CMPA5585025F-AMP [CREE]
25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier;
| 型号： | CMPA5585025F-AMP |
| 厂家： | 
CREE, INC |
| 描述： | 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier |
| 文件： | 总19页 (文件大小：2076K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMPA5585025F
25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA5585025F is a gallium nitride (GaN) High Electron Mobil
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC
GaN has superior properties compared to silicon or gallium arsenid
including higher breakdown voltage, higher saturated electron drift velocit
and higher thermal conductivity. GaN HEMTs also offer greater powe
density and wider bandwidths compared to Si and GaAs transistors. This
MMIC is available in a 10 lead metal/ceramic flanged package for optimal
electrical and thermal performance.
Typical Performance Over 5.8-8.4 GHz (TC = 25˚C)
Parameter
5.8 GHz
29.5
15
6.4 GHz
24.0
23
7.2 GHz
24.0
20
7.9 GHz
24.0
19
8.4 GHz
22.0
19
Units
dB
W
Small Signal Gain
Output Power1
Power Gain1
21.7
19.5
17.2
18.5
18.6
dB
Power Added Efficiency1
30
25
20.5
19
19.5
%
Note1: Measured at -30 dBc, 1.6 MHz from carrier, in the CMPA5585025F-AMP under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2.
Features
Applications
•
•
•
•
25 dB Small Signal Gain
•
•
•
Point to Point Radio
35 W Typical PSAT
Communications
Operation up to 28 V
High Breakdown Voltage
Satellite Communication Uplink
•
•
High Temperature Operation
Size 1.00 x 0.385 inches
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
VDSS
Rating
84
Units
VDC
VDC
W
Conditions
25˚C
Drain-source Voltage
Gate-source Voltage
Power Dissipation
VGS
-10, +2
55
25˚C
PDISS
TSTG
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature1
Screw Torque
-65, +150
225
˚C
T
˚C
J
IGMAX
TS
10
mA
˚C
25˚C
245
40
in-oz
τ
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Case Operating Temperature
RθJC
RθJC
TC
1.55
1.80
˚C/W
˚C/W
˚C
OQPSK, 85˚C, PDISS = 55 W
CW, 85˚C, PDISS = 77 W
PDISS = 55 W
-40, +140
-40, +85
Case Operating Temperature
TC
˚C
PDISS = 77 W
Note:
1 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
Electrical Characteristics (Frequency = 5.5 GHz to 8.5 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current2
VGS(TH)
VGS(Q)
IDS
-3.8
–
-3.0
-2.7
12.8
100
-2.3
–
V
VDC
A
VDS = 10 V, ID = 13.2 mA
VDS = 28 V, ID = 285 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 13.2 mA
10.6
84
–
Drain-Source Breakdown Voltage
VBD
–
V
RF Characteristics3
V
DD = 28 V, IDQ = 285 mA,
IN = -20 dBm
Small Signal Gain
S21
18.25
24
–
dB
P
Input Return Loss
Output Return Loss
S11
S22
–
–
10
6
–
–
dB
dB
V
DD = 28 V, IDQ = 285 mA
DD = 28 V, IDQ = 285 mA
V
No damage at all phase angles, VDD
28 V, IDQ = 285 mA,
=
Y
Output Mismatch Stress
VSWR
–
–
5:1
P
OUT = 25W OQPSK
Notes:
1 Measured on-wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in the CMPA5585025F-AMP
Cree, Inc.
