CMPA5259050D [CREE]
RF/Microwave Amplifier,;
| 型号： | CMPA5259050D |
| 厂家： | 
CREE, INC |
| 描述： | RF/Microwave Amplifier, |
| 文件： | 总9页 (文件大小：659K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMPA5259050D
50 W, 5.2 - 5.9 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA5259050D is a gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) based monolithic microwave integrated
circuit (MMIC). GaN has superior properties compared to silicon
or gallium arsenide, including higher breakdown voltage, higher
saturated electron drift velocity and higher thermal conductivity.
GaN HEMTs also offer greater power density and wider bandwidths
compared to Si and GaAs transistors. This MMIC contains a
two-stage reactively matched amplifier design approach enabling very wide
bandwidths to be achieved.
Typical Performance Over 5.2 - 5.9 GHz (TC = 70˚C)
Parameter1
5.2 GHz
5.5 GHz
5.9 GHz
Units
Small Signal Gain
33
33
32
dB
POUT @ PIN = 23 dBm
47
24
51
45
24
51
41
23
49
W
dB
%
Power Gain @ PIN = 23 dBm
PAE @ PIN = 23 dBm
Notes:
1
Pulse Width = 500 μs, Duty Cycle = 20%, Mounted to 40 mil CPC carrier.
Features
Applications
• 31 dB Small Signal Gain
• Military C Band Radar
• 50 W Typical PSAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.133 x 0.133 x 0.004 inches
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
VDSS
VGS
Rating
84
Units
VDC
Conditions
25˚C
Drain-source Voltage
Gate-source Voltage
Storage Temperature
Operating Junction Temperature
-10, +2
-55, +150
225
VDC
25˚C
TSTG
˚C
TJ
˚C
Pulse Width = 500 µs, Duty
Cycle = 20%, PDISS = 61 W
Thermal Resistance, Junction to Case (packaged)1
RθJC
1.60
˚C/W
Thermal Resistance, Junction to Case (packaged)1
Mounting Temperature (30 seconds)
RθJC
TS
2.34
320
˚C/W
˚C
CW, 85˚C, PDISS = 58 W
PDISS = 77 W
Note1 Eutectic die attach using 80/20 AuSn solder mounted to a 40 mil thick CPC carrier.
Electrical Characteristics (Frequency = 5.2 GHz to 5.9 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current1
VGS(TH)
VGS(Q)
IDS
-3.6
–
-3.0
-2.7
16.8
100
-2.4
–
V
V
A
V
VDS = 10 V, ID = 16.8 mA
VDD = 28 V, IDQ = 1000 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 16.8 mA
12.1
84
–
Drain-Source Breakdown Voltage
RF Characteristics2
VBD
–
Small Signal Gain1
S211
S212
S213
S11
S22
POUT1
POUT2
POUT3
PAE1
PAE2
PAE3
GP
30.4
30.7
30.8
–
33
33
34
-10
-10
60
57
52
60
60
59
25
–
–
–
–
–
–
–
–
–
–
–
–
dB
dB
dB
dB
dB
W
VDD = 28 V, IDQ = 1000 mA, Freq = 5.2 GHz
Small Signal Gain2
Small Signal Gain3
Input Return Loss
Output Return Loss
Power Output1
VDD = 28 V, IDQ = 1000 mA, Freq = 5.5 GHz
VDD = 28 V, IDQ = 1000 mA, Freq = 5.9 GHz
VDD = 28 V, IDQ = 1000 mA
–
VDD = 28 V, IDQ = 1000 mA
58.2
55.2
50.0
54.5
54.7
53.7
-
VDD = 28 V, IDQ = 1000 mA, PIN = 23 dBm, Freq = 5.2 GHz
VDD = 28 V, IDQ = 1000 mA, PIN = 23 dBm, Freq = 5.5 GHz
VDD = 28 V, IDQ = 1000 mA, PIN = 23 dBm, Freq = 5.9 GHz
VDD = 28 V, IDQ = 1000 mA, PIN = 23 dBm, Freq = 5.2 GHz
VDD = 28 V, IDQ = 1000 mA, PIN = 23 dBm, Freq = 5.5 GHz
VDD = 28 V, IDQ = 1000 mA, PIN = 23 dBm, Freq = 5.9 GHz
VDD = 28 V, IDQ = 1000 mA, PIN = 23 dBm, Freq = 5.2 GHz
Power Output2
W
Power Output3
W
Power Added Efficiency1
Power Added Efficiency2
Power Added Efficiency3
Power Gain
%
%
%
dB
No damage at all phase angles,
VDD = 28 V, IDQ = 1000 mA, POUT = 50 W CW
Y
Output Mismatch Stress
VSWR
–
3 : 1
–
Notes:
1
Scaled from PCM data.
All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 1%.
2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2017-2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
2
CMPA5259050D Rev 2.0
Die Dimensions (units in microns)
Overall die size 3380 x 3380 (+0/-50) microns, die thickness 100 (+/-10) micron.
All Gate and Drain pads must be wire bonded for electrical connection.
Pad Number
Function
RF-IN
Description
RF-Input pad. Matched to 50 ohm.
Gate control for stage 1. VG ~ 2.0 - 3.5 V.
Gate control for stage 1. VG ~ 2.0 - 3.5 V.
Drain supply for stage 1. VD = 28 V.
Drain supply for stage 1. VD = 28 V.
Gate control for stage 2A. VG ~ 2.0 - 3.5 V.
Gate control for stage 2A. VG ~ 2.0 - 3.5 V.
