
10
-100
ꢁ20
-1.6
-1.3
-2.4
-1.5
-9
Gate-Source Voltage
TA=25 C, VGS=10V (-10V)
TA=70 C, VGS=10V (-10V)
TC=25 C, VGS=10V (-10V)
TC=100 C, VGS=10V (-10V)
Continuous Drain Current *2
ID
A
Continuous Drain Current
Pulsed Drain Current * 3
ID
IDM
TA=25ꢀC, Single device operation
1.38 *2
TA=70ꢀC, Single device operation
TA=25ꢀC, Single device value at dual operation
TA=70ꢀC, Single device value at dual operation
TC=25ꢀC
0.88 *2
1.24 *2
0.79 *2
3.75
PDSM
Total Power
Dissipation
W
PD * 1
TC=100ꢀC
1.88
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+150
C
Thermal Data
Parameter
Symbol Value
Unit
Max. Thermal Resistance, Junction-to-ambient, single device operation
Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation
Max. Thermal Resistance, Junction-to-case
90 *2
101 *2
40
Rth,j-a
C/W
Rth,j-c
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
°
°
environment with TA=25 C, t≤10s. 210 C/W when mounted on a minimum pad of 2 oz. copper. The power dissipation
°
PDSM is based on RθJA and the maximum allowed junction temperature of 150 C. The value in any given application
depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=150ꢀC. Ratings are based on low duty cycles to keep initial
TJ=25ꢀC.
N-Channel Electrical Characteristics (Tc=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
100
-
-
-
-
-
-
VGS=0V, ID=250μA
V
1
-
-
-
-
-
-
2.5
±20
1
10
175
230
-
VDS=VGS, ID=250μA
VGS=±16V, VDS=0V
VDS=80V, VGS=0V
VDS=80V, VGS=0V, Tj=70C
VGS=10V, ID=2A
μA
IDSS
127
156
3.7
*RDS(ON)
*GFS
m
VGS=4.5V, ID=2A
VDS=10V, ID=3A
S
MTB135C10N8J
CYStek Product Specification
Spec. No. : C009N8J
Issued Date : 2018.08.23
Revised Date :
CYStech Electronics Corp.
age No. : 3/13
Dynamic
Ciss
-
-
-
-
-
-
-
-
-
-
-
248
27
7
-
-
-
-
-
-
-
-
-
-
-
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
pF
ns
VDS=50V, VGS=0V, f=1MHz
4.8
16.4
15.8
13.8
5.2
1.1
0.8
10
Ω
VDS=50V, ID=1A, VGS=10V, RG=6
*Qg
*Qgs
*Qgd
Rg
nC
VDS=50V, ID=2A, VGS=10V
f=1MHz
Body Diode
*VSD
*trr
-
-
-
0.84
16.5
11.5
1.2
-
-
V
ns
nC
VGS=0V, IS=2A
IF=2A, VGS=0V, dIF/dt=100A/μs
*Qrr
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
P-Channel Electrical Characteristics (Tc=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
-100
-1.5
-
-
-
-
-
-
-
-
-
-
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0V
VDS=-80V, VGS=0V
VDS=-80V, VGS=0V, Tj=70C
VGS=-10V, ID=-1.5A
V
-2.5
±100
-1
-10
265
nA
μA
IDSS
189
*RDS(ON)
*GFS
m
-
-
225
4.5
340
-
VGS=-4.5V, ID=-0.75A
VDS=-10V, ID=-1A
S
Dynamic
Ciss
-
-
-
-
-
-
-
-
-
-
-
668
44
29
7.8
18.4
34.4
8.6
15.8
2
-
-
-
-
-
-
-
-
-
-
-
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
pF
ns
VDS=-50V, VGS=0V, f=1MHz
Ω
VDS=-50V, ID=-1A, VGS=-10V, RG=3
*Qg
*Qgs
*Qgd
Rg
nC
VDS=-50V, ID=-1.5A, VGS=-10V
f=1MHz
3.2
5.5
Body Diode
*VSD
*trr
-
-
-
-0.82
18
16
-1.2
-
-
V
ns
nC
VGS=0V, IS=-1A
IF=-1.5A, VGS=0V, dIF/dt=100A/μs
*Qrr
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTB135C10N8J
CYStek Product Specification
Spec. No. : C009N8J
Issued Date : 2018.08.23
Revised Date :
CYStech Electronics Corp.
age No. : 4/13
Recommended Soldering Footprint
unit : mm
MTB135C10N8J
CYStek Product Specification
Spec. No. : C009N8J
Issued Date : 2018.08.23
Revised Date :
CYStech Electronics Corp.