4600 Silicon Drive
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
2
CMPA5585025F Rev 4.1
Electrical Characteristics Continued... (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
RF Characteristics1,2,3,4
VDD = 28 V, IDQ = 285 mA,
Frequency = 5.8 GHz
Power Added Efficiency
Power Added Efficiency
Power Added Efficiency
Power Added Efficiency
Power Gain
PAE1
PAE2
PAE3
PAE4
GP1
24.5
16.5
15.5
15.0
19.5
16.25
16.55
16.75
–
30.0
20.5
19.0
19.5
21.7
17.2
18.5
18.6
-36
–
–
%
%
V
DD = 28 V, IDQ = 285 mA,
Frequency = 7.2 GHz
DD = 28 V, IDQ = 285 mA,
Frequency = 7.9 GHz
DD = 28 V, IDQ = 285 mA,
V
–
%
V
–
%
Frequency = 8.4 GHz
VDD = 28 V, IDQ = 285 mA,
Frequency = 5.8 GHz
–
dB
dB
dB
dB
dB
dB
dB
dB
VDD = 28 V, IDQ = 285 mA,
Frequency = 7.2 GHz
Power Gain
GP2
–
VDD = 28 V, IDQ = 285 mA,
Frequency = 7.9 GHz
Power Gain
GP3
–
VDD = 28 V, IDQ = 285 mA,
Frequency = 8.4 GHz
Power Gain
GP4
–
V
DD = 28 V, IDQ = 285 mA,
Frequency = 5.8 GHz
DD = 28 V, IDQ = 285 mA,
Frequency = 7.2 GHz
DD = 28 V, IDQ = 285 mA,
Frequency = 7.9 GHz
DD = 28 V, IDQ = 285 mA,
OQPSK Linearity
OQPSK Linearity
OQPSK Linearity
ACLR1
ACLR2
ACLR3
ACLR4
–27.0
–28.5
–26.0
–32.5
V
–
-36
V
–
-36
V
OQPSK Linearity
–
-42
Frequency = 8.4 GHz
Notes:
1 Measured in the CMPA5585025F-AMP
2 Under OQPSK modulated signal, 1.6 Msps, PN23, Alpha Filter = 0.2.
3 Measured at PAVE = 40 dBm.
4 Fixture loss de-embedded.
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Human Body Model
Charge Device Model
1A (> 250 V)
II (200 < 500 V)
CDM
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
3
CMPA5585025F Rev 4.1
Typical Performance of the CMPA5585025F
Figure 1. CMPA5585025F Linear Output Power, Gain and PAE at -30 dBc, 1.6 MHz from carrier
VDD = 28 V, IDQ = 285 mA, 1.6 Msps OQPSK Modulation
40
35
30
25
20
15
10
5
X Band
C Band
Extended C Band
Output Power
Gain
PAE
0
5.7
5.9
6.1
6.3
6.5
6.7
6.9
7.1
7.3
7.5
7.7
7.9
8.1
8.3
8.5
Frequency (GHz)
Figure 2. Typical Small Signal Gain and Return Loss vs Frequency
of the CMPA5585025F measured in CMPA5585025F-AMP Amplifier Circuit.
VDS = 28 V, IDS = 285 mA
40
30
20
10
|S21| (dB)
|S11| (dB)
|S22| (dB)
0
-10
-20
-30
-40
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
4
CMPA5585025F Rev 4.1
Typical Performance of the CMPA5585025F
Figure 3. CMPA5585025F C-band Spectral Mask at 15 W
PAE = 29.1% at 5.8 GHz, 28.5% at 6.4 GHz & 25.6% at 7.2 GHz
50
40
30
20
10
0
5.8 GHz
6.4 GHz
7.2 GHz
-10
-20
-30
-40
-6
-4
-2
0
2
4
6
Frequency (MHz)
Figure 4. CMPA5585025F X-band Spectral Mask at 15 W
PAE = 25.6% at 7.9 GHz & 25.3% at 8.4 GHz
50
40
30
20
10
0
7.9 GHz
8.4 GHz
-10
-20
-30
-40
-6
-4
-2
0
2
4
6
Frequency (MHz)
Cree, Inc.
