CMPA2735075F [CREE]
Narrow Band High Power Amplifier, 2700MHz Min, 3500MHz Max, 0.500 X 0.500 INCH, 780019, 6 PIN;
| 型号： | CMPA2735075F |
| 厂家： | 
CREE, INC |
| 描述： | Narrow Band High Power Amplifier, 2700MHz Min, 3500MHz Max, 0.500 X 0.500 INCH, 780019, 6 PIN 高功率电源 射频 微波 |
| 文件： | 总9页 (文件大小：1771K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMPA2735075F
75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA2735075F is a gallium nitride (GaN) High Electron Mobili
Transistor (HEMT) based monolithic microwave integrated circu
(MMIC). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated electro
drift velocity and higher thermal conductivity. GaN HEMTs also offe
greater power density and wider bandwidths compared to Si and GaA
transistors. This MMIC contains a two-stage reactively matched amplifier
design approach enabling very wide bandwidths to be achieved. This
MMIC enables extremely wide bandwidths to be achieved in a small
footprint screw-down package.
Typical Performance Over 2.7-3.5 GHz (TC = 25˚C)
Parameter
2.7 GHz
2.9 GHz
3.1 GHz
3.3 GHz
3.5 GHz
Units
dB
Small Signal Gain
Saturated Output Power, PSAT
27
59
21
43
29
76
23
54
29
89
24
56
28
90
24
56
27
83
23
56
1
W
1
Power Gain @ PSAT
dB
1
PAE @ PSAT
%
Note1: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-8 mA.
Features
Applications
• 27 dB Small Signal Gain
• Civil and Military Pulsed Radar
Amplifiers
• 80 W Typical PSAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• 0.5” x 0.5” Total Product Size
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
VDSS
VGS
TSTG
TJ
Rating
84
Units
VDC
VDC
˚C
Conditions
25°C
Drain-source Voltage
Gate-source Voltage
-10, +2
-65, +150
225
25°C
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Screw Torque
˚C
IG
28
mA
25°C
T
40
in-oz
˚C/W
Thermal Resistance, Junction to Case (packaged)1
RθJC
2.5
300 μsec, 20%, 85°C
Notes:
1
Measured for the CMPA2735075F at PDISS = 64 W.
Electrical Characteristics (Frequency = 2.9 GHz to 3.5 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics
Gate Threshold Voltage
VGS(TH)
-3.8
-3.0
-2.3
V
VDS = 10 V, ID = 28 mA
Gate Quiescent Voltage
VGS(Q)
IDS
–
-2.7
27.4
100
–
–
–
VDC
A
VDD = 28 V, IDQ = 700 mA, Freq = 2.9 GHz
VDS = 6.0 V, VGS = 2.0 V
Saturated Drain Current1
Drain-Source Breakdown Voltage
RF Characteristics2,3
19.6
84
VBD
V
VGS = -8 V, ID = 28 mA
Small Signal Gain1
Small Signal Gain2
Small Signal Gain3
S21
S21
S21
–
29
29
27
–
–
–
dB
dB
dB
VDD = 28 V, IDQ = 700 mA, Freq = 2.9 GHz
VDD = 28 V, IDQ = 700 mA, Freq = 3.1 GHz
VDD = 28 V, IDQ = 700 mA, Freq = 3.5 GHz
26.5
26
VDD = 28 V, IDQ = 700 mA, PIN = 28 dBm,
Freq = 2.9 GHz
Power Output1
Power Output2
Power Output3
POUT
POUT
POUT
–
76
82
85
–
–
–
W
W
W
VDD = 28 V, IDQ = 700 mA, PIN = 28 dBm,
Freq = 3.1 GHz
66
66
VDD = 28 V, IDQ = 700 mA, PIN = 28 dBm,
Freq = 3.5 GHz
Power Added Efficiency1
Power Added Efficiency2
Power Added Efficiency3
Power Gain1
PAE
PAE
PAE
GP
–
45
45
–
54
54
–
–
%
%
VDD = 28 V, IDQ = 700 mA, Freq = 2.9 GHz
VDD = 28 V, IDQ = 700 mA, Freq = 3.1 GHz
VDD = 28 V, IDQ = 700 mA, Freq = 3.5 GHz
VDD = 28 V, IDQ = 700 mA, Freq = 2.9 GHz
VDD = 28 V, IDQ = 700 mA, Freq = 3.1 GHz
VDD = 28 V, IDQ = 700 mA, Freq = 3.5 GHz
VDD = 28 V, IDQ = 700 mA, Freq = 3.1 GHz
VDD = 28 V, IDQ = 700 mA, Freq = 3.5 GHz
VDD = 28 V, IDQ = 700 mA, Freq = 3.1 GHz
VDD = 28 V, IDQ = 700 mA, Freq = 3.5 GHz
53
–
%
23
–
dB
dB
dB
dB
dB
dB
dB
Power Gain2
GP
20
20
–
21
–
Power Gain3
GP
21
–
Input Return Loss1
Input Return Loss2
Output Return Loss1
Output Return Loss2
S11
S11
S22
S22
-11
-16
-9
-8
-10
–4
–10
–
–
–
-17
No damage at all phase angles,
VDD = 28V, IDQ = 700mA, POUT = 75W CW
Y
Output Mismatch Stress
Notes:
VSWR
–
–
5 : 1
1
Scaled from PCM data.