age No. : 5/13
Typical Characteristics : Q1( N-channel )
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
10
8
10V, 9V, 8V, 7V, 6V, 5V
4V
6
0.8
0.6
0.4
4
3.5V
ID=250μA,
2
VGS=0V
VGS=3V
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
ꢂꢃ, Jꢄꢅcꢆꢇꢈꢅ ꢂeꢉꢊeꢋaꢆꢄꢋeꢌꢀCꢍ
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
100
10
1.2
1
ꢂꢃ=ꢐꢑꢀC
VGS=4.5V
VGS=10V
0.8
0.6
0.4
0.2
ꢂꢃ=ꢒꢑꢓꢀC
0.01
0.1
1
10
0
2
4
6
8
10
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
500
450
400
350
300
250
200
150
100
50
VGS=10V, ID=2A
ID=2A
2
1.6
1.2
0.8
0.4
RDS(ON)@ꢂꢃ=ꢐꢑꢀC ꢕ ꢒꢐꢖꢉΩ ꢆyꢊꢗ
VGS=4.5V, ID=2A
RDS(ON)@ꢂꢃ=ꢐꢑꢀC ꢕ ꢒꢑꢘꢉΩ ꢆyꢊꢗ
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
ꢂꢃ, Jꢄꢅcꢆꢇꢈꢅ ꢂeꢉꢊeꢋaꢆꢄꢋeꢌꢀCꢍ
MTB135C10N8J
CYStek Product Specification
Spec. No. : C009N8J
Issued Date : 2018.08.23
Revised Date :
CYStech Electronics Corp.
age No. : 6/13
Typical Characteristics(Cont.) : Q1( N-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
1000
Ciss
1.2
ID=1mA
100
1
Coss
0.8
10
ID=250μA
0.6
Crss
0.4
1
-75 -50 -25
0
25 50 75 100 125 150 175
0
10
20
30
40
50
VDS, Drain-Source Voltage(V)
ꢂꢃ, Jꢄꢅcꢆꢇꢈꢅ ꢂeꢉꢊeꢋaꢆꢄꢋeꢌꢀCꢍ
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
1
10
VDS=50V
8
6
4
2
0
VDS=30V
VDS=80V
0.1
0.01
VDS=10V
Pulsed
ꢂa=ꢐꢑꢀC
ID=2A
5
0
1
2
3
4
6
0.001
0.01
0.1
ID, Drain Current(A)
1
10
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
2.5
2
100
10
RDS(ON)
Limited
1.5
1
100μs
1
1ms
10ms
0.1
0.01
TA=ꢐꢑꢀC, ꢙGS=10V
RθJA=ꢚꢓꢀCꢛꢜ
100m
0.5
0
TA=ꢐꢑꢀC, ꢂꢃ=ꢒꢑꢓꢀC, ꢙGS=10V
RθJA=ꢚꢓꢀCꢛꢜ,ꢔꢇꢅgꢝe Pꢄꢝꢏe
1s
DC
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
TJ, Jꢄꢅcꢆꢇꢈꢅ ꢂeꢉꢊeꢋaꢆꢄꢋeꢌꢀCꢍ
MTB135C10N8J
CYStek Product Specification
Spec. No. : C009N8J
Issued Date : 2018.08.23
Revised Date :
CYStech Electronics Corp.
age No. : 7/13
Typical Characteristics(Cont.) : Q1( N-channel)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
50
10
9
VDS=10V
TJ(MAX)=ꢒꢑꢓꢀC
TA=ꢐꢑꢀC
40
8
RθJA=ꢚꢓꢀCꢛꢜ
7
30
6
5
20
4
3
10
2
1
0
0
0.001
0.01
0.1
1
10
100
0
1
2
3
4
5
6
Pulse Width(s)
VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
1.RθJA(t)=r(t)*RθJA
0.1
0.1
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=90ꢀCꢛꢜ
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTB135C10N8J
CYStek Product Specification
Spec. No. : C009N8J
Issued Date : 2018.08.23
Revised Date :
CYStech Electronics Corp.
age No. : 8/13
Typical Characteristics : Q2( P-channel)
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
9
8
7
6
5
4
3
2
1
0
-10V
-9V
-8V
-7V
-6V
-5V
-3.5V
0.8
0.6
0.4
-3V
ID=-250μA,
VGS=0V
VGS=-2.5V
4
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
5
ꢂꢃ, Jꢄꢅcꢆꢇꢈꢅ ꢂeꢉꢊeꢋaꢆꢄꢋeꢌꢀCꢍ
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Source Drain Current vs Source-Drain Voltage
1000
100
10
1.2
1
VGS=0V
ꢂꢃ=ꢐꢑꢀC
VGS=-4.5V
VGS=-10V
0.8
0.6
0.4
0.2
ꢂꢃ=ꢒꢑꢓꢀC
0
2
2
4
6
8
10
0.01
0.1
1
10
-ID, Drain Current(A)
-IS, Source Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
VGS=-10V, ID=-1.5A
450
400
350
300
250
200
150
100
50
1.8
1.6
1.4
1.2
1
ID=-1.5A
RDS(ON)@ꢂꢃ=ꢐꢑꢀC ꢕ ꢒꢞꢚꢉΩ ꢆyꢊꢗ
0.8
0.6
0.4
VGS=-4.5V, ID=-0.75A
RDS(ON)@ꢂꢃ=ꢐꢑꢀC ꢕ ꢐꢐꢑꢉΩ ꢆyꢊꢗ
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
ꢂꢃ, Jꢄꢅcꢆꢇꢈꢅ ꢂeꢉꢊeꢋaꢆꢄꢋeꢌꢀCꢍ
MTB135C10N8J
CYStek Product Specification
Spec. No. : C009N8J
Issued Date : 2018.08.23
Revised Date :
CYStech Electronics Corp.