4600 Silicon Drive
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5
CMPA5585025F Rev 4.1
Typical Performance of the CMPA5585025F
Figure 5. CMPA5585025F C-band Linearity, Gain, and PAE vs Average Output Power
VDS = 28 V, IDS = 285 mA, OQPSK, 1.6 Msps
-10
-15
-20
-25
-30
-35
-40
-45
-50
40
35
30
25
20
15
10
5
5.8 GHz Offset -
5.8 GHz Offset +
6.4 GHz Offset +
7.2 GHz Offset +
5.8 GHz PAE
6.4 GHz PAE
7.2 GHz PAE
6.4 GHz Offset -
7.2 GHz Offset -
5.8 GHz Gain
6.4 GHz Gain
7.2 GHz Gain
0
29
31
33
35
37
39
41
43
45
Average Output Power (dBm)
Figure 6. CMPA5585025F X-band Linearity, Gain, and PAE vs Average Output Power
VDS = 28 V, IDS = 285 mA, OQPSK, 1.6 Msps
-10
-15
-20
-25
-30
-35
-40
-45
-50
40
35
30
25
20
15
10
5
7.9 GHz Offset -
7.9 GHz Gain
7.9 GHz Offset +
7.9 GHz PAE
8.4 GHz Offset -
8.4 GHz Gain
8.4 GHz Offset +
8.4 GHz PAE
0
20
25
30
35
40
45
Average Output Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
6
CMPA5585025F Rev 4.1
Typical Performance of the CMPA5585025F
Figure 7. CMPA5585025F EVM vs Average Output Power
VDS = 28 V, IDS = 285 mA, 1.6 Msps OQPSK Modulation
10
5.8 GHz
9
6.4 GHz
7.2 GHz
7.9 GHz
8.4 GHz
8
7
6
5
4
3
2
1
0
21
23
25
27
29
31
33
35
37
39
41
43
45
Average Output Power (dBm)
Figure 8. CMPA5585025F - Linearity vs Average Output Power
OQPSK, 1.6 Msps, IDS = 285 mA
-10
5.8 GHz
-15
6.4 GHz
7.2 GHz
-20
-25
-30
-35
-40
-45
-50
7.9 GHz
8.4 GHz
20
22
24
26
28
30
32
34
36
38
40
42
44
46
Average Output Power (dBm)
Figure 9. CMPA5585025F Linearity vs Average Output Power
VDS = 28 V, IDS = 285 mA, IM3 5 MHz spacing
-10
5.8 GHz
6.4 GHz
-15
7.2 GHz
7.9 GHz
-20
8.4 GHz
-25
-30
-35
-40
-45
-50
20
22
24
26
28
30
32
34
36
38
40
42
44
46
Average Output Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
7
CMPA5585025F Rev 4.1
Typical Performance of the CMPA5585025F
Figure 10. CMPA5585025F - C-band Output Power, Gain and PAE vs Input Power
VDS = 28 V, IDS = 1.2 A, CW
Figure 11. CMPA5585025F - X-band Output Power, Gain and PAE vs Input Power
VDS = 28 V, IDS = 1.2 A, CW
Figure 12. CMPA5585025F - Power, Gain and PAE vs Frequency
VDS = 28 V, IDS = 1.2 A, CW
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
8
CMPA5585025F Rev 4.1
Typical Performance of the CMPA5585025F
Figure 13. CMPA5585025F - Typical Drain Current vs Average Output Power
VDS = 28 V, IDS = 285 mA, OQPSK, 1.6 Msps
3.5
3.0
2.5
2.0
1.0
0.5
0.0
5.8 GHz
6.4 GHz
7.2 GHz
7.9 GHz
8.4 GHz
20
25
30
35
40
45
Average Output Power (dBm)
Figure 14. CMPA5585025F - Intermodulation Distortion Products vs Tone Spacing
VDS = 28 V, IDS = 285 mA, Center Freq = 7.9 GHz
-10
-15
IM3-
IM5-
IM7-
IM3+
IM5+
IM7+
-20
-25
-30
-35
-40
-45
-50
0.1
1
10
100
Two-Tone Spacing (MHz)
Note: Divergence in IM5 and IM7 at tone spacings greater than 20 MHz is due to the
bias components on the test fixture.
Cree, Inc.