All data pulse tested in CMPA2735075F-TB.
2
3
Pulse Width = 300 μS, Duty Cycle = 20%.
Cree, Inc.
Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
2
CMPA2735075F Rev 1.2
Typical Performance of the CMPA2735075F
Gain and Input Return Loss vs Frequency of the CMPA2735075F
Measured in CMPA2735075F-TB Amplifier Circuit.
VDS = 28 V, IDS = 700 mA
40
35
30
25
20
15
10
5
10
5
Gain (dB)
0
-5
-10
-15
-20
-25
-30
IRL (dB)
S21 (dB)
S11 (dB)
0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
4.2
4.4
Frequency (GHz)
Output Power, Gain and PAE vs Frequency of the CMPA2735075F
Measured in CMPA2735075F-TB Amplifier Circuit.
VDS = 28 V, IDS = 700 mA, Pulse Width = 300 μS, Duty Cycle = 20%
51
50
49
48
47
46
45
44
43
42
41
100
90
80
70
60
50
40
30
20
10
0
Output Power (dBm)
PAE (%)
Gain (dB)
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
Frequency (GHz)
Cree, Inc.
Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
3
CMPA2735075F Rev 1.2
Typical Pulse Droop Performance
Pulse Width
10 us
Duty Cycle (%)
Droop (dB)
0.30
5-25
5-25
5-25
5-25
5-25
5-25
50 us
0.30
100 us
300 us
1 ms
0.30
0.35
0.40
5 ms
0.55
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
4
CMPA2735075F Rev 1.2
CMPA2735075F-TB Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
C1
C2
R1
R2
L1
CAP, 15000pF, 100V, 0805, X7R
1
1
1
1
1
2
1
1
1
1
CAP, 1000uF, 20%, 50V, ELECT, MVY, SMD
RES, 1/8W, 1206, +/-5%, 0 OHMS
RES, 1/16W, 0603, +/-5%, 10K OHMS
FERRITE, 22 OHM, 0805, BLM21PG220SN1
CONNECTOR, N-TYPE, FEMALE, W/0.500 SMA FLNG
CONNECTOR, HEADER, RT>PLZ .1CEN LK 9POS
CONNECTOR, SMB, STRAIGHT JACK, SMD
PCB, TACONIC, RF-35-0100-CH/CH
CMPA2735075F
J1,J2
J3
J4
-
Q1
Notes
1 The CMPA2735075F is connected to the PCB with 2.0 mil Au bond wires.
CMPA2735075F-TB Demonstration Amplifier Circuit
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
5
CMPA2735075F Rev 1.2
CMPA2735075F-TB Demonstration Amplifier Circuit Schematic
CMPA2735075F-TB Demonstration Amplifier Circuit Outline
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
6
CMPA2735075F Rev 1.2
Product Dimensions CMPA2735075F (Package Type — 780019)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
7
CMPA2735075F Rev 1.2
Part Number System
CMPA2735075F
Package
Power Output (W)
Upper Frequency (GHz)
Lower Frequency (GHz)
Cree MMIC Power Amplifier Product Line
Parameter
Value
Units
Lower Frequency
Upper Frequency
Power Output
Package
2.7
3.5
GHz
GHz
W
75
Flange
-
Table 1.
Note: Alpha characters used in frequency
code indicate a value greater than 9.9 GHz.
See Table 2 for value.
Character Code
Code Value
A
B
C
D
E
F
0
1
2
3
4
5
6
7
8
9
G
H
J
K
1A = 10.0 GHz
2H = 27.0 GHz
Examples:
Table 2.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
8
CMPA2735075F Rev 1.2
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use. No license is granted by implication or otherwise under
any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities
and are provided for information purposes only. These values can and do vary in different applications, and actual
performance can vary over time. All operating parameters should be validated by customer’s technical experts for each
application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could
result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a
nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/wireless
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
9
CMPA2735075F Rev 1.2
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