age No. : 9/13
Typical Characteristics(Cont.) : Q2(P-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
1000
Ciss
1.2
1
ID=-1mA
100
0.8
0.6
0.4
Coss
ID=-250μA
Crss
10
-75 -50 -25
0
25 50 75 100 125 150 175
0
10
20
30
40
50
-VDS, Drain-Source Voltage(V)
ꢂꢃ, Jꢄꢅcꢆꢇꢈꢅ ꢂeꢉꢊeꢋaꢆꢄꢋeꢌꢀCꢍ
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
10
VDS=-50V
8
6
4
2
0
1
VDS=-20V
VDS=-80V
0.1
VDS=-10V
Pulsed
TA=ꢐꢑꢀC
ID=-1.5A
0.01
0
2
4
6
Qg, Total Gate Charge(nC)
8
10 12 14 16 18 20
0.001
0.01
0.1
-ID, Drain Current(A)
1
10
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
2
100
10
1.8
1.6
1.4
1.2
1
RDS(ON)
Limited
100μs
1
1ms
0.8
0.6
0.4
0.2
0
10ms
100ms
0.1
0.01
TA=ꢐꢑꢀC, ꢙGS=-10V
RθJA=ꢚꢓꢀCꢛꢜ
TA=ꢐꢑꢀC, ꢂꢃ=ꢒꢑꢓꢀC, ꢙGS=-10V
RθJA=ꢚꢓꢀCꢛꢜ, ꢔꢇꢅgꢝe Pꢄꢝꢏe
1s
DC
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
-ID, Drain-Source Voltage(V)
Tj, Jꢄꢅcꢆꢇꢈꢅ ꢂeꢉꢊeꢋaꢆꢄꢋeꢌꢀCꢍ
MTB135C10N8J
CYStek Product Specification
Spec. No. : C009N8J
Issued Date : 2018.08.23
Revised Date :
CYStech Electronics Corp.
age No. : 10/13
Typical Characteristics(Cont.) : Q2(P-channel)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
50
9
VDS=-10V
8
TJ(MAX)=ꢒꢑꢓꢀC
TA=ꢐꢑꢀC
40
7
RθJA=ꢚꢓꢀCꢛꢜ
6
30
5
4
20
3
2
1
0
10
0
0.001
0.01
0.1 1
Pulse Width(s)
10
100
0
1
2
3
4
5
-VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
0.05
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=90°C/W
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTB135C10N8J
CYStek Product Specification
Spec. No. : C009N8J
Issued Date : 2018.08.23
Revised Date :
CYStech Electronics Corp.
age No. : 11/13
Reel Dimension
Carrier Tape Dimension
MTB135C10N8J
CYStek Product Specification
Spec. No. : C009N8J
Issued Date : 2018.08.23
Revised Date :
CYStech Electronics Corp.
age No. : 12/13
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
Soldering Time
5 +1/-1 seconds
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
temperature(tp)
Ramp down rate
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Time 25 C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB135C10N8J
CYStek Product Specification
Spec. No. : C009N8J
Issued Date : 2018.08.23
Revised Date :
CYStech Electronics Corp.
age No. : 13/13
2928-8J Dimension
Marking:
D1 D1 D2 D2
B1CH
Date
Code
S1 G1 S2 G2
8-Lead 2928-8J Plastic Package
CYStek Package Code: N8J
Millimeters
DIM
Inches
Millimeters
Inches
DIM
Min.
Max.
Min.
Max.
Min.
2.300
2.650
Max.
2.500
3.050
Min.
0.0906
0.1043
Max.
0.0984
0.1201
A
A1
A2
b
0.935
0.010
0.925
0.250
0.100
1.100
0.100
1.000
0.400
0.200
0.0368
0.0004
0.0364
0.0098
0.0433
0.0039
0.0394
0.0157
E1
E2
e
0.65 BSC
0.0256 BSC
L
0.300
0ꢀ
0.600
8ꢀ
0.0118
0ꢀ
0.0236
8ꢀ
c
θ
0.0039
0.1161
0.0984
0.0079
0.1220
0.1181
7ꢀ TYP
7ꢀ TYP
D
E
2.950
2.500
3.100
3.000
θ1
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB135C10N8J
CYStek Product Specification
相关型号：
MTB14
Board Connector, 14 Contact(s), 1 Row(s), 0.156 inch Pitch, Polarized Lck, Natural Insulator, Plug
ADAM-TECH
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