Drain supply for stage 2A. VD = 28 V.
Drain supply for stage 2B. VD = 28 V.
RF-Output pad. Matched to 50 ohm.
Ground pad.
Pad Size (microns)
140 x 250
140 x 140
140 x 140
140 x 140
140 x 140
140 x 140
140 x 140
–
Note
4
1
2
VG1_U
VG1_L
VD1_U
VD1_L
VG2_U
VG2_L
VD2_U
VD2_L
RF-Out
GND
1,2
1,2
1
3
4
5
1
6
1,3
1,3
1
7
8
9
–
1
10
–
110 x 250
90 x 90
4
–
Notes:
1
Attach bypass capacitor to pads 2-9 per application circuit.
2
3
4
VG1_U and VG1_L are connected internally so it would be enough to connect either one for proper operation.
VG2_U and VG2_L are connected internally so it would be enough to connect either one for proper operation.
The RF Input and Output pad have a ground-signal-ground with a nominal pitch of 10 mm (250 um). The RF
ground pads are 90 x 90 microns.
Die Assembly Notes:
• Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure
application note at http://www.cree.com/RF/Document-Library
• Vacuum collet is the preferred method of pick-up.
• The backside of the die is the Source (ground) contact.
• Die back side gold plating is 5 microns thick minimum.
• Thermosonic ball or wedge bonding are the preferred connection methods.
• Gold wire must be used for connections.
• Use the die label (XX-YY) for correct orientation.
Cree, Inc.
Copyright © 2017-2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
3
CMPA5259050D Rev 2.0
Block Diagram Showing Additional Capacitors for Operation Over 5.2 to 5.9 GHz
Designator
Description
Quantity
CAP, 51pF, +/-10%, SINGLE LAYER, 0.035”, Er 3300, 100 V, Ni/
Au TERMINATION
C1,C2,C3,C4,C5,C6,C7,C8
8
CAP, 680pF, +/-10%, SINGLE LAYER, 0.070”, Er 3300, 100 V,
Ni/Au TERMINATION
C9,C10,C11,C12
C13
4
1
CAP, 3.9pF, ATC600S, +/– 0.1pF
Notes:
1
The input, output and decoupling capacitors should be attached as close as possible to the
die - typical distance is 5 to 10 mm with a maximum of 15 mm.
2
The MMIC die and capacitors should be connected with 2 mm gold bond wires.
3
Input cap C13 is an optional addition to improve the input return loss.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2017-2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
4
CMPA5259050D Rev 2.0
CMPA5259050D Typical Performance
Figure 1. Gain and Return Losses vs. Frequency of the CMPA5259050D
VDD = 28 V, IDQ = 1.0 A, Tb = 25°C
40
30
20
10
0
40
20
0
S21
S11
S22
-20
-40
4.0
4.5
5.0
5.5
6.0
6.5
7.0
Frequency (GHz)
Figure 2. Output Power & Power Added Efficiency vs. Frequency
of the CMPA5259050D
VDD = 28 V, IDQ = 1.0 A, PIN = 23 dBm, Pulse Width 500 μs,
Duty Cycle = 20%, Tb = 70°C
47.0
46.5
46.0
45.5
45.0
44.5
44.0
43.5
43.0
70
65
60
55
50
45
40
35
30
Pout
PAE
4.8
5.0
5.2
5.4
5.6
5.8
6.0
6.2
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
rfsales@cree.com
www.cree.com/rf
5
CMPA259050D Rev 1.3
CMPA5259050D Typical Performance
Figure 3. Gain vs. Frequency of the CMPA5259050D
VDD = 28 V, IDQ = 1.0 A, PIN = 23 dBm, Pulse Width 500 μs,
Duty Cycle = 20%, Tb = 70°C
26.0
25.5
25.0
24.5
24.0
23.5
23.0
Gain
22.5
22.0
4.8
5.0
5.2
5.4
5.6
5.8
6.0
6.2
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
rfsales@cree.com
www.cree.com/rf
6
CMPA259050D Rev 1.3
Part Number System
CMPA5259050D
Package
Power Output (W)
Upper Frequency (GHz)
Lower Frequency (GHz)
Cree MMIC Power Amplifier Product Line
Parameter
Value
Units
Lower Frequency
Upper Frequency1
Power Output
Package
5.2
5.9
GHz
GHz
W
50
Bare Die
-
Table 1.
Note1: Alpha characters used in frequency
code indicate a value greater than 9.9 GHz.
See Table 2 for value.
Character Code
Code Value
A
B
C
D
E
F
0
1
2
3
4
5
6
7
8
9
G
H
J
K
1A = 10.0 GHz
2H = 27.0 GHz
Examples:
Table 2.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2017-2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
7
CMPA5259050D Rev 2.0
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CMPA5259050D
GaN MMIC Bare Die
Each
Cree, Inc.
Copyright © 2017-2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
8
CMPA5259050D Rev 2.0
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use. No license is granted by implication or otherwise under
any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities
and are provided for information purposes only. These values can and do vary in different applications, and actual
performance can vary over time. All operating parameters should be validated by customer’s technical experts for each
application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could
result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a
nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
rfsales@cree.com
www.cree.com/RF
Cree, Inc.
Copyright © 2017-2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
9
CMPA5259050D Rev 2.0
相关型号：
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Wide Band High Power Amplifier, 5500MHz Min, 8500MHz Max, 0.188 X 0.142 INCH, 0.004 INCH HEIGHT, DIE-10
CREE
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