4600 Silicon Drive
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
9
CMPA5585025F Rev 4.1
Typical Performance of the CMPA5585025F
Figure 15. CMPA5585025F - AM-AM
VDS = 28 V, IDS = 285 mA
Figure 16. CMPA5585025F -Normalized AM-PM
VDS = 28 V, IDS = 285 mA
25
5.8 GHz
7.2 GHz
7.9 GHz
8.4 GHz
20
15
10
5
0
-5
-10
10
12
14
16
18
20
22
24
26
28
30
32
34
Input Power (dBm)
Cree, Inc.
4600 Silicon Drive
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
10
CMPA5585025F Rev 4.1
Typical Performance of the CMPA5585025F
Figure 17. CMPA5585025F EVM vs Average Output Power
VDS = 28 V, IDS = 285 mA, 256 QAM
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6.4 EVM (%)
7.9 EVM (%)
8.4 EVM (%)
7.2 EVM (%)
20
25
30
35
40
45
Output Power (dBm)
Figure 18. CMPA5585025F Linearity vs Average Output Power
VDS = 28 V, IDS = 285 mA, IM3, IM5, IM7, 5 MHz spacing
0
-10
-20
-30
-40
-50
-60
IM3 7900
IM5 7900
IM7 7900
20
25
30
35
40
45
Output Power (dBm)
Cree, Inc.
4600 Silicon Drive
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
11
CMPA5585025F Rev 4.1
CMPA5585025F Power Dissipation De-rating Curve
Note 1
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
12
CMPA5585025F Rev 4.1
CMPA5585025F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
C1, C3, C7, C8, C10, C13
C2, C4, C5, C6, C9, C12
C11, C14
CAP, 1.0 uF, +/-10%, 1210, 100V, X7R
CAP, 33000 pF, 0805, 100V, X7R
CAP ELECT 3.3UF 80V FK SMD
RES 0.0 OHM 1/16W 0402 SMD
6
6
2
2
R1, R2
CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE,
BLUNT POST, 20MIL
J1,J2
2
J3
-
CONNECTOR, HEADER, RT>PLZ .1CEN LK 9POS
PCB, TACONIC, RF-35P-0200-CL1/CL1
CMPA5585025F
1
1
1
Q1
CMPA5585025F-AMP Demonstration Amplifier Circuit
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
13
CMPA5585025F Rev 4.1
CMPA5585025F-AMP Demonstration Amplifier Circuit
CMPA5585025F-AMP Demonstration Amplifier Circuit Outline
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
14
CMPA5585025F Rev 4.1
CMPA5585025F-AMP Demonstration Amplifier Circuit
To configure the CMPA5585025F test fixture to enable independent VG1 / VG2 control of the device, a cut
must be made to the microstrip line just above the R1 resistor as shown. Pin 9 will then supply VG1 and Pin 8 will
supply VG2.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
15
CMPA5585025F Rev 4.1
Product Dimensions CMPA5585025F (Package Type — 440208)
Pin Number
Qty
1
2
Gate Bias for Stage 2
Gate Bias for Stage 2
RF In
3
4
Gate Bias for Stage 1
Gate Bias for Stage 1
Drain Bias
5
6
7
Drain Bias
8
RF Out
9
Drain Bias
10
11
Drain Bias
Source
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
16
CMPA5585025F Rev 4.1
Part Number System
CMPA5585025F
Package
Power Output (W)
Upper Frequency (GHz)
Lower Frequency (GHz)
Cree MMIC Power Amplifier Product Line
Parameter
Value
Units
Lower Frequency
Upper Frequency1
Power Output
Package
5.5
8.5
GHz
GHz
W
25
Flange
-
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
B
C
D
E
0
1
2
3
4
5
6
7
8
9
F
G
H
J
K
1A = 10.0 GHz
2H = 27.0 GHz
Examples:
Table 2.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
17
CMPA5585025F Rev 4.1
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CMPA5585025F
GaN MMIC
Each
CMPA5585025F-TB
Test board without GaN MMIC
Each
CMPA5585025F-AMP
Test board with GaN MMIC installed
Each
Cree, Inc.
4600 Silicon Drive
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
18
CMPA5585025F Rev 4.1
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes
no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the
average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in
different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical
experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal
injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE
logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
19
CMPA5585025F Rev 4.1
相关型号：
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